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-32v Datasheet PDF File

For -32v Found Datasheets File :: 3216 Search Time::1.266ms
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				Advanced Power Electronics Corp.
Part No.	AP9563GH09 AP9563GJ09
OCR Text	...e current (t j =125 o c) v ds =-32v, v gs =0v - - -250 ua i gss gate-source leakage v gs = + 25v, v ds =0v - - + 100 na q g total gate charge 2 i d =-12a - 16 30 nc q gs gate-source charge v ds =-32v - 2.5 - nc q gd gate-drain ("miller") c...
Description	Lower Gate Charge, Simple Drive Requirement, Fast Switching Characteristic
File Size	96.43K / 4 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP9563GH-HF AP9563GJ-HF
OCR Text	...e current (t j =125 o c) v ds =-32v, v gs =0v - - -250 ua i gss gate-source leakage v gs = + 25v, v ds =0v - - + 100 na q g total gate charge 2 i d =-12a - 16 30 nc q gs gate-source charge v ds =-32v - 2.5 - nc q gd gate-drain ("miller") c...
Description	Lower Gate Charge, Simple Drive Requirement
File Size	96.45K / 4 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP9562GP-HF
OCR Text	...n-source leakage current v ds =-32v, v gs =0v - - -10 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =-16a - 15 24 nc q gs gate-source charge v ds =-32v - 3 - nc q gd gate-drain ("miller") char...
Description	Lower On-resistance, Simple Drive Requirement, Fast Switching Characteristic
File Size	90.52K / 4 Page	View it Online	Download Datasheet

				Vitesse Semiconductor Corporation ETC
Part No.	VSC8162
OCR Text	...nce voltage of approximately -1.32V on both the true and complement inputs. This input can either be DC coupled or AC coupled; it can also be driven single-ended or differentially. Figure 2 shows the configuration for single-ended, AC-coupl...
Description	2.488 Gbit/sec SONET/SDH 1:16 Demux with Clock Recovery
File Size	151.20K / 20 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP9561GP-HF
OCR Text	...n-source leakage current v ds =-32v, v gs =0v - - -10 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =-20a - 25 40 nc q gs gate-source charge v ds =-32v - 4.4 - nc q gd gate-drain ("miller") ch...
Description	Simple Drive Requirement, Fast Switching Characteristic 45 A, 40 V, 0.016 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
File Size	90.37K / 4 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp. Advanced Power Electron...
Part No.	AP9561GI-HF AP9561GI-HF-14
OCR Text	...n-source leakage current v ds =-32v, v gs =0v - - -10 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =-20a - 25 40 nc q gs gate-source charge v ds =-32v - 5 - nc q gd gate-drain ("miller") char...
Description	Lower Gate Charge, Simple Drive Requirement
File Size	90.75K / 4 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	BTS462T Q67060-S7402 BTS462-T
OCR Text	...e toff = f(Tj); RL = 47 160 32V 9V s 9V s 120 13.5V 120 t on toff 32V 100 100 80 80 60 60 40 40 20 20 0 -40 -20 0 20 40 60 80 100 120 C 160 0 -40 -20 0 2...
Description	High Speed CMOS Logic Decade Counter/Divider with 10 Decoded Outputs 16-SO -55 to 125 Smart Power High-Side-Switch Smart High Side Switches - 100mΩ, 5-34V 3,5A, P-TO-252-5
File Size	301.25K / 16 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp. Advanced Power Electron...
Part No.	AP9561GH-HF AP9561GJ-HF AP9561GJ-HF-14
OCR Text	...n-source leakage current v ds =-32v, v gs =0v - - -1 ua drain-source leakage current (t j =125 o c) v ds =-32v, v gs =0v - - -250 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =-20a - 25 40 nc...
Description	Simple Drive Requirement, Fast Switching Characteristic Lower On-resistance, Simple Drive Requirement 45 A, 40 V, 0.016 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
File Size	93.84K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFU4104 IRFR4104
OCR Text	...= 20V VGS = -20V ID = 42A VDS = 32V VGS = 10V VDD = 20V ID = 42A RG = 6.8 VGS = 10V e e Between lead, 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = 25V = 1.0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 3...
Description	40V Single N-Channel HEXFET Power MOSFET in a I-Pak package Power MOSFET(Vdss=40V / Rds(on)=5.5mohm / Id=42A) Power MOSFET(Vdss=40V, Rds(on)=5.5mohm, Id=42A) 40V Single N-Channel HEXFET Power MOSFET in a D-Pak package
File Size	178.95K / 11 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP9561AGJ-HF
OCR Text	...n-source leakage current v ds =-32v, v gs =0v - - -10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =-20a - 27 43 nc q gs gate-source charge v ds =-32v - 7 - nc q gd gate-drain ("miller") charge v...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	57.48K / 4 Page	View it Online	Download Datasheet

For -32v Found Datasheets File :: 3216 Search Time::1.266ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |