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74LS192N MAX4372H SGM8291 LES010ZE 120AT 2SC3852 02009 27V20
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  -17a Datasheet PDF File

For -17a Found Datasheets File :: 1389    Search Time::1.219ms    
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    2N722510

Microsemi Corporation
Part No. 2N722510
OCR Text ... (2) v gs = 10vdc, i d = 17a electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit drain-source breakdown voltage v gs = 0v, i d = 1madc v (br)dss 200 ...
Description N-CHANNEL MOSFET

File Size 162.00K  /  4 Page

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    FMV17N60ES

Fuji Electric
Part No. FMV17N60ES
OCR Text ...gate charge q g v cc =300v i d =17a v gs =10v - 68 114 nc gate-source charge q gs - 23 34.5 gate-drain charge q gd - 24 36 gate-drain crossover charge q sw - 10 15 avalanche capability i av l=2.00mh, t ch =25c 17 - - a diode forward on-volt...
Description N-CHANNEL SILICON POWER MOSFET

File Size 460.83K  /  5 Page

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    BSS11906 BSS119E6327

Infineon Technologies AG
Infineon Technologies A...
Part No. BSS11906 BSS119E6327
OCR Text ...8 reverse diode d v /d t i s =0.17a, v ds =80v, d i /d t =200a/s, t jmax =150c d v /d t 6 kv/s gate source voltage v gs 20 v power dissipation t a =25c p tot 0.36 w operating and storage temperature t j , t stg -55... +150 c iec climati...
Description SIPMOS Small-Signal-Transistor
SIPMOS Small-Signal-Transistor

File Size 88.19K  /  8 Page

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    FMH17N60ES

Fuji Electric
Part No. FMH17N60ES
OCR Text ...gate charge q g v cc =300v i d =17a v gs =10v - 68 114 nc gate-source charge q gs - 23 34.5 gate-drain charge q gd - 24 36 gate-drain crossover charge q sw - 10 15 avalanche capability i av l=2.00mh, t ch =25c 17 - - a diode forward on-volt...
Description N-CHANNEL SILICON POWER MOSFET

File Size 473.11K  /  5 Page

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    2SK3891-01R

Fuji Electric
Part No. 2SK3891-01R
OCR Text ...v gs =0v f=1mhz v cc =350v i d =17a v gs =10v i f =17a v gs =0v t ch =25c i f =17a v gs =0v -di/dt=100a/s t ch =25c v v a a v a a mj mj kv/s kv/s w c c kvrms 700 3.0 5.0 25 250 100 0.47 0.60 6.0 12 1750 2625 250 375 13 19....
Description N-CHANNEL SILICON POWER MOSFET

File Size 102.20K  /  4 Page

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    LB-401

Protech Systems Co., Ltd.
Part No. LB-401
OCR Text ...atx power +5v, +12v, -12v +5v:3.17a /+12v:2.84a (pentium 4-m 2.0ghz) +5v:3.42a /+12v:7.98a (pentium 4 3.06ghz) 185mm x 122mm (7.28" x 4.8") socket 478 p4/p4-m 5.25" board with vga/sound/2lan lb-401 lb-401 mpga478 intel 845gv ich4 ppci a30 b...
Description Embedded Board with VGA/Sound/2LAN

File Size 449.74K  /  2 Page

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    STL34NF06

STMicroelectronics
Part No. STL34NF06
OCR Text ...sfet (1) starting t j =25c,i d =17a,v dd = 42v typical r ds (on) = 0.024 w improved die-to-footprint ratio very low profile package description this power mosfet is the second generation of stmicroelectronics unique stripfet? technolo...
Description N-CHANNEL MOSFET

File Size 101.35K  /  6 Page

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    IRGPH40FD2

IRF[International Rectifier]
Part No. IRGPH40FD2
OCR Text ...t) 3.3V G @VGE = 15V, IC = 17A E n-channel Description Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one pa...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V @Vge=15V Ic=17A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=17A)

File Size 380.38K  /  8 Page

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    Vicor, Corp.
Part No. EXB50-48D05-3V3
OCR Text ...a from either output, and up to 17a in total. the converter is primarily intended for the networking, telecoms and wireless markets, where small size, lower output voltages with higher currents, low profile and high efficiency are all key d...
Description 50W High Efficiency DC/DC Converters 50瓦高效率DC / DC转换

File Size 47.69K  /  2 Page

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