| |
|
 |
IRF[International Rectifier]
|
| Part No. |
IRHNA8160 IRHNA7160
|
| OCR Text |
...te (total dose) environment per mll-STD-750, test method 1019. International Rectifier has imposed a standard gate voltage of 12 volts per note 6 and a VDSS bias condition equal to 80% of the device rated voltage per note 7. Pre- and post-r... |
| Description |
TRANSISTOR N-CHANNEL
|
| File Size |
128.72K /
4 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
IRF[International Rectifier]
|
| Part No. |
IRHNA8064 IRHNA7064
|
| OCR Text |
...te (total dose) environment per mll-STD-750, test method 1019. International Rectifier has imposed a standard gate voltage of 12 volts per note 6 and a VDSS bias condition equal to 80% of the device rated voltage per note 7. Pre- and post-r... |
| Description |
TRANSISTOR N-CHANNEL
|
| File Size |
81.43K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
IRF[International Rectifier]
|
| Part No. |
IRHM7360SE JANSR2N7391
|
| OCR Text |
...te (total dose) environment per mll-STD-750, test method 1019. International Rectifier has imposed a standard gate voltage of 12 volts per note 6 and a VDSS bias condition equal to 80% of the device rated voltage per note 7. Pre- and post-r... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=400V, Rds(on)=0.20ohm, Id=22A)
TRANSISTOR N-CHANNEL(BVdss=400V Rds(on)=0.20ohm Id=22A)
|
| File Size |
90.55K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
IRF[International Rectifier]
|
| Part No. |
IRH7450SE
|
| OCR Text |
...te (total dose) environment per mll-STD-750, test method 1019. International Rectifier has imposed a standard gate voltage of 12 volts per note 6 and a VDSS bias condition equal to 80% of the device rated voltage per note 7. Pre- and post-r... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.51ohm, Id=11A)
TRANSISTOR N-CHANNEL(BVdss=500V Rds(on)=0.51ohm Id=11A)
|
| File Size |
99.29K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
IRF[International Rectifier]
|
| Part No. |
IRHM7360 IRHM8360
|
| OCR Text |
... VGS = 0 during irradiation per mll-STD-750, method 1019, condition A. This test is performed using a flash x-ray source operated in the e-beam mode (energy ~2.5 MeV), 30 nsec pulse. All Pre-Irradiation and Post-Irradiation test condition... |
| Description |
400V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
REPETITIVE AVALANCHE AND dv/dt RATED
400V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
|
| File Size |
318.05K /
12 Page |
View
it Online |
Download Datasheet |
| |
|
|
N.A.
ETC[ETC]
|
| Part No. |
NT7704 NT7704H-TABF4 NT7704H-BDT
|
| OCR Text |
...26 27 28 29 30 31 32
DVV U00 mll M Y
VVVVSEDDDDDDDDXDLEF LMNVNVVVVVD 45SD / I 01234567C I P IR / DCSC54100U R32RRM R S O 3LSDCO KS M RR 1 2 L P Y O F F
1
V1.0
NT7704
Pad Configuration
432 x x 225 x x
433
224
NT7704... |
| Description |
240 Output LCD Segment/Common Driver
|
| File Size |
384.42K /
40 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
