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  pin configuration drain-source Datasheet PDF File

For pin configuration drain-source Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    ADM6711 ADM6711LAKS ADM6711MAKS ADM6711RAKS ADM6711SAKS ADM6711TAKS ADM6711ZAKS ADM6713 ADM6713LAKS ADM6713MAKS ADM6713R

Analog Devices, Inc.
AD[Analog Devices]
Part No. ADM6711 ADM6711LAKS ADM6711MAKS ADM6711RAKS ADM6711SAKS ADM6711TAKS ADM6711ZAKS ADM6713 ADM6713LAKS ADM6713MAKS ADM6713RAKS ADM6713SAKS ADM6713TAKS ADM6713ZAKS ADM6711SAKSZ-REEL7 ADM6711LAKS-REEL ADM6711LAKS-REEL7 ADM6711MAKS-REEL ADM6711MAKS-REEL7 ADM6711RAKS-REEL ADM6711RAKS-REEL7 ADM6711SAKS-REEL7 ADM6711TAKS-REEL7 ADM6711TAKSZ-REEL7 ADM6711ZAKS-REEL ADM6711ZAKS-REEL7 ADM6711ZAKSZ-REEL ADM6711ZAKSZ-REEL7 ADM6713LAKS-REEL ADM6713LAKS-REEL7 ADM6713MAKS-REEL ADM6713MAKS-REEL7 ADM6713RAKS-REEL7 ADM6713SAKS-REEL7 ADM6713ZAKS-REEL ADM6713ZAKS-REEL7 ADM6713TAKS-REEL7
Description XSTR, FET BS170TMOS SWITCHING
PHOTO TRANSISTOR, NPN, SILICON; Channels, No. of:1; Output type:Transistor; Current, input:50mA; Voltage, output max:70V; Case style:3-TO-18; Mounting type:Through Hole RoHS Compliant: Yes 微处理器监控电路4引脚SC70
Microprocessor Supervisory Circuit in 4-Lead SC70 微处理器监控电路4引脚SC70
RES 1K-OHM 5% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA
SENSOR, OPTICAL, TRANSISTOR O/P; RoHS Compliant: Yes
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:0.5A; On-Resistance, Rds(on):2mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-92; drain-source Breakdown Voltage:60V RoHS Compliant: No
Microprocessor Supervisory Circuit in 4-Lead SC70, Active-Low Push-Pull Output
Microprocessor Supervisory Circuit in 4-Lead SC70, Active-Low Open-Drain Output

File Size 142.31K  /  8 Page

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    TY Semiconductor Co., Ltd
Part No. KHP45N03LT
Description Low on-state resistance Fast switching. drain-source Voltage VDS 30 V

File Size 193.72K  /  2 Page

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    TY Semiconductor Co., Ltd
Part No. KI1304BDL
Description TrenchFET Power MOSFET 100 Rg Tested drain-source voltage VDS 30 V

File Size 268.56K  /  2 Page

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    Atmel, Corp.
ATMEL[ATMEL Corporation]
Part No. AT17LV002A AT17C002A AT17C002A-10JC AT17C002A-10JI AT17C002A-10QC AT17C002A-10QI AT17C020A AT17LV512A AT17C010A AT17C512A AT17LV002A-10JC AT17LV002A-10JI AT17LV002A-10Q1 AT17LV002A-10QC AT17LV010A AT17LV020A
Description FPGA configuration EEPROM Memory 2M X 1 configuration MEMORY, PQFP32
5015 RR 19#16 pin PLUG 2M X 1 configuration MEMORY, PQCC20

File Size 149.02K  /  14 Page

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    Xilinx, Inc.
XILINX INC
Part No. XQ1701L-SERIES XQR1701L-SERIES XQ1701LCC44M XQR1701LCC44M XQ1701LCC44N XQR1701LCC44N XQ1701LCC44V XQR1701LCC44V 5962-9951401NXB 5962-9951401QYA XQ1701LSO20M XQR1701LSO20M XQ1701LSO20N XQ1701LSO20V XQR1701LSO20N XQR1701LSO20V XQR1701LCCG44M XQ1701L XQR1701L
Description    Cascadable for storing longer or multiple bitstreams
QPro configuration PROM. Radiation-hardened.
QPro configuration PROM. SMD number 5962-9951401NXB.
QPro configuration PROM. SMD number 5962-9951401QYA
QPro Series configuration PROMs (XQ) including Radiation-Hardened Series (XQR) 1M X 1 configuration MEMORY, PDSO20
1M X 1 configuration MEMORY, CQCC44

File Size 87.19K  /  11 Page

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    ST26C32 ST26C32CF16 ST26C32CP16 ST26C32IF16 ST26C32IP16

Exar, Corp.
EXAR[Exar Corporation]
Part No. ST26C32 ST26C32CF16 ST26C32CP16 ST26C32IF16 ST26C32IP16
Description QUAD RS-422, RS-423 CMOS Differential Line Receiver LINE RECEIVER, PDSO16
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:13.4A; On-Resistance, Rds(on):0.0065ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:8-SOIC; Leaded Process Compatible:No

File Size 69.58K  /  8 Page

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    TY Semiconductor Co., Ltd
Part No. KXU05N25
Description VDS (V) = 250V RDS(ON) 1 (VGS = 10V) drain-source Voltage VDSS 250 V

File Size 492.74K  /  2 Page

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    TY Semiconductor Co., Ltd
Part No. KXU03N25
Description VDS (V) = 250V RDS(ON) 2 (VGS = 10V) drain-source Voltage VDSS 250 V

File Size 276.48K  /  2 Page

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    TY Semiconductor Co., Ltd
Part No. 2SK2211
Description Low ON-resistance RDS(ON) High-speed switching Drain to source voltage VDSS 30 V

File Size 111.45K  /  1 Page

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    BUZ900P BUZ901P

Magnatec
Seme LAB
Part No. BUZ900P BUZ901P
Description N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V.
N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V.
N-Channel Power MOSFET For Audio Application(N沟道功率型MOS场效应管(用于音频电路))
N?CHANNEL POWER MOSFET

File Size 38.21K  /  4 Page

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