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ADPOW[Advanced Power Technology]
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| Part No. |
APTM50DSKM65T3
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| OCR Text |
...3 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/...51A Inductive switching @ 125C VGS = 15V VBus = 333V ID = 51A R G = 3 Inductive switching @ 25C VGS ... |
| Description |
Dual Buck chopper MOSFET Power Module
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| File Size |
317.61K /
6 Page |
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ADPOW[Advanced Power Technology]
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| Part No. |
APTM50TAM65FP
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| OCR Text |
...ptember, 2004
VBUS 1
VBUS 2
VBUS 3
G1 0/VBUS 1 S1 S2 G2 0/VBUS 2
G3 S3 S4 G4 0/VBUS 3
G5 S5 S6 G6
U
V
W
Absolu...51A Inductive switching @ 125C VGS = 15V VBus = 333V ID = 51A R G = 3 Inductive switching @ 25C VGS ... |
| Description |
Triple phase leg MOSFET Power Module
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| File Size |
313.48K /
6 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APTM50TDUM65P
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| OCR Text |
...10V, ID = 25.5A VGS = VDS, ID = 2.5mA VGS = 30 V, VDS = 0V
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf...51A Inductive switching @ 125C VGS = 15V VBus = 333V ID = 51A R G = 3 Inductive switching @ 25C VGS ... |
| Description |
51 A, 500 V, 0.065 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Triple dual common source MOSFET Power Module
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| File Size |
312.69K /
6 Page |
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it Online |
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IRF[International Rectifier]
http://
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| Part No. |
IRFZ44VSPBF IRFZ44VLPBF IRFZ44VL
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| OCR Text |
...istance and can dissipate up to 2.0W in a typical surface mount application.
D2Pak IRFZ44VS
TO-262 IRFZ44VL
The through-hole versio...51A 18 nC VDS = 48V 25 VGS = 10V, See Fig. 6 and 13 --- VDD = 30V --- ID = 51A ns --- RG = 9.1 --- ... |
| Description |
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
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| File Size |
213.84K /
10 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FCB11N6005 FCB11N60 FCB11N60TM
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| OCR Text |
... 25C) - Derate above 25C
(Note 2) (Note 1) (Note 1) (Note 3)
Parameter
- Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed
(Note...51A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 11A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C... |
| Description |
600V N-Channel MOSFET
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| File Size |
967.09K /
8 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRHNA8160 IRHNA7160
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| OCR Text |
...perature Weight 51 32.5 204 300 2.0 20 500 51 30 5.5 -55 to 150
Pre-Radiation
IRHNA7160, IRHNA8160 Units A
W W/K V mJ A mJ V/ns
oC
...51A VDS = VGS, ID = 1.0 mA VDS > 15V, IDS = 32.5A VDS = 0.8 x Max Rating,VGS = 0V VDS = 0.8 x Max R... |
| Description |
TRANSISTOR N-CHANNEL
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| File Size |
128.72K /
4 Page |
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it Online |
Download Datasheet |
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Price and Availability
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