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vdd vddq Datasheet PDF File

For vdd vddq Found Datasheets File :: 5112 Search Time::1.594ms
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				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S640832C K4S640832C-TC_L1L K4S640832C-TC_L70 K4S640832C-TC_L80 K4S640832C-TC_L1H K4S640832C-TC_L10 K4S640832C-TC/L10 K4S640832C-TC/L1H K4S640832C-TC/L1L K4S640832C-TC/L70 K4S640832C-TC/L80
OCR Text	... PIN CONFIGURATION (Top view) vdd DQ0 vddQ N.C DQ1 VSSQ N.C DQ2 vddQ N.C DQ3 VSSQ N.C vdd N.C WE CAS RAS CS BA0 BA1 A10/AP A0 A1 A2 A3 vdd 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47 46 ...
Description	64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
File Size	128.76K / 11 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S640832D K4S640832D-TC_L10 K4S640832D-TC_L1H K4S640832D-TC_L1L K4S640832D-TC_L80 K4S640832D-TC_L75 K4S640832D-TC/L10 K4S640832D-TC/L1H K4S640832D-TC/L1L K4S640832D-TC/L75 K4S640832D-TC/L80
OCR Text	... PIN CONFIGURATION (Top view) vdd DQ0 vddQ N.C DQ1 VSSQ N.C DQ2 vddQ N.C DQ3 VSSQ N.C vdd N.C WE CAS RAS CS BA0 BA1 A10/AP A0 A1 A2 A3 vdd 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47 46 ...
Description	64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
File Size	127.15K / 10 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K7A803600B-QC14 K7A803600B-QC16 K7A803609B K7A803609B-QC25 K7A801800 K7A801800B-QC14 K7A801800B-QC16 K7B803625 K7B803625B-QC65 K7B803625B-QC75 K7A801809B-QC25 K7A801809B K7B801825B-QC65 K7A801809B-QCI25 K7B801825B-QC75 K7D801871B-HC25
OCR Text	...PB(2E1D) SB SPB(2E1D) SPB(2E1D) vdd 3.3 3.3 3.3 3.3 3.3 3.3 Speed FT ; Access Time(ns) Pipelined ; Cycle Time(MHz) 6.5/7.5 ns 167/138 MHz 25...vddQ VSSQ PIN NAME Power Supply(+3.3V) Ground No Connect Data Inputs/Outputs TQFP PIN NO. 15,41,65,9...
Description	256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM 256Kx36 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM 256Kx36 & 512Kx18 SRAM
File Size	397.77K / 18 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K7A803601M K7A801801M K7A801809B K7A803609B
OCR Text	...e Current test Conditions) form vdd=VSS to vdd to Max. Remove 119BGA Package Type. Change DC Characteristics. ISB value from 65mA to 110mA a...vddQ Supply voltage( 2.5V ) Changed VOL Max value from 0.2V to 0.4V at 2.5V I/O. Final spec Release....
Description	256Kx36 & 512Kx18 Synchronous SRAM 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM 256K x 36 & 512K x 18-Bit Synchronous Pipelined Burst SRAM Data Sheet
File Size	465.04K / 17 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
Part No.	K7P401822B-HC16 K7P401822B-HC20 K7P401822B-HC25 K7P403622B-HC20 K7P403622B K7P403622B-HC16 K7P403622B-HC25 K7P401822B-HC160 K7P403622B-HC200 K7P401822B-HC20T
OCR Text	...Pin Discription. (M2=vddQ -> M2=vdd) - Add AC characteristics. (250Mhz, 166Mhz) - Update DC CHARACTERISTICS x36 : IDD25 : TBD -> 370, IDD20 -> 340, IDD16 -> 320. x18 : IDD25 : TBD -> 360, IDD20 -> 330, IDD16 -> 310. - Final Version - Add si...
Description	SENSOR DIFF VACUUM GAGE 10 H2O 128K × 36 128Kx36 & 256Kx18 Synchronous Pipelined SRAM 128K × 36 256K X 18 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119 128K X 36 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119 256K X 18 STANDARD SRAM, 3 ns, PBGA119 14 X 22 MM, BGA-119 SENSOR DIFF VACUUM GAGE 1PSI SENSOR ABSOLUTE 0-15PSIA 128Kx36 & 256Kx18 Synchronous Pipelined SRAM
File Size	278.02K / 13 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K7P401822M-H16 K7P401822M-H19 K7P401822M-H20 K7P403622M K7P403622M-H16 K7P403622M-H19 K7P403622M-H20 K7P401822B-HC16 K7P401822B-HC20 K7P401822B-HC25 K7P403622B-HC16 K7P403622B-HC20 K7P403622B-HC25
OCR Text	...K SAn DQn SW SWa SWb SWc SWd ZZ vdd Pin Description Differential Clocks Synchronous Address Input Bi-directional Data Bus Synchronous Global...vddQ M1, M2 G SS TCK TMS TDI TDO VSS NC Pin Description Output Power Supply Read Protocol Mode Pins ...
Description	128Kx36 & 256Kx18 Synchronous Pipelined SRAM 128K × 36 128Kx36 & 256Kx18 Synchronous Pipelined SRAM
File Size	239.13K / 12 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	M28W800BT85N1T M28W800BT85N6T M28W800BT85ZB1T M28W800BT85ZB6T M28W800BB M28W800BB1 M28W800BT90ZB6T M28W800 M28W800BB10N1T M28W800BB10N6T M28W800BB10ZB1T M28W800BB10ZB6T M28W800BB70N1T M28W800BB70N6T M28W800BB70ZB1T M28W800BB70ZB6T M28W800BB85N1T M28W800BB85N6T M28W800BB85ZB1T M28W800BB85ZB6T M28W800BB90N1T M28W800BB90N6T M28W800BB90ZB1T M28W800BB90ZB6T M28W800B-GBT M28W800BT M28W800BT10N1T M28W800BT10N6T M28W800BT10ZB1T M28W800BT10ZB6T M28W800BT70N1T M28W800BT70N6T M28W800BT70ZB1T M28W800BT70ZB6T M28W800BT90N1T M28W800BT90N6T M28W800BT90ZB1T
OCR Text	vdd = 2.7V to 3.6V Core Power Supply - vddQ= 1.65V to 3.6V for Input/Output - VPP = 12V for fast Program (optional) s s FBGA Figure 1. Packages ACCESS TIME: 70, 85, 90,100ns PROGRAMMING TIME - 10s typical - Double Word Programming O...
Description	8 Mbit 512Kb x16/ Boot Block 3V Supply Flash Memory 8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory 8 MBIT (512KB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY 8 Mbit 512Kb x16 Boot Block 3V Supply Flash Memory
File Size	287.01K / 42 Page	View it Online	Download Datasheet

				MICRON[Micron Technology]
Part No.	MT58L1MY18D MT58L512Y32D MT58L512Y36D MT58V512V36D MT58V512V32D
OCR Text	...65Vor 2.5V 0.125V power supply (vdd) * Separate +3.3V or 2.5V isolated output buffer supply (vddQ) * SNOOZE MODE for reduced-power standby * Common data inputs and data outputs * Individual BYTE WRITE control and GLOBAL WRITE * Three chip e...
Description	16Mb SYNCBURST⑩ SRAM 16Mb SYNCBURST SRAM
File Size	497.29K / 34 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	DSK7N163601A K7N163601 K7N163601A-QFCI13 K7N163601A-QFCI16 K7N163601A-QFCI20 K7N163601A-QFCI25 K7M163625A-QCI65 K7M163625A-QCI75 K7N161801A-QFCI13 K7N161801A-QFCI16 K7N161801A-QFCI20 K7N161801A-QFCI25 K7N163645A-QFCI13 K7N163645A-QFCI16 K7N163645A-QFCI20 K7N163645A-QFCI25 K7N161845A-QFCI13 K7N161845A-QFCI16 K7N161845A-QFCI20 K7N161845A-QFCI25 K7M161825A-QCI65/75 K7M161825A-QCI75 K7M321825M K7N161801A-QFCI25/20/ K7N163645A-Q_FC_I25 DS_K7N163601A K7M161825A-QC_I65 K7M161825A-QC_I65_75 K7M161825A-QC_I75 K7M163625A-QC_I65 K7M163625A-QC_I75 K7N161801A-Q_FC_I13 K7N161801A-Q_FC_I16 K7N161801A-Q_FC_I20 K7N161801A-Q_FC_I25 K7N161801A-Q_FC_I25_20_ K7N161845A K7N161845A-Q_FC_I13 K7N161845A-Q_FC_I16 K7N161845A-Q_FC_I20 K7N161845A-Q_FC_I25 K7N163601A-Q_FC_I13 K7N163601A-Q_FC_I16 K7N163601A-Q_FC_I20 K7N163601A-Q_FC_I25 K7N163645A K7N163645A-Q_FC_I13 K7N163645A-Q_FC_I16 K7N163645A-Q_FC_I20
OCR Text	...ormation Org. Part Number Mode vdd Speed FT ; Access Time(ns) Pipelined ; Cycle Time(MHz) 6.5/7.5 ns 250/200/167/133MHz 250/200/167/133MHz ...vddQ VSSQ DQc2 DQc3 DQc4 DQc5 VSSQ vddQ DQc6 DQc7 vdd vdd vdd VSS DQd0 DQd1 vddQ VSSQ DQd2 DQd3 DQd4...
Description	1Mx36 & 2Mx18 Flow-Through NtRAM 512Kx36 & 1Mx18 Pipelined NtRAM
File Size	277.57K / 24 Page	View it Online	Download Datasheet

				IDT[Integrated Device Technology]
Part No.	IDT70T651 IDT70T651S10BC IDT70T651S10BCI IDT70T651S10BF IDT70T651S10BFI IDT70T651S10DR IDT70T651S10DRI IDT70T651S12BC IDT70T651S12BCI IDT70T651S12BF IDT70T651S12BFI IDT70T651S12DR IDT70T651S12DRI IDT70T651S15BC IDT70T651S15BCI IDT70T651S15BF IDT70T651S15BFI IDT70T651S15DR IDT70T651S15DRI IDT70T651S8BC IDT70T651S8BCI IDT70T651S8BF IDT70T651S8BFI IDT70T651S8DR IDT70T651S8DRI IDT70T659S12BCI IDT70T659S12BC IDT70T659S8DRI IDT70T659S8DR IDT70T659S IDT70T659S10BC IDT70T659S10BCI IDT70T659S10BF IDT70T659S10BFI IDT70T659S10DR IDT70T659S10DRI IDT70T659S12BF IDT70T659S12BFI IDT70T659S12DR IDT70T659S12DRI IDT70T659S15BC IDT70T659S15BCI IDT70T659S15BF IDT70T659S15BFI IDT70T659S15DR IDT70T659S15DRI IDT70T659S8BC IDT70T659S8BCI IDT70T659S8BF IDT70T659S8BFI
OCR Text	...ply for the core of the device (vdd) is at 2.5V. 2 IDT70T651/9S High-Speed 2.5V 256/128K x 36 Asynchronous Dual-Port Static RAM Pre...vddQ pins must be connected to appropriate power supply: 3.3V if OPT pin for that port is set to vdd...
Description	HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE
File Size	340.48K / 27 Page	View it Online	Download Datasheet

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