| |
|
 |
DYNEX[Dynex Semiconductor]
|
| Part No. |
GP1600FSM12
|
| OCR Text |
... covering voltages from 600V to 3300v and currents up to 2400A. The GP1600FSM12 is a singlel switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RB... |
| Description |
Single Switch IGBT Module Advance Information
|
| File Size |
138.70K /
10 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
|
| Part No. |
GP1600FSM18
|
| OCR Text |
...covering voltages from 1200V to 3300v and currents up to 4800A. The GP1600FSM18 is a single switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBS... |
| Description |
Hi-Reliability Single Switch IGBT Module 1600 A, 1800 V, N-CHANNEL IGBT
|
| File Size |
126.66K /
9 Page |
View
it Online |
Download Datasheet |
| |
|
|
DYNEX[Dynex Semiconductor]
|
| Part No. |
GP1600FSS18
|
| OCR Text |
... covering voltages from 600V to 3300v and currents up to 4800A. The GP1600FSS18 is a single switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBS... |
| Description |
Single Switch IGBT Module
|
| File Size |
126.53K /
9 Page |
View
it Online |
Download Datasheet |
| |
|
|
DYNEX[Dynex Semiconductor]
|
| Part No. |
GP1601FSS18
|
| OCR Text |
... covering voltages from 600V to 3300v and currents up to 4800A. The GP1601FSS18 is a single switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. Designed with low VCE(SAT) to minimise conduction losses,... |
| Description |
Single Switch Low VCE(SAT) IGBT Module
|
| File Size |
123.85K /
9 Page |
View
it Online |
Download Datasheet |
| |
|
|
DYNEX[Dynex Semiconductor]
|
| Part No. |
GP200MHS12
|
| OCR Text |
... covering voltages from 600V to 3300v and currents up to 4800A. The GP200MHS12 is a half bridge 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA)... |
| Description |
Half Bridge IGBT Module
|
| File Size |
98.36K /
10 Page |
View
it Online |
Download Datasheet |
| |
|
|
DYNEX[Dynex Semiconductor]
|
| Part No. |
GP200MHS18
|
| OCR Text |
... covering voltages from 600V to 3300v and currents up to 4800A. The GP200MHS18 is a half bridge 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA)... |
| Description |
Half Bridge IGBT Module
|
| File Size |
135.14K /
10 Page |
View
it Online |
Download Datasheet |
| |
|
|
Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
|
| Part No. |
GP200MKS12
|
| OCR Text |
... covering voltages from 600V to 3300v and currents up to 2400A. The GP200MLS12 is a 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) chopper module configured with the upper arm of the bridge controlled. The modul... |
| Description |
IGBT Chopper Module Preliminary Information 200 A, 1200 V, N-CHANNEL IGBT
|
| File Size |
126.08K /
10 Page |
View
it Online |
Download Datasheet |
| |
|
|
DYNEX[Dynex Semiconductor]
|
| Part No. |
GP200MLS12
|
| OCR Text |
... covering voltages from 600V to 3300v and currents up to 2400A. The GP200MLS12 is a 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) chopper module configured with the lower arm of the bridge controlled. The modul... |
| Description |
IGBT Chopper Module Preliminary Information
|
| File Size |
126.55K /
10 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
