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NXP Semiconductors N.V.
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Part No. |
PSMN4R1-30YLC
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OCR Text |
...) 0 200 150 50 100 03na19 40 80 120 p der (%) 0
psmn4r1-30ylc all information provided in this document is subject to legal disclaimers. ?...907 0 1 2 3 -60 0 60 120 180 t j ( ?c) v gs(th) (v) min (5 m a) ma x (1 m a) i d =5ma 1ma
psmn4r... |
Description |
N-channel 30 V 4.35m logic level MOSFET in LFPAK using NextPower technology 90 A, 30 V, 0.0057 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235
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File Size |
305.41K /
15 Page |
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Xiamen Hongfa Electroacoustic Co., Ltd.
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Part No. |
TGF2021-08
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OCR Text |
...0.089 0.089 0.089 0.089 nh ld 0.120 0.120 0.120 0.120 0.120 0.120 nh rgs 33000 33000 35100 28900 35700 24400 w rgd 349000 425000 405000 3050...907 -3.73 -2.196 -172.80 6 -0.190 -179.25 -3.326 51.64 -41.121 -3.54 -2.101 -172.60 6.5 -0.187 -179.... |
Description |
DC - 12 GHz Discrete power pHEMT 直流- 12吉赫的分立功率pHEMT
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File Size |
147.67K /
8 Page |
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NEC[NEC] NEC Corp.
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Part No. |
2SC4703 2SC4703NE46234 2SC4703SH
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OCR Text |
...RISTICS (TA = 25 C)
IC vs. VCE 120 100
IC-Collector Current-mA
IC vs. VBE 1000
IB = 0.7mA
0.6
IC-Collector Current-mA
0.5 80 ...907 4.897 4.054 3.711 3.207 2.836 2.598 2.444 2.244 2.051 1.939 1.916 1.745 1.680 1.581 1.627 1.455 ... |
Description |
MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MICROWAVE LOW NOISE LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MICROWAVE LOW NOISE/ LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits BJT
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File Size |
64.23K /
8 Page |
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it Online |
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Price and Availability
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