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  transistor igbt power module h Datasheet PDF File

For transistor igbt power module h Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    Mitsubishi Electric, Corp.
Part No. CM50DY12E
Description transistor | igbt power module | hALF BRIDGE | 600V V(BR)CES | 50A I(C) 晶体管| igbt功率模块|半桥| 600V的五(巴西)国际消费电子展| 50A条一(c

File Size 317.55K  /  4 Page

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    IXYS, Corp.
Part No. VII125-12G4
Description transistor | igbt power module | hALF BRIDGE | 1.2KV V(BR)CES | 125A I(C) 晶体管| igbt功率模块|半桥| 1.2KV五(巴西)国际消费电子展| 125A条一(c

File Size 237.94K  /  4 Page

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    Mitel Networks, Corp.
Part No. GP200MhB12S
Description transistor | igbt power module | hALF BRIDGE | 1.2KV V(BR)CES | 200A I(C) 晶体管| igbt功率模块|半桥| 1.2KV五(巴西)国际消费电子展| 200安培我(丙)

File Size 451.00K  /  10 Page

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    MUBW6-06A6

Cooper Bussmann, Inc.
Part No. MUBW6-06A6
Description transistor | igbt power module | COMPLEX BRIDGE | 600V V(BR)CES | 7A I(C) 晶体管| igbt功率模块|络合物桥| 600V的五(巴西)国际消费电子展|7A我(丙)

File Size 403.80K  /  8 Page

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    Accutek Microcircuit, Corp.
Part No. ID621K30
Description transistor | igbt power module | hALF BRIDGE | 1KV V(BR)CES | 300A I(C) 晶体管| igbt功率模块|半桥| 1KV交五(巴西)国际消费电子展| 300我(丙)

File Size 281.65K  /  3 Page

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    Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
Part No. APTGF100A120TG
Description Phase leg NPT igbt power module 135 A, 1200 V, N-ChANNEL igbt

File Size 282.44K  /  6 Page

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    APTGF90A60T1G

MICROSEMI power PRODUCTS GROUP
Microsemi Corporation
Part No. APTGF90A60T1G
Description 110 A, 600 V, N-ChANNEL igbt
Phase leg NPT igbt power module

File Size 311.76K  /  6 Page

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    GAL16V8 GAL16V8AS-20QC3 GAL16V8AS GAL16V8AS-10EB1 GAL16V8AS-10EB3 GAL16V8AS-10EC1 GAL16V8AS-10EC3 GAL16V8AS-10HB1 GAL16V

STMicroelectronics N.V.
意法半导
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. GAL16V8 GAL16V8AS-20QC3 GAL16V8AS GAL16V8AS-10EB1 GAL16V8AS-10EB3 GAL16V8AS-10EC1 GAL16V8AS-10EC3 GAL16V8AS-10hB1 GAL16V8AS-10hB3 GAL16V8AS-10hC1 GAL16V8AS-10hC3 GAL16V8AS-10QB1 GAL16V8AS-10QB3 GAL16V8AS-10QC1 GAL16V8AS-10QC3 GAL16V8AS-12EB1 GAL16V8AS-12EB3 GAL16V8AS-12EC1 GAL16V8AS-12EC3 GAL16V8AS-12hB1 GAL16V8AS-12hB3 GAL16V8AS-12hC1 GAL16V8AS-12hC3 GAL16V8AS-12QB1 GAL16V8AS-12QB3 GAL16V8AS-12QC1 GAL16V8AS-12QC3 GAL16V8AS-15EB1 GAL16V8AS-15EB3 GAL16V8AS-15EC1 GAL16V8AS-15EC3 GAL16V8AS-15hB1 GAL16V8AS-15hB3 GAL16V8AS-15hC1 GAL16V8AS-15hC3 GAL16V8AS-15QB1 GAL16V8AS-15QB3 GAL16V8AS-15QC1 GAL16V8AS-15QC3 GAL16V8AS-20EB1 GAL16V8AS-20EB3 GAL16V8AS-20EC1 GAL16V8AS-20EC3 GAL16V8AS-20hB1 GAL16V8AS-20hB3 GAL16V8AS-20hC1 GAL16V8AS-20hC3 GAL16V8AS-20QB1 GAL16V8AS-20QB3 GAL16V8AS-20QC1 -GAL16V8AS-20hB3 -GAL16V8AS-20EC1 -GAL16V8AS-20EC3 -GAL16V8AS-10QC3
Description E2PROM CMOS PROGRAMMABLE LOGIC DEVICE E2PROM的可编程逻辑器件的CMOS
EMI/RFI FILTER
igbt module, TRENCh, 600V, 6 PACK; transistor type:3-Phase Bridge Inverter; Voltage, Vces:600V; Current, Ic continuous a max:174A; Voltage, Vce sat max:1.9V; Case style:SEMITOP 4; Current, Icm pulsed:400A; Temperature, Tj RohS Compliant: Yes
igbt module, 6 PACK 600Vigbt module, 6 PACK 600V; transistor type:igbt; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2.2V; Current, Ic continuous a max:24A; Current, Icm pulsed:22A; power, Pd:1700W; Time, rise:30ns;
EPROM CMOS Programmable Logic Device

File Size 736.53K  /  14 Page

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    DE150-201N09-00 DE375-501N21-00 DE275-102N05-00 DE375-301N35-00 DE150-501N04-00

TE Connectivity, Ltd.
Glenair, Inc.
Part No. DE150-201N09-00 DE375-501N21-00 DE275-102N05-00 DE375-301N35-00 DE150-501N04-00
Description transistor | MOSFET power module | INDEPENDENT | 200V V(BR)DSS | 9A I(D)
transistor | MOSFET power module | INDEPENDENT | 500V V(BR)DSS | 21A I(D)
transistor | MOSFET power module | INDEPENDENT | 1KV V(BR)DSS | 5A I(D) 晶体管| MOSFET功率模块|独立| 1KV交五(巴西)直| 5A条(丁)
transistor | MOSFET power module | INDEPENDENT | 300V V(BR)DSS | 35A I(D) 晶体管| MOSFET功率模块|独立| 300V五(巴西)直| 35A条(丁)
transistor | MOSFET power module | INDEPENDENT | 500V V(BR)DSS | 4.5A I(D)

File Size 60.46K  /  1 Page

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    Toshiba, Corp.
Part No. MIG20J806hA
Description transistor | igbt power module | COMPLEX BRIDGE | 600V V(BR)CES | 25A I(C) 晶体管| igbt功率模块|络合物桥| 600V的五(巴西)国际消费电子展|5A一(c

File Size 394.60K  /  9 Page

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For transistor igbt power module h Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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