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  15.000001 Datasheet PDF File

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    NGTB30N120IHSWG

ON Semiconductor
Part No. NGTB30N120IHSWG
OCR Text ...tter saturation voltage v ge = 15 v, i c = 30 a v ge = 15 v, i c = 30 a, t j = 150 c v cesat ? ? 2.0 2.6 2.4 ? v gate ? emitter thre...000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 figure 19. igbt transient thermal impedance pulse...
Description IGBT

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    NGTB30N120IHLWG

ON Semiconductor
Part No. NGTB30N120IHLWG
OCR Text ...tter saturation voltage v ge = 15 v, i c = 30 a v ge = 15 v, i c = 30 a, t j = 150 c v cesat ? ? 1.75 2.1 2.2 ? v gate ? emitter thr...000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 100 0 r jc = 0.48 0.001 0.01 0.1 1 10 0.000001 0.00...
Description IGBT

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    NSV60100DMTWTBG

ON Semiconductor
Part No. NSV60100DMTWTBG
OCR Text ...1 = ?25 ma, i b2 = 25 ma) t d 15 ns rise time (v cc = ?10 v, i c = ?0.5 a, i b1 = ?25 ma, i b2 = 25 ma) t r 13 ns storage time (v cc ...000001 0.1 1 10 100 r(t), effective transient thermal resistance ( c/w) 0.00001 0.0001 0.001 0.01 0...
Description 60 V, 1 A, Low VCE(sat) PNP Transistors

File Size 110.34K  /  6 Page

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    AON6414AL

Alpha & Omega Semiconductors
Part No. AON6414AL
OCR Text ...s (note e) 2 4 6 8 10 12 0 5 10 15 20 25 30 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e...000001 0.00001 0.0001 0.001 i ar (a) peak avalanche current time in avalanche, t a (s) figure 12: ...
Description 30V N-Channel MOSFET

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    NGTB20N120IHSWG

ON Semiconductor
Part No. NGTB20N120IHSWG
OCR Text ...tter saturation voltage v ge = 15 v, i c = 20 a v ge = 15 v, i c = 20 a, t j = 150 c v cesat ? ? 2.10 2.5 2.4 ? v gate ? emitter thr...000001 0.0001 0.001 0.01 0.1 thermal response (z jc ) 1 0.00001 50% duty cycle 20% 10% 5% 2% 1% si...
Description IGBT

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    NGTB20N120IHLWG

ON Semiconductor
Part No. NGTB20N120IHLWG
OCR Text ...tter saturation voltage v ge = 15 v, i c = 20 a v ge = 15 v, i c = 20 a, t j = 150 c v cesat ? ? 1.80 2.0 2.2 ? v gate ? emitter thr...000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 figure 18. igbt transient thermal impedance pulse...
Description Incorporated into the device is a rugged co?packaged free wheeling diode with a low forward voltage.

File Size 169.23K  /  9 Page

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    NGTB15N60S1EG

ON Semiconductor
Part No. NGTB15N60S1EG
OCR Text ...= 25 c @ t c = 100 c i c 30 15 a pulsed collector current, t pulse limited by t jmax i cm 120 a diode forward current @ t c = 25 c ...000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 figure 19. igbt transient thermal impedance pulse...
Description IGBT - Short-Circuit Rated
   IGBT - Short-Circuit Rated

File Size 172.95K  /  10 Page

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    NGTB15N60EG

ON Semiconductor
Part No. NGTB15N60EG
OCR Text ...= 25 c @ t c = 100 c i c 30 15 a pulsed collector current, t pulse limited by t jmax i cm 120 a diode forward current @ t c = 25 c ...000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 figure 19. igbt transient thermal impedance pulse...
Description IGBT - Short-Circuit Rated

File Size 171.67K  /  10 Page

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    NSV60101DMTWTBG

ON Semiconductor
Part No. NSV60101DMTWTBG
OCR Text ...) 7 5 3 1 0 40 120 240 30 25 20 15 10 5 0 0 5 15 20 30 35 figure 11. f t , current gain bandwidth product figure 12. power derating i c , co...000001 0.1 1 10 100 r(t), effective transient thermal resistance ( c/w) 0.00001 0.0001 0.001 0.01 0...
Description 60 V, 1 A, Low VCE(sat) NPN Transistors

File Size 102.05K  /  6 Page

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    NGTB15N120LWG

ON Semiconductor
Part No. NGTB15N120LWG
OCR Text ... = 25 c @ t c = 100 c i c 30 15 a pulsed collector current, t pulse limited by t jmax i cm 120 a diode forward current @ t c = 25 c @ ...000001 0.001 0.01 1 thermal response (z jc ) figure 19. diode transient thermal impedance 1 0.0000...
Description Incorporated into the device is a rugged co?packaged free wheeling diode with a low forward voltage.

File Size 169.92K  /  9 Page

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