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ST Microelectronics
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| Part No. |
STRH100N10FSY3
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| OCR Text |
...radiation the st rad-hard power mosf ets are tested to verify the radiation capability. the technology is extremely resistant to assurance well functioning of the device inside the radiation environments. every manufacturing lot is test... |
| Description |
72 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, mosfET, TO-254AA HERMETIC SEALED PACKAGE-3
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| File Size |
213.69K /
13 Page |
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it Online |
Download Datasheet
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ST Microelectronics
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| Part No. |
STRH100N6FSY3 STRH100N6FSY1
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| OCR Text |
...radiation the st rad-hard power mosf ets are tested to verify the radiation capability. the technology is extremely resistant to assurance well functioning of the device inside the radiation environments. every manufacturing lot is test... |
| Description |
80 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, mosfET, TO-254AA HERMETIC SEALED PACKAGE-3
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| File Size |
212.20K /
13 Page |
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it Online |
Download Datasheet
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NXP Semiconductors N.V.
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| Part No. |
PSMN4R1-30YLC
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| OCR Text |
mosf et in lfpak package. this product is designed and qualified for use in a wide ran ge of industrial, communications and domestic equipment. 1.2 features and benefits ? high reliability power so8 package, qualified to 175c ? low paras... |
| Description |
N-channel 30 V 4.35m logic level mosfET in LFPAK using NextPower technology 90 A, 30 V, 0.0057 ohm, N-CHANNEL, Si, POWER, mosfET, MO-235
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| File Size |
305.41K /
15 Page |
View
it Online |
Download Datasheet
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Price and Availability
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