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Fairchild Semiconductor, Corp.
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| Part No. |
FFB10UP20STM
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| OCR Text |
... typ. max. units v fm * i f = 10a i f = 10a t c = 25 c t c = 150 c - - - - 1.15 1.0 v v i rm * v r = 200v v r = 200v t c = 25 c t c = 150 c - - - - 100 500 a a t rr i f =1a, di/dt = 100a/ s, v cc = 30v i f =10a, d... |
| Description |
Ultrafast Recovery Power Rectifier; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape & Reel 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB
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| File Size |
244.26K /
7 Page |
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Fairchild Semiconductor, Corp.
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| Part No. |
FGPF30N30TTU
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| OCR Text |
...itter saturation voltage i c = 10a , v ge = 15v -1.21.5v i c = 20a , v ge = 15v -1.5- v i c = 30a , v ge = 15v, t c = 25 o ...200v, i c = 20a, r g = 20 ? , v ge = 15v, inductive load, t c = 25 o c -22--ns t r rise time -... |
| Description |
300V, 30A PDP Trench IGBT; Package: TO-220F; No of Pins: 3; Container: Rail 300 V, N-CHANNEL IGBT, TO-220AB
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| File Size |
570.60K /
7 Page |
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it Online |
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Fairchild Semiconductor, Corp.
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| Part No. |
SGH10N60RUFD
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| OCR Text |
...e : v ce(sat) = 2.2 v @ i c = 10a high input impedance co-pak, igbt with frd : t rr = 42ns (typ.) absolute maximum ratings t c...200v i f = 12a t c = 25 t c = 100 ------ reverse recovery current, i rr [a] di/dt [a/u... |
| Description |
Short Circuit Rated IGBT(短路电流额定的绝缘栅双极晶体IGBT)) 16 A, 600 V, N-CHANNEL IGBT
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| File Size |
590.10K /
7 Page |
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it Online |
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Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
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| Part No. |
FK10SM-9
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| OCR Text |
.................................. 10a Integrated Fast Recovery Diode (MAX.) ........150ns
q
TO-3P
APPLICATION Servo motor drive, Robo...200v, ID = 5A, VGS = 10V, RGEN = RGS = 50
IS = 5A, VGS = 0V Channel to case IS = 10a, dis/dt = -1... |
| Description |
HIGH-SPEED SWITCHING USE 10 A, 450 V, 0.92 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
58.88K /
5 Page |
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it Online |
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