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30APU06 151TS 040010 IRF130 10006 F2828S SV2006M 74AC2
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Part No. K3N5V1000F-DC12
OCR Text ...ogy, and is organized either as 2,097,152 x 8 bit(byte mode) or as 1,048,576x16 bit(word mode) depending on bhe voltage level.(see mode selection table) this device operates with 3.0v or 3.3v power supply, and all inputs and outputs are ttl...
Description 1M X 16 MASK PROM, 120 ns, PDIP42

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Part No. KM23C8105DET-12
OCR Text 2 - a 18 address inputs q 0 - q 14 data outputs q 15 /a -1 output 15(word mode)/ lsb address(byte mode) bhe word/byte selection ce chip en...048,576 x 8 bit(byte mode) or as 524,288 x 16 bit(word mode) depending on bhe voltage level.(see mod...
Description 512K X 16 MASK PROM, 120 ns, PDSO44

File Size 87.62K  /  5 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KM23V8100D
OCR Text ...a 18 a 17 a 7 a 6 a 5 a 4 a 3 a 2 a 1 a 0 ce v ss oe q 0 q 8 q 1 q 9 sop km23v8100dg 1 2 44 43 3 4 42 41 5 6 40 39 7 8 38 37 9 10 36 35 11 12 34 33 13 14 32 31 15 16 30 29 17 18 28 27 19 20 26 25 21 22 24 23 q 2 q 10 q 3 q 11 q 11 a 18 a 1...
Description 8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM(8M1Mx8 /512Kx16) CMOS掩膜ROM)

File Size 81.69K  /  4 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KM23V8000D
OCR Text ...ogy. this device operates with 2.7v to 3.6v power supply, and all inputs and outputs are ttl compatible. because of its asynchronous opera...048,576 x 8 bit organization ? fast access time 3.3v operation : 100ns(max.) 3.0v operatio...
Description 8M-Bit (1Mx8) CMOS Mask ROM(8M(1Mx8) CMOS掩膜ROM)

File Size 32.34K  /  3 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KM23C8105D
OCR Text 2 - a 18 address inputs q 0 - q 14 data outputs q 15 /a -1 output 15(word mode)/ lsb address(byte mode) bhe word/byte selection ce chip en...048,576 x 8 bit(byte mode) or as 524,288 x 16 bit(word mode) depending on bhe voltage level.(see mod...
Description 8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM(8M1Mx8 /512Kx16)掩膜ROM)

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KM23C8100D KM23C8100DG
OCR Text ...a 18 a 17 a 7 a 6 a 5 a 4 a 3 a 2 a 1 a 0 ce v ss oe q 0 q 8 q 1 q 9 q 4 q 12 q 5 q 13 q 6 v ss q 14 q 7 q 15 /a -1 sop km23c8100dg functional block diagram 1 2 44 43 3 4 42 41 5 6 40 39 7 8 38 37 9 10 36 35 11 12 34 33 13 14 32 31 15 16 30...
Description 8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM(8M1Mx8 /512Kx16) CMOS掩膜ROM)

File Size 41.10K  /  3 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KM23C8100DT
OCR Text ...a 18 a 17 a 7 a 6 a 5 a 4 a 3 a 2 a 1 a 0 ce v ss oe q 0 q 8 q 1 q 9 q 4 q 12 q 5 q 13 q 6 v ss q 14 q 7 q 15 /a -1 tsop2 km23c8100d(e)t functional block diagram 1 2 44 43 3 4 42 41 5 6 40 39 7 8 38 37 9 10 36 35 11 12 34 33 13 14 32 31 15 ...
Description 8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM(8M(1Mx8 /512Kx16) CMOS掩膜 ROM)

File Size 56.79K  /  4 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KM23C8000D KM23C8000DG
OCR Text ...a 15 a 12 a 7 a 6 a 5 a 4 a 3 a 2 a 1 ce oe q 0 q 1 q 4 q 5 q 6 q 7 a 9 a 10 a 11 dip km23c8000d(g) functional block diagram 1 2 3 4 5 6 7 8 32 31 9 10 30 29 11 12 28 27 13 14 26 25 15 16 24 23 21 21 20 19 18 17 q 2 v ss v cc a 18 a 17 a 14...
Description 8M-Bit (1Mx8) CMOS Mask ROM(8M1Mx8) CMOS掩膜ROM)

File Size 73.32K  /  4 Page

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    DS2176 DS2176N DS2176QN

MAXIM - Dallas Semiconductor
Part No. DS2176 DS2176N DS2176QN
OCR Text ...xternally ideal for 1.544 to 2.048 mhz rate conversion interfaces to parallel or serial backplanes extracts and buffers robbed?bit signaling inhibits signaling updates during alarm or slip conditions integration feature ?debo...
Description T1 Receive Buffer

File Size 297.65K  /  15 Page

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    BS616LV1623 BS616LV1623TC BS616LV1623TC-55 BS616LV1623TC-70 BS616LV1623TCG55 BS616LV1623TCG70 BS616LV1623TCP55 BS616LV16

Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
BSI
ETC[ETC]
Brilliance Semiconductor
Part No. BS616LV1623 BS616LV1623TC BS616LV1623TC-55 BS616LV1623TC-70 BS616LV1623TCG55 BS616LV1623TCG70 BS616LV1623TCP55 BS616LV1623TCP70 BS616LV1623TI BS616LV1623TI-55 BS616LV1623TI-70 BS616LV1623TIG55 BS616LV1623TIG70 BS616LV1623TIP55 BS616LV1623TIP70
OCR Text ...23 * Vcc operation voltage : 2.7 ~ 3.6V * Very low power consumption : Vcc = 3.0V C-grade: 45mA (@55ns) operating current I -grade: 46mA ...048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc ra...
Description Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable
Asynchronous 16M(2Mx8 or 1Mx16 Switchable) bits Static RAM

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