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hitachi
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| Part No. |
2SC2776
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| OCR Text |
...0 4 --
1
Typ -- -- -- -- -- 0.8 1.1 320 5.5 17
Max -- -- -- 0.5 200 1.2 -- -- -- --
Unit V V V A
Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = I E = 10 A, IC = 0 VCB = 10 V, IE = 0 VCE = 6 V, IC = 1 mA
Collector to e... |
| Description |
Silicon NPN Epitaxial Planar
From old datasheet system
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| File Size |
17.84K /
4 Page |
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it Online |
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Laird Technologies, Inc.
Matsshita / Panasonic
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| Part No. |
2SC2778 2SC2778B
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| OCR Text |
0.3
+0.2
s Features
q
+0.2
0.650.15
+0.25 1.5 -0.05
0.650.15
1.90.2
q
2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Coll... |
| Description |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | TO-236 晶体管|晶体管|叩| 20V的五（巴西）总裁| 30mA的一（c）|36
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| File Size |
65.45K /
4 Page |
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it Online |
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panasonic
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| Part No. |
2SC2778
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| OCR Text |
0.40+0.10 n0.05 0.16+0.10 -0.06
1.50+0.25 -0.05
s Features
q q
3
Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. Mini type package, allowing downsizing of the equipment and automatic insertion throug... |
| Description |
Mini3-G1
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| File Size |
62.62K /
4 Page |
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it Online |
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Sanyo
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| Part No. |
2SC3042
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| OCR Text |
... VCE(sat) VBE(sat) VCB=400V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1.6A VCE=5V, IC=8A IC=8A, IB=1.6A IC=8A, IB=1.6A 15* 8 1.0 1.5 V V Conditions Ratings min typ max 10 10 50* Unit A A
* : The hFE1 of the 2SC3042 is classified as follows. When spe... |
| Description |
NPN Triple Diffused Planar Silicon Transistor 400V/12A Switching Regulator Applications
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| File Size |
92.06K /
4 Page |
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it Online |
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Sanyo
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| Part No. |
2SC3083
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| OCR Text |
... VCE(sat) VBE(sat) VCB=400V, IE=0 VEB=5V, IC=0 VCE=5V, IC=0.4A VCE=5V, IC=2A IC=2A, IB=0.4A IC=2A, IB=0.4A 15* 8 1.0 1.5 V V Conditions Ratings min typ max 10 10 50* Unit A A
* : The hFE1 of the 2SC3083 is classified as follows. When spe... |
| Description |
NPN Triple Diffused Planar Silicon Transistor
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| File Size |
97.09K /
4 Page |
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it Online |
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Sanyo
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| Part No. |
2SC3676
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| OCR Text |
... VCE(sat) VBE(sat) VCB=900V, IE=0 VEB=4V, IC=0 VCE=5V, IC=30mA VCE=10V, IC=30mA IC=60mA, IB=12mA IC=60mA, IB=12mA 1500 900 5 5.0 30 6 5 2 MHz V V V V V pF Conditions Ratings min typ max 10 10 Unit A A
V(BR)CBO IC=1mA, IE=0 V(BR)CEO IC=1m... |
| Description |
NPN Triple Diffused Planar Silicon Transistor 900V/300mA High-Voltage Amplifier High-Voltage Switching Applications
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| File Size |
95.71K /
3 Page |
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it Online |
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Sanyo
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| Part No. |
2SC4404
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| OCR Text |
...ions
unit:mm 2059B
[2SC4404]
0.425
0.3 3 0~0.1
Features
* High cutoff frequency : fT=5.0GHz typ * High power gain : MAG=14dB typ (f=0.9GHz) * Small noise figure : NF=2.2dB typ (f=0.9GHz) * Very small-sized package permitting 2SC4404... |
| Description |
NPN Epitaxial Planar Silicon Transistor UHF Local Oscillator, Wide-Band Amplifier Applications
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| File Size |
112.71K /
5 Page |
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it Online |
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Price and Availability
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