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PROMOS TECHNOLOGIES INC
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Part No. |
SALF5
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OCR Text |
...ba1 programmable cas latency: 2, 2.5, 3 programmable wrap sequence: sequential or interleave programmable burst length: 2, 4, 8 for seq...4k : 12840 8mx16, 4k : 12816 16mx8, 4k : 12880 64mx4, 8k : 25640 16mx16, 8k : 25616 temperature 32mx... |
Description |
32M X 8 DDR DRAM, 0.65 ns, PBGA60
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File Size |
917.38K /
61 Page |
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CYPRESS SEMICONDUCTOR CORP
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Part No. |
C4201-25AI
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OCR Text |
...n2 ff d 8 d 7 d 6 d 5 d 4 d 3 d 2 1 2 3 4 5 6 7 8 d 1 d 0 rclk gnd paf pae ren1 ren2 17 18 19 20 21 22 23 24 14 15 16 910111213 31 30 32 29 ...4k 9 8k 9
cy7c4421/4201/4211/4221 cy7c4231/4241/4251 document #: 38-06016 rev. *a page 3 o... |
Description |
64/256/512/1K/2K/4k/8K x 9 Synchronous FIFOs
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File Size |
310.23K /
18 Page |
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Hynix Semiconductor
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Part No. |
HY51VS65163HG HY51VS65163HGJ-45 HY51VS65163HGJ-5 HY51VS65163HGJ-6 HY51VS65163HGLJ-45 HY51VS65163HGLJ-6 HY51VS65163HGLJ-5 HY51VS65163HGLT-45 HY51VS65163HGLT-5 HY51VS65163HGT-45 HY51VS65163HGLT-6 HY51VS65163HGT-5 HY51VS65163HGT-6
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OCR Text |
...1v(s)65163hg/hgl rev.0.1/apr.01 2 pin configuration pin function /ras row address strobe /ucas, /lcas column address strobe /we write enabl...4k ref. refresh period (l-version) - 128 - 128 - 128 ms 4k ref. parameter symbol -45 -50 -60 unit no... |
Description |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power
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File Size |
97.47K /
11 Page |
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it Online |
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Price and Availability
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