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意法半导
STMicro
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| Part No. |
CLP30-200B1 5477
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| OCR Text |
...etector Overvoltage reference (>200v) 1
2 1
-200
VLG
OR SW1
1 3
+200
VLG
GND
In ringing mode (Ring relay in positio...ms tp = 200 ms tp = 1 s Value 30 40 8.5 4.5 3.5 -40 to +150 150 260 Unit A A C C
ITSM
Tstg Tj ... |
| Description |
Overvoltage and Overcurrent Protection for Telcom Line(电信装备的过压和过流保护)
From old datasheet system
OVERVOLTAGE AND OVERCURRENT PROTECTION FOR TELECOM LINE
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| File Size |
107.13K /
11 Page |
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it Online |
Download Datasheet
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http://
VISAY[Vishay Siliconix]
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| Part No. |
BYT86 BYT86-800 BYT86-1000 BYT86-600
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| OCR Text |
... IF=8A, diF/dt =-100A/ms, VBatt=200v m IF=8A, diF/dt =-100A/ms, VBatt=200v IF=0.5A, IR=1A, iR=0.25A Type Symbol Min Typ Max Unit VF 1.8 V VF 1.8 V IR 10 mA IR 0.2 mA tfr 350 ns VFP 7 V IRM tIRM trr trr 12 110 150 80 A ns ns ns
Characteri... |
| Description |
Ultra Fast Recovery Silicon Power Rectifier
From old datasheet system
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| File Size |
62.43K /
4 Page |
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it Online |
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Fairchild Semiconductor, Corp.
Tripath Technology Inc.
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| Part No. |
FDP39N20
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| OCR Text |
200v N-Channel MOSFET
UniFET
FDP39N20
200v N-Channel MOSFET Features
* 39A, 300V, RDS(on) = 0.066 @VGS = 10 V * Low gate charge ( typi...ms 10 ms 100 ms DC
30
20
Notes :
10
-1
1. TC = 25 C 2. TJ = 150 C 3. Single Pulse... |
| Description |
DIODE ZENER SINGLE 350mW 16Vz 7.8mA-Izt 0.05 0.1uA-Ir 12 SOT-23 3K/REEL 39 A, 200 V, 0.066 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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| File Size |
852.40K /
8 Page |
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it Online |
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Fairchild Semiconductor
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| Part No. |
FDPF33N25T FAIRCHILDSEMICONDUCTORCORP-FDPF33N25T
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| OCR Text |
... ds = 250v, v gs = 0v v ds = 200v, t c = 125 c -- -- -- -- 1 10 a a i gssf gate-body leakage current, forward v gs = 30v, v ds = 0v...ms 1 ms 10 s dc 10 ms 100 s operation in this area is limited by r ds(on) * notes : 1. t ... |
| Description |
250V N-Channel MOSFET; Package: TO-220F; No of Pins: 3; Container: Rail 33 A, 250 V, 0.094 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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| File Size |
1,105.65K /
10 Page |
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it Online |
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ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
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| Part No. |
STTH6003 STTH6003CW STTH6006CW STTH6006TV1 STTH6003TV STTH6003TCW
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| OCR Text |
...20 18 16 14 12 10 8 6 4 2 0
VR=200v Tj=125 C IF=IF(av) IF=2*IF(a v)
Fig. 5: Reverse recovery time versus dIF/dt (90% confidence, per diode).
trr(ns) 180 160 140 120 100 80 60 40 20 0
VR=200v Tj=125 C
IF=2*IF(av)
IF=0.5*IF(av)
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| Description |
30 A, 300 V, SILICON, RECTIFIER DIODE, TO-247
HIGH FREQUENCY SECONDARY RECTIFIER
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| File Size |
71.23K /
6 Page |
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it Online |
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