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STMicroelectronics N.V.
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| Part No. |
STB140NF55
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| OCR Text |
...p140nf55 55v <0.008 ? 80a 1 3 1 2 3 1 2 3 d2pak to-220 i2pak stb140nf55 - stb140nf55-1 stp140nf55 n-channel 55v - 0.0065 ? - 80a - d 2 pak - i 2 pak - to-220 stripfet? ii power mosfet www.st.com order codes part number marking package pack... |
| Description |
N-channel 55V - 0.0065- 80A - D2PAK - I2PAK - TO-220 STripFETII Power MOSFET N沟道55V 0.0065 80A采用D2PAK - I2PAK -到二220 STripFET⑩功率MOSFET
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| File Size |
452.87K /
15 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
BUK9225-55A
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| OCR Text |
...motive critical applications. 1.2 features and benefits ? aec q101 compliant ? low conduction losses due to low on-state resistance ? suita...55v i d drain current v gs =5v; t mb =25c; see figure 1 ; see figure 3 --43a p tot total power di... |
| Description |
N-channel TrenchMOS logic level FET N沟道TrenchMOS逻辑电平场效应管
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| File Size |
183.17K /
13 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
BUK72150-55A
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| OCR Text |
...motive critical applications. 1.2 features and benefits ? aec q101 compliant ? low conduction losses due to low on-state resistance ? suita...55v i d drain current v gs =10v; t mb =25c; see figure 3 ; see figure 1 --11a p tot total power ... |
| Description |
N-channel TrenchMOS standard level FET N沟道TrenchMOS标准电平场效应管
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| File Size |
166.74K /
13 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
BUK9512-55B BUK9512-55B-15
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| OCR Text |
...motive critical applications. 1.2 features and benefits ? low conduction losses due to low on-state resistance ? q101 compliant ? suitable ...55v i d drain current v gs =5v; t mb =25c; see figure 3 ; see figure 1 [1] --75a p tot total power... |
| Description |
N-channel TrenchMOS logic level FET N沟道TrenchMOS逻辑电平场效应管
N-channel TrenchMOS logic level FET
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| File Size |
158.56K /
14 Page |
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it Online |
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International Rectifier, Corp.
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| Part No. |
IRF7342PBF
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| OCR Text |
...ous drain current, v gs @ 10v -2.7 a i dm pulsed drain current -27 p d @t c = 25c power dissipation 2.0 p d @t c = 70c power dissipa...55v, v gs = 0v ??? ??? -25 v ds = -55v, v gs = 0v, t j = 55c gate-to-source forward leakage ??? ... |
| Description |
HEXFETPower MOSFET (VDSS = -55V , RDS(on) = 0.105 ㈢的HEXFET功率MOSFET（减振钢板基本\u003d - 55V的，的RDS（on）\u003d 0.105ヘ）
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| File Size |
156.81K /
7 Page |
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it Online |
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