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  100ua-ir Datasheet PDF File

For 100ua-ir Found Datasheets File :: 417    Search Time::0.953ms    
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    BAS20

Rectron Semiconductor
Part No. BAS20
OCR Text ...itive Peak Reverse Voltage; IR= 100uA Repetitive Peak Forward Current Forward Voltage IF= 100mA IF= 200mA Reverse Current VR= 150V VR= 150V (Tj= 150 C) Reverse Recovery Time IF= IR= 10mA; RL= 100 Thermal Resistance (junction to ambient) N...
Description SURFACE MOUNT DIODE

File Size 17.69K  /  1 Page

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    NXP Semiconductors N.V.
Philips
Part No. PBYL2525CTBSERIES PBYL2525CTSERIES PBYL2525CT_CTB_SERIES_2 PBYL2525CTB/T3 PBYL2520CTB/T3
OCR Text ...p tp D= T 138 144 150 20 100uA 25 0 5 10 15 Average forward current, IF(AV) (A) 10uA 0 5 10 VR / V 15 20 ...IR = f(VR); parameter Tj 10 8 Forward dissipation, PF (W) Vo = 0.32 V Rs = 0.012 Ohms PBYL...
Description 12.5 A, 20 V, SILICON, RECTIFIER DIODE
12.5 A, 25 V, SILICON, RECTIFIER DIODE
From old datasheet system
Rectifier diodes Schottky barrier

File Size 41.77K  /  6 Page

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    BAT43

Taiwan Semiconductor Company, Ltd
Part No. BAT43
OCR Text ... BV 30 Breakdown Voltage @ IR=100uA Forward Voltage Drop All Types 1.0 BAT42 IF=200mA 0.40 BAT42 IF=10mA 0.65 BAT42 IF= 50mA VF 1.0 BAT43 IF=200mA 0.33 BAT43 IF =2.0mA 0.26 0.45 BAT43 IF=15mA Maximum Peak Reverse Current VR=25V 500 IR Jun...
Description 200 mW Hermetically Sealed Glass Fast Switching Schottky Barrier Diode

File Size 53.38K  /  2 Page

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    SHANGHAI BELLING
Part No. BL59A12
OCR Text ... iout = -1ua active, iout = 100ua to 500ua (load regulation) - 9.0 vdd-0.1 vdd-4.4 - vdd-5.6 vout output voltage (se...ir detector r8* 6. 8k r10* 4. 7 r12 1k r13* 4.7to22 vdd test bt1 9v vdd ...
Description (BL59A12 / BL59S12) PHOTOELECTRIC SMOKE DETECTOR IC

File Size 294.66K  /  8 Page

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    BAV99W BAW56W BAV70W BAL99W

FORMOSA[Formosa MS]
Part No. BAV99W BAW56W BAV70W BAL99W
OCR Text ...R IR V (BR) CD t rr 70 I R = 100uA , T P /T = 0.01 T P = 0.3ms V R = 0 , f = 1MHz , V HF = 50mV I F =10mA, V R = 10mA, I RR = 0.1 X I R ,...IR(REC)=1 mA VR OUTPUT PULSE (IF=IR=10mA;measured at iR(REC)=1mA) Notes : 1. A2.0 Kohm variable ...
Description DUAL SERIES SWITCHING DIODE - SILICON EPITAXIAL PLANAR TYPE

File Size 93.29K  /  2 Page

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    PBYR345CTD PBYR340CTD PBYR340

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PBYR345CTD PBYR340CTD PBYR340
OCR Text ...145 125 C I tp 147.5 100uA 75 C 50 C T 0 0 0.5 1 1.5 2 Average forward current, IF(AV) (A) 150 2.5 Tj = 25 C...IR = f(VR); parameter Tj 1.4 1.2 1 Forward dissipation, PF (W) Vo = 0.44 V Rs = 0.0867 Ohms ...
Description Rectifier diodes Schottky barrier

File Size 39.75K  /  5 Page

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    BYC10-600CT BYC10-600CT_3 BYC10-600CT127

NXP SEMICONDUCTORS
Philips
Part No. BYC10-600CT BYC10-600CT_3 BYC10-600CT127
OCR Text ...p 1mA Tj = 125 C 100 C 75 C 100uA 50 C 10 5 10uA 25 C 0 0 50 100 150 Rate of change of current, dIF/dt (A/ s) 200 ...IR = f(VR); parameter Tj Transient thermal impedance, Zth j-mb (K/W) I F 10 1 time V...
Description Rectifier diode ultrafast, low switching loss; Package: week 1, 2005
From old datasheet system

File Size 43.12K  /  6 Page

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    Philips
Part No. PBYR1025DSERIES
OCR Text ...1 0.5 130 10mA 100 75 50 100uA T t 1mA 5 I tp D= tp T 140 25 0 0 5 10 15 20 Average forward current...IR = f(VR); parameter Tj 12 10 Forward dissipation, PF (W) PBYL1625 Vo = 0.32 V Rs = 0.009 Oh...
Description Rectifier diodes Schottky barrier

File Size 39.36K  /  5 Page

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    NXP Semiconductors N.V.
Philips
Part No. PBYL3025CTBSERIES PBYL3025CTSERIES PBYL3020CTB/T3
OCR Text ...0.1 100mA 125 10mA 100 75 50 100uA 25 6 4 2 T t I tp 138 1mA D= tp 142 T 146 150 25 0 0 5 10 15 20 Average forwar...IR = f(VR); parameter Tj 10 8 PBYL3025CT Tmb(max) / C a = 1.57 130 134 10000 Cd / ...
Description 15 A, 20 V, SILICON, RECTIFIER DIODE
Rectifier diodes Schottky barrier

File Size 41.87K  /  6 Page

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    BAW56 BAV99 BAL99 BAV70

Formosa MS
Part No. BAW56 BAV99 BAL99 BAV70
OCR Text ...R IR V (BR) CD t rr 70 I R = 100uA , T P /T = 0.01 T P = 0.3ms V R = 0 , f = 1MHz , V HF = 50mV I F =10mA, V R = 10mA, I RR = 0.1 X I R ,...IR(REC)=1 mA VR OUTPUT PULSE (IF=IR=10mA;measured at iR(REC)=1mA) Notes : 1. A2.0 Kohm variable ...
Description DUAL SERIES SWITCHING DIODE - SILICON EPITAXIAL PLANAR TYPE

File Size 93.26K  /  2 Page

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For 100ua-ir Found Datasheets File :: 417    Search Time::0.953ms    
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