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  38v Datasheet PDF File

For 38v Found Datasheets File :: 62078    Search Time::2.156ms    
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    IRF3717

IRF[International Rectifier]
Part No. IRF3717
OCR Text ... D D D ID 20A S S 1 2 3 4 8 7 Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage...8V 3.5V 3.3V 3.0V 2.8V 2.5V 1000 TOP VGS 10V 4.5V 3.8V 3.5V 3.3V 3.0V 2.8V 2.5V ID, Drain-to-...
Description HEXFETPower MOSFET

File Size 246.14K  /  10 Page

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    IRF5305L IRF5305S

IRF[International Rectifier]
Part No. IRF5305L IRF5305S
OCR Text ...0 seconds Max. -31 -22 -110 3.8 110 0.71 20 280 -16 11 -5.8 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C ...8V 16 C, C apacitanc e (pF ) 12 8 C rss 500 4 0 1 10 100 A 0 0 10 20 30 ...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A)
Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 167.31K  /  10 Page

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    IRF5305

IRF[International Rectifier]
Part No. IRF5305
OCR Text ...x. 1.4 --- 62 Units C/W 3/3/00 IRF5305 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ...8V 16 C, C apacitanc e (pF ) 12 8 C rss 500 4 0 1 10 100 A 0 0 10 20 30 ...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 120.44K  /  8 Page

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    IRF530N

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. IRF530N
OCR Text ...ed package. PINNING PIN 1 2 3 tab gate drain source drain DESCRIPTION SOT78 (TO220AB) tab drain 123 gate source drain LIMITING...8V 6V Normalised Current Derating, ID (%) 100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 Mou...
Description N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体
N-channel TrenchMOS TM transistor

File Size 95.87K  /  7 Page

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    IRF7811AV IRF7811AVTR

International Rectifier
Part No. IRF7811AV IRF7811AVTR
OCR Text ...pical PCB mount application. 3 6 4 5 SO-8 T o p V ie w DEVICE CHARACTERISTICS IRF7811AV RDS(on) QG Qsw Qoss 11m 17nC 6....8V 5 uH S c h o t tk y - 6 A VDD 450 125nS R e p e titi o n r a te :1 0 0 H z 50 u 16Vz500m...
Description Si, SMALL SIGNAL, FET, MS-012AA
N-Channel Application-Specific MOSFETs

File Size 85.36K  /  6 Page

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    IRF9150

Samsung semiconductor
International Rectifier
Intersil Corporation
Part No. IRF9150
OCR Text 3 -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanc...8V VGS = 7V 100s 10 OPERATION IN THIS AREA IS LIMITED BY rDS(ON) TC = 25oC TJ = MAX RATED SINGLE ...
Description -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET

File Size 56.86K  /  7 Page

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    IRF9520 FN2281

INTERSIL[Intersil Corporation]
Part No. IRF9520 FN2281
OCR Text 3 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified le...8V 1ms OPERATION IN THIS AREA IS LIMITED BY rDS(ON) -6 PULSE DURATION = 80s DUTY CYCLE = 0.5% ...
Description 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??)
From old datasheet system
6A 100V 0.600 Ohm P-Channel Power MOSFET
6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET

File Size 57.36K  /  7 Page

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    IRF9540 RF1S9540SM FN2282

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. IRF9540 RF1S9540SM FN2282
OCR Text .... ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....8V -20 VGS = -5V 0 0 -10 -20 VGS = -7V VGS = -6V -30 VGS = -4V -40 -50 1 VDS, DRAIN TO SOURCE ...
Description 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
19A/ 100V/ 0.200 Ohm/ P-Channel Power MOSFETs
From old datasheet system

File Size 59.17K  /  7 Page

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    IRF9620 FN2283

INTERSIL[Intersil Corporation]
Part No. IRF9620 FN2283
OCR Text 3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced pow...8V VGS = -9V VGS = -7V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) -4 PULSE DURATION = 8...
Description 3.5A/ 200V/ 1.500 Ohm/ P-Channel Power MOSFET
3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET
3.5A 200V 1.500 Ohm P-Channel Power MOSFET
From old datasheet system

File Size 57.96K  /  7 Page

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    IRF9Z24N IRF9Z24NPBF

IRF[International Rectifier]
Part No. IRF9Z24N IRF9Z24NPBF
OCR Text ... Typ. --- 0.50 --- Max. 3.3 --- 62 Units C/W 8/27/97 IRF9Z24N Electrical Characteristics @ TJ = 25C (unless otherwise spe...8V 16 C , C a p a c ita n c e (p F ) 500 C is s C os s 400 12 300 8 200 ...
Description -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)

File Size 105.16K  /  8 Page

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