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JCS1N60C 2A243 LM339DR2 SA120 RU30230R FSL234D3 7130H 1040B
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For r-to-r Found Datasheets File :: 399395    Search Time::4.39ms    
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    2SC2732

HITACHI[Hitachi Semiconductor]
Part No. 2SC2732
OCR Text ...0 ******Disk Capacitor Unit R : C:F L:H 23 L1 : 1 mm Enameled Copper wire 11 90 120 4 13 22 L2 : 1 mm Enameled Coppe...to change without notice. Confirm that you have received the latest product standards or specificati...
Description Silicon NPN Transistor
Silicon NPN Epitaxial

File Size 35.50K  /  7 Page

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    2SC5002

SANKEN[Sanken electric]
Part No. 2SC5002
OCR Text ...ren t I C( A) Ma ximum Po we r Dissipatio n P C (W) 10 5 60 W ith In fin ite he 5 40 at si nk 1 Without Heatsink Natural Cooling L=3mH -IB2=1A Duty:less than 1% Without Heatsink Natural Cooling 0.5 20 Wit...
Description Silicon NPN Triple Diffused Planar Transistor(Display Horizontal Deflection Output, Switching Regulator and General Purpose)
Silicon NPN Triple Diffused Planar Transistor(Display Horizontal Deflection Output/ Switching Regulator and General Purpose)

File Size 23.63K  /  1 Page

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    2SC5026

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5026
OCR Text ...h FE Rank classification R 120 ~ 240 S 170 ~ 340 Rank hFE1 1 Transistor PC -- Ta 1.4 2SC5026 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 1.2 10 3 1 0.3 0.1 -25C 0.03 0.01 0.003 0.001 0.01 0.03 Ta=7...
Description Silicon NPN epitaxial planer type(For low-frequency output amplification)

File Size 36.23K  /  2 Page

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    2SD1010

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PANASONIC[Panasonic Semiconductor]
Part No. 2SD1010
OCR Text ...h FE Rank classification R 400 ~ 800 S T hFE 600 ~ 1200 1000 ~ 2000 Rank 1 Transistor PC -- Ta 500 160 Ta=25C 140 400 100 ...to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitte...
Description Silicon NPN epitaxial planer type(For low-frequency amplification)

File Size 37.40K  /  2 Page

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    2SD1022

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1022
OCR Text ...ime ts I =B2 5mA = Max 5Es B1 I R= 5 L Fall Time tf V = 4V Max 3 BB2 2SD1022 hFE - I C 10000 50C 100C Tc = 150C DC Current Gain hFE 1000 25C VCE = 3V Pulse width = 300s 1 8 0C -25C 100 -55C 0.1 Col...
Description Darlington Transistor(5A NPN)

File Size 273.90K  /  8 Page

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    2SD1023

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1023
OCR Text ...Time ts I =B2 5mA Max 8Es B1 I= R= 10 L Fall Time tf V = 4V Max 5 BB2 2SD1023 hFE - I C VCE = 3V Pulse width = 300s 10000 50C 100C Tc = 150C DC Current Gain hFE 1000 25C 0C -25C -55C 1 8 100 0.1 C...
Description Darlington Transistor(5A NPN)

File Size 290.46K  /  9 Page

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    2SD1024

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1024
OCR Text ...me ts I =B2 8mA = Max 5 Es B1 I R= 3 L Fall Time tf V = 4V Max 3 BB2 2SD1024 hFE - I C 10000 50C 100C Tc = 150C DC Current Gain hFE 1000 25C VCE = 3V Pulse width = 300s 1 10 12 0C -25C -55C 100 0.1 ...
Description Darlington Transistor(8A NPN)

File Size 275.54K  /  8 Page

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    2SD1025

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1025
OCR Text ...e ts I =B2 10mA = Max 8 Es B1 I R= 5 L Fall Time tf V = 4V Max 5 BB2 2SD1025 hFE - I C VCE = 3V Pulse width = 300s 10000 50C 100C Tc = 150C DC Current Gain hFE 1000 25C 0C -25C 1 10 12 100 -55C 0.1 C...
Description Darlington Transistor(8A NPN)

File Size 343.47K  /  8 Page

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    2SD1026

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1026
OCR Text ...= 13.3mA IB2 = 13.3mA VBB2 = 4V R L = 5 0 50 100 150 Case Temperature Tc [C] 2SD1026 Transient Thermal Impedance 1 0.01~10 [s] Transient Thermal Impedance jc(t) [C/W] 0.1 0.01~10 [ms] 10-2 10-1 100 101 Time...
Description Darlington Transistor(15A NPN)

File Size 405.96K  /  8 Page

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    2SD1027

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1027
OCR Text ...= 0.033A IB2 = 0.033A VBB2 = 4V R L = 5 0.1 0 50 100 150 Case Temperature Tc [C] 2SD1027 Transient Thermal Impedance 1 0.01~10 [s] Transient Thermal Impedance jc(t) [C/W] 0.1 0.01~10 [ms] 10-2 10-1 100 101 ...
Description Darlington Transistor(15A NPN)

File Size 456.51K  /  10 Page

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