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				ANPEC[Anpec Electronics Coropration] ETC[ETC] Anpec Electronics Corporation
Part No.	APM2300AAC APM2300AAC-TR APM2300A
OCR Text	...ction T em p. R ange C : -55 to 1 50 C H andling C ode T R : T ape & R eel A P M 2300A A : A 0 0X X - D ate C ode Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25C...
Description	N-Channel Enhancement Mode MOSFET GT 3C 3#8 SKT RECP BOX RM
File Size	600.89K / 9 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S1G0732BNBSP K4S1G0732B-TC75 K4S1G0732B
OCR Text	1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004 ...32M x 8Bit x 4 Banks Synchronous DRAM FEATURES * JEDEC standard 3.3V power supply * LVTTL compatib...
Description	SDRAM stacked 1Gb B-die
File Size	124.59K / 12 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	KM416RD8AC KM418RD2AC KM418RD2AD KM418RD2C KM418RD32AD KM418RD32C KM418RD32D KM418RD4AC KM418RD4AD KM418RD4C KM418RD4D KM418RD8ACD-RK70 KM418RD8ACD-RK80 KM418RD8AD KM418RD8C KM418RD32AC KM418RD8AC KM418RD8ACD-RG60 KM418RD8D KM418RD2D KM416RD8D KM416RD16AC KM416RD16AD KM416RD16C KM416RD16D KM416RD2AC KM416RD2AD KM416RD2C KM416RD2D KM416RD32AC KM416RD32AD KM416RD32C KM416RD32D KM416RD4AC KM416RD4AD KM416RD4C KM416RD4D KM416RD8AC_D-RK70 KM416RD8AC_D-RK80 KM416RD8AC_DB-RCG60 KM416RD8AD KM416RD8C KM416RD8ACD-RK80 KM416RD8ACDB-RCG60 KM416RD8ACD-RK70 KM416RD8AC-RK70 KM416RD8AD-RK70 KM418RD8AC-RK70 KM418RD8AD-RK70 KM418RD8AC-RK80 KM418RD16AD
OCR Text	...anks Direct RDRAMTM Revision 1.01 October 1999 Page -2 Rev. 1.01 Oct. 1999 KM416RD8AC(D)/KM418RD8AC(D) Revision History Versio...32m/8K, 3.9us) -L : Low Power Self Refesh(32m/8K, 3.9us) -R : Normal Power Self Refesh(32m/16K, 1.9u...
Description	128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz).
File Size	4,041.48K / 64 Page	View it Online	Download Datasheet

				Linear Technology
Part No.	LTC1540 LTC1540IS8 LTC1540CS8 1540F LTC1540CMS8 LTC1540I LTC1540C
OCR Text	...commercial temperature range, a 1.182V 2% reference, programmable hysteresis and TTL/CMOS outputs that sink and source current. The referenc...32M 1% R2 3M 1% 7 V 3 IN + + LTC1540 SUPPLY CURRENT (A) 0.45 0.40 0.35 0.30 0.25 0.20 ...
Description	Nanopower Comparator with Reference From old datasheet system
File Size	246.37K / 12 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9K1208U0C K9K1208Q0C K9K1216D0C K9K1216Q0C K9K1216U0C K9K1208D0C
OCR Text	...tory Revision No. History 0.0 1.0 Initial issue. 1.Pin assignment of TBGA dummy ball is changed. (before) DNU --> (after) N.C 2. Add the R...32M x 16 Bit NAND Flash Memory Revision History Revision No. History 2.6 1. tREA value of 1.8V ...
Description	64M x 8 Bit / 32M x 16 Bit NAND Flash Memory 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
File Size	806.29K / 39 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9K1G08U0A K9K1G08U0A1 K9K1G16U0A K9K1G08Q0A K9K1G16Q0A
OCR Text	...ry Revision No. History 0.0 0.1 Initial issue. 1. Note is added. (VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durat...32M Bit NAND Flash ARRAY A0 - A7 (512 + 16)Byte x 262,144 Page Register & S/A A8 Command C...
Description	128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
File Size	902.07K / 43 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9K1G08U0B K9K1G08B0B K9K1G08R0B
OCR Text	...ry Revision No. History 0.0 0.1 Initial issue. 1. Note 1 ( Program/Erase Characteristics) is added( page 13 ) 2. NAND Flash Technical Note...32M Bit NAND Flash ARRAY A0 - A7 (512 + 16)Byte x 262,144 Page Register & S/A A8 Command C...
Description	128M x 8 Bit NAND Flash Memory
File Size	945.71K / 41 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9K1G08U0M-YCB0 K9K1G08U0M-YIB0
OCR Text	1 0.2 FLASH MEMORY History 1. Initial issue 1.[Page 31] device code (76h) --> device code (79h) 1.Powerup sequence is added : Recover...32M Bit NAND Flash ARRAY A0 - A7 (512 + 16)Byte x 262,144 Page Register & S/A A8 Command C...
Description	128M x 8 Bit NAND Flash Memory
File Size	465.75K / 37 Page	View it Online	Download Datasheet

				RENESAS
Part No.	M5M29KB_T3
OCR Text	...A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 M5M29KB/T331ATP 52 51 50 49 48 47...32M Flash Memory Block Diagram Vcc GND A0 to A20 CE# OE# WE# WP# RP# BYTE# 32Mbit DINOR IV...
Description	NOR type Flash Memory
File Size	261.27K / 32 Page	View it Online	Download Datasheet

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