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    IS42S16400B IS42S16400B-6T IS42S16400B-6TL IS42S16400B-7T IS42S16400B-7TL

ETC[ETC]
Part No. IS42S16400B IS42S16400B-6T IS42S16400B-6TL IS42S16400B-7T IS42S16400B-7TL
OCR Text ...S latency (2, 3 clocks) * Burst read/write operations capability * Burst termination by burst stop and precharge command * Byte controlled b...out of the application or use of any information, products or services described herein. Customers a...
Description 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

File Size 466.90K  /  55 Page

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    IS42S16800A IS42S16800A-10T IS42S16800A-10TI IS42S16800A-10TL IS42S16800A-10TLI IS42S16800A-6T IS42S16800A-6TL IS42S1680

ISSI[Integrated Silicon Solution, Inc]
ISSI[Integrated Silicon Solution Inc]
Part No. IS42S16800A IS42S16800A-10T IS42S16800A-10TI IS42S16800A-10TL IS42S16800A-10TLI IS42S16800A-6T IS42S16800A-6TL IS42S16800A-7T IS42S16800A-7TI IS42S16800A-7TL IS42S16800A-7TLI IS42S32400A IS42S32400A-10T IS42S32400A-10TI IS42S32400A-10TL IS42S32400A-10TLI IS42S32400A-6T IS42S32400A-6TL IS42S32400A-7T IS42S32400A-7TI IS42S32400A-7TL IS42S32400A-7TLI IS42S81600A IS42S81600A-10T IS42S81600A-10TI IS42S81600A-10TL IS42S81600A-6T IS42S81600A-6TL IS42S81600A-7T IS42S81600A-7TI IS42S81600A-7TL IS42S81600A-7TLI 42S16800A
OCR Text ...S latency (2, 3 clocks) * Burst read/write and burst read/single write operations capability * Burst termination by burst stop and precharge...out of the application or use of any information, products or services described herein. Customers a...
Description 16Meg x 8 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM

File Size 534.78K  /  61 Page

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    IS42S32200 IS42S32200-6T IS42S32200-6TI IS42S32200-7T IS42S32200-7TI 42S32200

ISSI[Integrated Silicon Solution, Inc]
ETC
Part No. IS42S32200 IS42S32200-6T IS42S32200-6TI IS42S32200-7T IS42S32200-7TI 42S32200
OCR Text ...S latency (2, 3 clocks) * Burst read/write and burst read/single write operations capability * Burst termination by burst stop and precharge...out of the application or use of any information, products or services described herein. Customers a...
Description 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

File Size 953.57K  /  55 Page

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    K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5616U0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5616U0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608U0C K9F5608U0C-D K9F5608U0C-F K9F5608U0C-H K9F5608U0C-P K9F5608U0C-V K9F5608U0C-Y K9F5616D0C K9F5616D0C-D K9F5616D0C-H K9F5616D0C-P K9F5616D0C-Y K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-H K9F5616U0C K9F5616U0C-D K9F5616U0C-H K9F5616U0C-P K9F5616Q0C-HCB0 K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-HIB0
OCR Text ...LOCK MECHANISM & POWER-ON AUTOt READ, connect it Vss.(Before) --> Not using LOCK MECHANISM & POWER-ON AUTO-READ, connect it Vss or leave it ...out at 50ns(K9F5616Q0C : 60ns) cycle time per word. The I/O pins serve as the ports for address and ...
Description 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory

File Size 679.73K  /  42 Page

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    IDT[Integrated Device Technology]
Part No. IDT72T2098L7BBI IDT72T20108 IDT72T20108L10BB IDT72T20108L10BBI IDT72T20108L4BB IDT72T20108L4BBI IDT72T20108L5BB IDT72T20108L5BBI IDT72T20108L6BB IDT72T20108L6BBI IDT72T20108L7BB IDT72T20108L7BBI IDT72T20118 IDT72T20118L10BB IDT72T20118L10BBI IDT72T20118L4BB IDT72T20118L4BBI IDT72T20118L5BB IDT72T20118L5BBI IDT72T20118L6BB IDT72T20118L6BBI IDT72T20118L7BB IDT72T20118L7BBI IDT72T20128 IDT72T20128L10BB IDT72T20128L10BBI IDT72T20128L4BB IDT72T20128L4BBI IDT72T20128L5BB IDT72T20128L5BBI IDT72T20128L6BB IDT72T20128L6BBI IDT72T20128L7BB IDT72T20128L7BBI IDT72T2098 IDT72T2098L10BB IDT72T2098L10BBI IDT72T2098L4BB IDT72T2098L4BBI IDT72T2098L5BB IDT72T2098L5BBI IDT72T2098L6BB IDT72T2098L6BBI IDT72T2098L7BB
OCR Text ...50MHz Operation of Clocks - 4ns read/write cycle time, 3.2ns access time Users selectable input port to output port data rates, 500Mb/s Data...out -x20 in to x10 out -x10 in to x20 out -x10 in to x10 out Auto power down minimizes standby power...
Description 2.5 VOLT HIGH-SPEED TeraSync⑩ DDR/SDR FIFO 20-BIT/10-BIT CONFIGURATION

File Size 475.63K  /  51 Page

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    K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C-DIB0 K9F5608Q0C-H K9F5608Q0C-HCB0 K9F5608Q0C-HIB0 K9F5608U0C K9F5608U

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C-DIB0 K9F5608Q0C-H K9F5608Q0C-HCB0 K9F5608Q0C-HIB0 K9F5608U0C K9F5608U0C-D K9F5608U0C-DCB0 K9F5608U0C-DIB0 K9F5608U0C-F K9F5608U0C-FCB0 K9F5608U0C-FIB0 K9F5608U0C-H K9F5608U0C-HCB0 K9F5608U0C-HIB0 K9F5608U0C-P K9F5608U0C-PCB0 K9F5608U0C-PIB0 K9F5608U0C-V K9F5608U0C-VCB0 K9F5608U0C-VIB0 K9F5608U0C-Y K9F5608U0C-YCB0 K9F5608U0C-YIB0 K9F1208Q0A K9F5616U0C K9F5616U0C-D K9F5616U0C-DCB0 K9F5616U0C-DIB0 K9F5616U0C-H K9F5616U0C-HCB0 K9F5616U0C-HIB0 K9F5616U0C-P K9F5616U0C-PCB0 K9F5616U0C-PIB0 K9F5616U0C-Y K9F5616U0C-YCB0 K9F5616U0C-YIB0 K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-H K9F5616Q0C-HCB0 K9F5616Q0C-HIB0 K9F1208Q0A-XXB0 K9F5608D0C-H K9F5608D0C-D K9F5608D0C-Y K9F5608D0C-P K9F5608U0M
OCR Text ...16X0C) : ( 8K + 256)Word * Page Read Operation - Page Size - X8 device(K9F5608X0C) : (512 + 16)Byte - X16 device(K9F5616X0C) : (256 + 8)Word...out at 50ns cycle time per word. The I/O pins serve as the ports for address and data input/output a...
Description 32M x 8 Bit NAND Flash Memory
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata

File Size 653.97K  /  39 Page

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    K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0

Samsung Electronics Inc
SAMSUNG[Samsung semiconductor]
Part No. K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0
OCR Text ...25ns. 2. Changed Sequential Row Read operation - The Sequential Read 1 and 2 operation is allowed only within a block 3. Changed invalid blo...out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output a...
Description From old datasheet system
EEPROM,NAND FLASH,33MX8,CMOS,TSSOP,48PIN,PLASTIC
32M x 8 Bit NAND Flash Memory

File Size 350.10K  /  26 Page

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    K9F5608U0 K9F5608U0A K9F5608U0A-YCB0 K9F5608U0A-YIB0

Samsung Electronic
Samsung semiconductor
Part No. K9F5608U0 K9F5608U0A K9F5608U0A-YCB0 K9F5608U0A-YIB0
OCR Text ...low state unless the sequential read mode excluding spare area is used. 4. Updated operation for tRST timing - If reset command(FFh) is writ...out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output a...
Description 32M x 8 Bit NAND Flash Memory

File Size 607.24K  /  29 Page

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    LM75DM-33R2 LM75DM-50R2 ON0319 LM75

ONSEMI[ON Semiconductor]
Part No. LM75DM-33R2 LM75DM-50R2 ON0319 LM75
OCR Text ...onitoring. All registers can be read by the host and the INT/CMPTR output's polarity is user programmable. Both polled and interrupt driven ...Out SDA Data In SCL t H (START) SCL SDA V A A A DD 2 1 0 ...
Description 2-Wire Serial Temperature Sensor and Monitor DIGITAL TEMP SENSOR-SERIAL, 9BIT(s), 3Cel, SQUARE, SURFACE MOUNT
From old datasheet system

File Size 150.47K  /  12 Page

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    INTEGRATED SILICON SOLUTION INC
Part No. IS41LV8200A-50J
OCR Text ...3.3v 10%  byte write and byte read operation via two cas  lead-free available description the issi is41lv8200a is 2,097,152 x 8-bit h...out write: word (early write) l l l x row/col d in read-write l l h ll h row/col d out , d in edo ...
Description 2M X 8 EDO DRAM, 50 ns, PDSO28

File Size 126.75K  /  20 Page

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