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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQAF12P20
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| OCR Text |
...ics and Maximum Ratings
IS ISM vsd trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -8.6 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Reco... |
| Description |
200V P-Channel MOSFET
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| File Size |
613.58K /
8 Page |
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it Online |
Download Datasheet
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQAF16N25C
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| OCR Text |
...ics and Maximum Ratings
IS ISM vsd trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 11.4 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Reco... |
| Description |
250V N-Channel Advance Q-FET C-Series
250V N-Channel MOSFET
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| File Size |
854.42K /
8 Page |
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it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQAF22P10
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| OCR Text |
...ics and Maximum Ratings
IS ISM vsd trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -16.6 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Rec... |
| Description |
100V P-Channel MOSFET
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| File Size |
626.47K /
8 Page |
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it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQAF33N10L
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| OCR Text |
...ics and Maximum Ratings
IS ISM vsd trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 25.8 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Reco... |
| Description |
100V LOGIC N-Channel MOSFET
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| File Size |
646.60K /
8 Page |
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it Online |
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Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQAF33N10
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| OCR Text |
...ics and Maximum Ratings
IS ISM vsd trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 25.8 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Reco... |
| Description |
100V N-Channel MOSFET(漏源电压00V的N沟道增强型MOSFET) 25.8 A, 100 V, 0.052 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
569.66K /
8 Page |
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it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQAF55N10
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| OCR Text |
...ics and Maximum Ratings
IS ISM vsd trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 41.9 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Reco... |
| Description |
100V N-Channel MOSFET
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| File Size |
649.06K /
8 Page |
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it Online |
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CALMIRCO[California Micro Devices Corp]
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| Part No. |
CM3196-12SN CM3196 CM3196-12SB CM3196-12SH CM3196-12SM
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| OCR Text |
...50 30 IREF = -5A to 5A ITT = 0A vsd = logic "0" CONDITIONS MIN 2.2 2.2 TYP 2.5 2.5 450 115 MAX AVIN 5.5 UNITS V V A A
ICC ICCSD VTT
ILOAD = 0 to 2A or ILOAD = -2A to 0A ILOAD = 0 to 0.75A or ILOAD = -0.75A to 0A ILOAD = 0 to 0.3A or I... |
| Description |
2.0A Source/Sink DDR-I, -II Bus Termination Regulator
2A Sink/Source DDR-I, -II Bus Termination Regulator
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| File Size |
350.79K /
13 Page |
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it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQAF5N90
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| OCR Text |
...ics and Maximum Ratings
IS ISM vsd trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 4.1 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recov... |
| Description |
900V N-Channel MOSFET
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| File Size |
659.21K /
8 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQAF7N60
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| OCR Text |
...ics and Maximum Ratings
IS ISM vsd trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 5.7 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recov... |
| Description |
600V N-Channel MOSFET
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| File Size |
573.83K /
8 Page |
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it Online |
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SIEMENS[Siemens Semiconductor Group]
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| Part No. |
C67078-S3133-A2 BUZ339
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| OCR Text |
... C Values typ. max. Unit
ISM vsd trr Qrr
TC = 25 C
Inverse diode forward voltage
VGS = 0 V, IF = 23 A
Reverse recovery time
VR = 100 V, IF=lS, diF/dt = 100 A/s
Reverse recovery charge
VR = 100 V, IF=lS, diF/dt = 100 A/s
... |
| Description |
From old datasheet system
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
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| File Size |
220.03K /
9 Page |
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it Online |
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Price and Availability
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