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CEL[California Eastern Labs]
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| Part No. |
NE678M04-T2-A NE678M04
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| OCR Text |
...TLINE EIAJ3 REGISTRATION NUMBER symbols ICBO PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 5V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current1 Gain at VCE = 3 V, IC = 30 mA Output Power at 1 dB compression point... |
| Description |
MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
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| File Size |
127.57K /
8 Page |
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it Online |
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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
74LCX00TTR 74LCX00 74LCX00MTR
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| OCR Text |
...
74LCX00
Contents
1 2 Logic symbols and I/O equivalent circuit . . . . . . . . . . . . . . . . . . . . . . . . 3 Pin settings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 2.2 2.3... |
| Description |
Low voltage CMOS QUAD 2-Input NAND gate with 5V tolerant inputs
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| File Size |
222.18K /
15 Page |
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it Online |
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California Eastern Labs
NEC[NEC]
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| Part No. |
NE71383B NE71383
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| OCR Text |
...C)
PART NUMBER PACKAGE OUTLINE symbols NF PARAMETERS AND CONDITIONS Noise Figure , VDS = 3V, IDS = 10 mA, f = 4 GHz VDS = 3V, IDS = 10 mA, f = 12 GHz Associated Gain, VDS = 3V, IDS = 10 mA, f = 4 GHz VDS = 3V, IDS = 10 mA, f = 12 GHz Outpu... |
| Description |
L to Ku Band Low Noise N-Channel GaAs MESFET
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| File Size |
85.60K /
8 Page |
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it Online |
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CEL[California Eastern Labs]
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| Part No. |
NESG2030M04-T2-A NESG2030M04 NESG2030M04-A NESG2030M04-T2
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| OCR Text |
...GISTERED NUMBER PACKAGE OUTLINE symbols ICBO PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 5V, IE = 0 Emitter Cutoff Current at VEB = 0.5 V, IC = 0 DC Current Gain2 at VCE = 2 V, IC = 5 mA Reverse Transfer Capacitance3 at VCB ... |
| Description |
NPN SiGe HIGH FREQUENCY TRANSISTOR
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| File Size |
353.52K /
10 Page |
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it Online |
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CEL[California Eastern Labs]
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| Part No. |
NESG2031M05-T1-A NESG2031M05 NESG2031M05-T1
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| OCR Text |
...C)
PART NUMBER PACKAGE OUTLINE symbols NF Ga NF Ga RF MSG |S21E| P1dB OIP3 fT Cre ICBO DC IEBO hFE Notes: 1. MSG = S21 S12 2. Collector to base capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin... |
| Description |
NPN SiGe HIGH FREQUENCY TRANSISTOR
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| File Size |
572.15K /
13 Page |
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it Online |
Download Datasheet |
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NEC, Corp.
NEC Corp.
NEC[NEC]
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| Part No. |
NESG2031M05-T1 NESG2031M05
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| OCR Text |
...C)
PART NUMBER PACKAGE OUTLINE symbols NF Ga NF Ga RF MSG |S21E| P1dB OIP3 fT Cre ICBO DC IEBO hFE Notes: 1. MSG = S21 S12 2. Collector to base capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin... |
| Description |
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR 邻舍npn型硅锗高频陈德良SIS的职权范
From old datasheet system
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| File Size |
154.12K /
12 Page |
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it Online |
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CEL[California Eastern Labs]
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| Part No. |
NESG2101M05-T1-A NESG2101M05
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| OCR Text |
...C)
PART NUMBER PACKAGE OUTLINE symbols P1dB GL NF Ga NF Ga MSG |S21E| fT Cre ICBO DC IEBO hFE Notes:
2
NESG2101M05 M05 UNITS dBm dB dB dB dB dB dB dB GHz pF nA nA 130 190 14.5 11.5 14 11.0 MIN TYP 21 15 0.9 13.0 0.6 19.0 17.0 13.5 17 0... |
| Description |
NPN SiGe HIGH FREQUENCY TRANSISTOR
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| File Size |
390.70K /
15 Page |
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it Online |
Download Datasheet |
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NEC Corp.
NEC[NEC]
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| Part No. |
NESG2101M05-T1 NESG2101M05
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| OCR Text |
...C)
PART NUMBER PACKAGE OUTLINE symbols P1dB GL NF Ga RF NF Ga MSG |S21E| fT Cre ICBO DC IEBO hFE Notes:
2
NESG2101M05 M05 UNITS dBm dB dB dB dB dB dB dB GHz pF nA nA 130 190 14.5 11.5 14 11.0 MIN TYP 21 15 0.9 13.0 0.6 19.0 17.0 13.5 1... |
| Description |
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
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| File Size |
169.26K /
14 Page |
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it Online |
Download Datasheet |
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