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Samsung semiconductor
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| Part No. |
K7K1636T2C K7K1618T2C K7K1618T2C-EI330 K7K1618T2C-FI330
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| OCR Text |
...3j,10j,11j,3k,10k,11k,2l,3l,11l 3m,10m,11m,2n,3n,11n,3p,10p,11p data inputs outputs r/w 4a read, write control pin, read active when high l...bits ddr common i/o synchronous pipelined burst srams. they are organized as 524,288 words by 36bi... |
| Description |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
1M X 18 DDR SRAM, 0.45 ns, PBGA165
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| File Size |
402.56K /
19 Page |
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Samsung semiconductor
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| Part No. |
K7I323682C K7I321882C
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| OCR Text |
...3j,10j,11j,3k,10k,11k,2l,3l,11l 3m,10m,11m,2n,3n,11n,3p,10p,11p data inputs outputs r/w 4a read, write control pin, read active when high l...bits ddr common i/o synchronous pipelined burst srams. they are organized as 1,048,576 words by 36... |
| Description |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
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| File Size |
413.81K /
18 Page |
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Samsung semiconductor
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| Part No. |
K7J323682C K7J321882C
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| OCR Text |
...,10d,9c,9b,3b,3c,2d,3f,2g,3j,3l,3m,2n 1c,1d,2e,1g,1j,2k,1m,1n,2p data inputs q0-35 11p,10m,11l,11k,10j,11f,11e,10c,11b,9p,9n,10l 9k,9g,10f,9...bits ddr separate i/o synchronous pipelined burst srams. they are orga- nized as 1,048,576 words by... |
| Description |
1Mx36 & 2Mx18 DDR II SIO b2 SRAM
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| File Size |
410.17K /
18 Page |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K7Q163664B-FC16 K7Q161864B-FC16
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| OCR Text |
...e,11d,11c,3b,3c,2d, 3f,2g,3j,3l,3m,2n data inputs q 0-17 11p,10m,11l,11k,10j,11f,11e,10c,11b,2b,3d,3e, 2f,3g,3k,2l,3n,3p data outputs w 4a w...bits qdr(quad data rate) synchronous pipelined burst srams. they are organized as 524,288 words by 3... |
| Description |
512Kx36 & 1Mx18 QDR TM b4 SRAM
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| File Size |
347.73K /
17 Page |
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SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
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| Part No. |
K7I643684M-EI25 K7I643684M-EI30 K7I641884M-CI30 K7I641884M-CI25 K7I641884M-CE30 K7I641884M-CE25 K7I641884M-FECI25 K7I641884M-FECI30 K7I641884M-FE30 K7I643684M-EC25 K7I641884M-FE25 K7I643684M-EC30 K7I643684M-FECI25 K7I643684M-FECI30 K7I643684M-FC30 K7I643684M-FC20 K7I641884M-FC20 K7I643684M-FC25 K7I643684M-FC16 K7I643684M-FCI16 K7I641884M-FC16 K7I641884M-FCI16 K7I643684M-FI20
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| OCR Text |
...3J,10J,11J,3K,10K,11K,2L,3L,11L 3M,10M,11M,2N,3N,11N,3P,10P,11P 4A 8A 7B,7A,5A,5B 2H,10H 11H 5F,7F,5G,7G,5H,7H,5J,7J,5K,7K 4E,8E,4F,8F,4G,8G...bits DDR Common I/O Synchronous Pipelined Burst SRAMs. They are organized as 2,097,152 words by 36bi... |
| Description |
72Mb DDRII SRAM Specification 72Mb SRAM的规范条DDRII
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| File Size |
416.16K /
18 Page |
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Motorola, Inc.
Motorola Mobility Holdings, Inc.
MOTOROLA INC
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| Part No. |
MCM69R736AZP5 MCM69R736AZP5R MCM69R736AZP8 MCM69R736AZP8R MCM69R736AZP6
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| OCR Text |
...3e, 5e, 3f, 5f, 3h, 5h, 3k, 5k, 3m, 5m, 3n, 5n, 3p, 5p, 3r v ss supply ground. 4a, 1b, 2b, 4b, 6b, 7b, 1c, 7c, 4g, 4h, 1r, 7r, 1t, 2t, 6t, 6...bits of the ram i/o bus. in all cases, the timing pa- rameters described for synchronous write input... |
| Description |
4M Late Write HSTL 128K X 36 LATE-WRITE SRAM, 4 ns, PBGA119
Circular Connector; No. of Contacts:22; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:36; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:36-1 RoHS Compliant: No
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| File Size |
229.07K /
20 Page |
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Samsung semiconductor
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| Part No. |
K7K1636U2C K7K1618U2C
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| OCR Text |
...3J,10J,11J,3K,10K,11K,2L,3L,11L 3M,10M,11M,2N,3N,11N,3P,10P,11P 4A 8A 7B,7A,5A,5B 2H,10H 11H 5F,7F,5G,7G,5H,7H,5J,7J,5K,7K 4E,8E,4F,8F,4G,8G...bits DDR Common I/O Synchronous Pipelined Burst SRAMs. They are organized as 524,288 words by 36bits... |
| Description |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
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| File Size |
415.85K /
19 Page |
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it Online |
Download Datasheet |
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飞思卡尔半导体(中国)有限公司
椋???″????浣?涓??)??????
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| Part No. |
MCM63R918FC4.0R MCM63R836FC3.3R MCM63R836FC4.0 MCM63R918FC3.7R MCM63R836FC4.0R MCM63R836FC3.0 MCM63R836FC3.0R MCM63R918FC3.3R MCM63R918FC3.0R MCM63R836FC3.7R
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| OCR Text |
...3E, 5E, 3F, 5F, 3H, 5H, 3K, 5K, 3M, 5M, 3N, 5N, 3P, 5P, 3R 4A, 1B, 2B, 4B, 7B, 1C, 7C, 4G, 4H, 1R, 7R, 1T, 2T, 6T, 6U Symbol CK CK DQx Type ...bits of the RAM I/O bus. In all cases, the timing parameters described for synchronous write input (... |
| Description |
MCM63R836 MCM63R836
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| File Size |
356.55K /
21 Page |
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Motorola, Inc
Motorola Mobility Holdings, Inc.
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| Part No. |
MCM69R819AZP8R MCM69R819AZP5 MCM69R819AZP6 MCM69R819AZP7 MCM69R737AZP5 MCM69R737AZP6 MCM69R737AZP7R MCM69R737AZP8 MCM69R737A
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| OCR Text |
...3e, 5e, 3f, 5f, 3h, 5h, 3k, 5k, 3m, 5m, 3n, 5n, 3p, 5p, 3r v ss supply ground. 4a, 1b, 2b, 4b, 6b, 7b, 1c, 7c, 4d, 4g, 4h, 3j, 5j, 1r, 7r, 1...bits of the ram i/o bus. in all cases, the timing pa- rameters described for synchronous write input... |
| Description |
MCM69R737A/D 4M Late Write LVTTL
ER 14C 12#16 2#4 SKT PLUG 256K X 18 LATE-WRITE SRAM, 2.5 ns, PBGA119
4M Late Write LVTTL 256K X 18 LATE-WRITE SRAM, 3 ns, PBGA119
4M Late Write LVTTL 256K X 18 LATE-WRITE SRAM, 3.5 ns, PBGA119
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| File Size |
217.09K /
20 Page |
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it Online |
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Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
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| Part No. |
K7I161882B-FC16 K7I161882B-FC20 K7I161882B-FC25 K7I161882B-FC30 K7I163682B-FC30 K7I163682B K7I163682B-FC16 K7I163682B-FC20 K7I163682B-FC25
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| OCR Text |
...3J,10J,11J,3K,10K,11K,2L,3L,11L 3M,10M,11M,2N,3N,11N,3P,10P,11P 4A 8A 7B,7A,5A,5B 2H,10H 11H 5F,7F,5G,7G,5H,7H,5J,7J,5K,7K 4E,8E,4F,8F,4G,8G...bits DDR Common I/O Synchronous Pipelined Burst SRAMs. They are organized as 524,288 words by 36bits... |
| Description |
512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM 512Kx36位，1Mx18位首席信息官b2DDRII的SRAM
GT 35C 35#16 PIN PLUG RTANG
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| File Size |
375.70K /
17 Page |
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it Online |
Download Datasheet |
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Price and Availability
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