| |
|
 |
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| Part No. |
FDP13AN06A FDP13AN06A0 FDB13AN06A0 FDB13AN06A0NL
|
| OCR Text |
...in to Source On Resistance ID = 31A, VGS = 6V ID = 62A, VGS = 10V, TJ = 175oC 2 0.022 0.026 4 0.034 0.030 V 0.0115 0.0135
Dynamic Characteristics
CISS COSS CRSS Qg(TOT) Qg(TH) Qgs Qgs2 Qgd Input Capacitance Output Capacitance Reverse T... |
| Description |
N-Channel PowerTrench MOSFET 60V, 62A, 13.5mohm
N-Channel PowerTrench MOSFET 60V/ 62A/ 13.5m
N-Channel PowerTrench MOSFET, 60V, 62A, 0.0135 Ohms 62 A, 60 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
N-Channel PowerTrench MOSFET 60V, 62A, 13.5mз 62 A, 60 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
| File Size |
236.21K /
11 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
IRF[International Rectifier]
|
| Part No. |
IRHN57250SE
|
| OCR Text |
... 100K Rads (Si) RDS(on) 0.06 ID 31A
IRHN57250SE 200V, N-CHANNEL
5
TECHNOLOGY
SMD-1
International Rectifier's R5 TM technology provides high performance power MOSFETs for space applications. These devices have been character... |
| Description |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
|
| File Size |
173.24K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| Part No. |
HUFA76429P3 HUFA76429S3S HUFA76429S3ST
|
| OCR Text |
... VGS = 10V (Figures 9, 10) ID = 31A, VGS = 5V (Figure 9) ID = 30A, VGS = 4.5V (Figure 9) THERMAL SPECIFICATIONS Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient RJC RJA TO-220 and TO-263 1.36 62
oC/W oC/W
TC = ... |
| Description |
44A, 60V, 0.025 Ohm, N-Channel, Logic Level UltraFETPower MOSFETs
44A, 60V, 0.025 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs 47 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
| File Size |
205.01K /
10 Page |
View
it Online |
Download Datasheet |
| |
|
|
IRF[International Rectifier]
|
| Part No. |
IRF6609 IRF660B9 IRF6618TR1 IRF6618
|
| OCR Text |
...25C, ID = 1mA m VGS = 10V, ID = 31A VGS = 4.5V, ID = 25A
e e
VDS = VGS, ID = 250A VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 150C VGS = 20V VGS = -20V VDS = 10V, ID = 25A
See Fig. 17 VDS = 10V, VGS = 0V VDD = 16V, VGS = 4.5VAe I... |
| Description |
Power MOSFET
|
| File Size |
228.02K /
10 Page |
View
it Online |
Download Datasheet |
| |
|
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| Part No. |
IRF3708 IRF3708L IRF3708S
|
| OCR Text |
... junction diode. TJ = 25C, IS = 31A, VGS = 0V TJ = 125C, IS = 31A, VGS = 0V TJ = 25C, I F = 31A, VR=20V di/dt = 100A/s TJ = 125C, IF = 31A, VR=20V di/dt = 100A/s
2
www.irf.com
IRF3708/3708S/3708L
1000
VGS TOP 10.0V 5.0V 4.5V ... |
| Description |
Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62A) 功率MOSFET（减振钢板基本\u003d 30V的，的Rdson）最大值\u003d 12mohm，身份证\u003d 62A条）
Power MOSFET(Vdss=30V/ Rds(on)max=12mohm/ Id=62A)
|
| File Size |
137.00K /
10 Page |
View
it Online |
Download Datasheet |
| |
|
|
IRF[International Rectifier]
|
| Part No. |
IRG4BC40S
|
| OCR Text |
... typ. = 1.32V
@VGE = 15V, IC = 31A
n-channel
Benefits
* Generation 4 IGBTs offer highest efficiency available * IGBTs optimized for specified application conditions * Designed to be a "drop-in" replacement for equivalent industry-stan... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V Vce(on)typ.=1.32V @Vge=15V Ic=31A)
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A)
600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package
|
| File Size |
154.81K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
IRF[International Rectifier]
|
| Part No. |
IRF3707 IRF3707L IRF3707S IRF3707PBF IRF3707STRL IRF3707STRR
|
| OCR Text |
... junction diode. TJ = 25C, IS = 31A, VGS = 0V TJ = 125C, IS = 31A, VGS = 0V TJ = 25C, I F = 31A, VR=20V di/dt = 100A/s TJ = 125C, IF = 31A, VR=20V di/dt = 100A/s
2
www.irf.com
IRF3707/3707S/3707L
1000
VGS TOP 10.0V 9.0V 8.0V ... |
| Description |
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=30V Rds(on)max=12.5mohm Id=62A)
Power MOSFET(Vdss=30V, Rds(on)max=12.5mohm, Id=62A)
Power MOSFET(Vdss=30V/ Rds(on)max=12.5mohm/ Id=62A)
|
| File Size |
141.65K /
10 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
