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				Renesas Electronics Corporation
Part No.	HM64YLB36512BP-33 HM64YLB36512BP-28 HM64YLB36512-15
OCR Text	...lb36512 series 16m synchronous late write fast static ram (512-kword 36-bit) rej03c0270-0300 rev.3.00 jan.13.2006 description the hm64ylb36512 is a synchronous fast static ram organized as 512-kword 36-bit. it has realized hig...
Description	512K X 36 late-WRITE SRAM, 1.6 ns, PBGA119 16M Synchronous late Write Fast Static RAM (512-kword × 36-bit)
File Size	370.55K / 33 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	K7D323674C-HC33 K7D323674C-GC33 K7D323674C-GC40 K7D323674C-HC40 K7D323674C-HC37 K7D323674C-GC37 K7D321874C-HC33 K7D321874C-HC37 K7D321874C-HC40 K7D321874C-GC33 K7D321874C-GC37
OCR Text	...er write addresses are asserted(late write), at the rising edge of k clock for single data rate (sdr) write operations and at risi ng and falling edge of k clock for a double data rate (ddr) write operations. data outputs are updated from ...
Description	1Mx36 & 2Mx18 SRAM
File Size	457.49K / 18 Page	View it Online	Download Datasheet

				GSI TECHNOLOGY
Part No.	GS81284Z18B-250V
OCR Text	...te or flow through read/ single late write srams, allow u tilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched fr om read to write cycles. because it is a synchronous de...
Description	8M X 18 ZBT SRAM, 6.5 ns, PBGA119
File Size	508.95K / 29 Page	View it Online	Download Datasheet

				Micron Technology, Inc.
Part No.	MT9LD272
OCR Text	...en low prior to cas# falling. a late write or read-modify-write oc- curs when we# falls after cas# was taken low. during early write cycles, the data-outputs (q) will remain high-z regardless of the state of oe#. during late write or read-m...
Description	2Meg x 72 Buffered DRAM DIMMs(2M x 72缓冲动态RAM模块（双列直插存储器模块 2Meg × 72缓冲内存插槽00万72缓冲动态内存模块（双列直插存储器模块）
File Size	485.22K / 29 Page	View it Online	Download Datasheet

				GSI Technology, Inc.
Part No.	GS8170DD36C-333 GS8170DD36C-250 GS8170DD36C-300 GS8170DD36C-200 GS8170DD36C-250I GS8170DD36C-333I GS8170DD36C-300I GS8170DD36C-200I
OCR Text	...data rate read and write mode ? late write; pipelined read operation ? jedec-standard sigmaram ? pinout and package ? 1.8 v +150/?100 mv core power supply ? 1.8 v cmos interface ? zq controlled user-selectable output drive strength ? dual ...
Description	18Mb x2Lp CMOS I/O Double Data Rate SigmaRAM 512K X 36 STANDARD SRAM, 2.1 ns, PBGA209 18Mb 1x2Lp CMOS I/O Double Data Rate SigmaRAM 35.71x2Lp的CMOS的I / O双数据速率SigmaRAM
File Size	531.69K / 29 Page	View it Online	Download Datasheet

				GSI Technology
Part No.	GS8170DW36 GS8170DW72
OCR Text	late write sigmaram? 200 mhz?333 mhz 1.8 v v dd 1.8 v i/o 209-bump bga commercial temp industrial temp rev: 2.03 1/2005 1/28 ? 2002, gsi technology, inc. specifications cited are subject to change without notice . for latest documentation...
Description	18Mb Common I/O DW SigmaRAMs
File Size	630.67K / 28 Page	View it Online	Download Datasheet

				GSI TECHNOLOGY
Part No.	GS81285Z18GT-300T GS81285Z18T-300I
OCR Text	...or other pipelined read/double late write or flow through read/ single late write srams, allow u tilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched fr om read to write...
Description	8M X 18 ZBT SRAM, 5.5 ns, PQFP100
File Size	468.89K / 24 Page	View it Online	Download Datasheet

				GSI TECHNOLOGY
Part No.	GS81284Z18B-250T
OCR Text	...or other pipelined read/double late write or flow through read/single late write srams, allow utilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched fr om read to write ...
Description	8M X 18 ZBT SRAM, 6.5 ns, PBGA119
File Size	508.44K / 29 Page	View it Online	Download Datasheet

				GSI Technology
Part No.	GS8170DW72A GS8170DW36A
OCR Text	late write sigmaram? 250 mhz?350 mhz 1.8 v v dd 1.8 v i/o 209-bump bga commercial temp industrial temp rev: 1.03 12/2004 1/31 ? 2003, gsi technology specifications cited are subject to change without notice . for latest documentation see ...
Description	18Mb Common I/O DW SigmaRAMs
File Size	611.64K / 31 Page	View it Online	Download Datasheet

				Micron Technology
Part No.	MT4LC4M16N3 MT4LC4M16R6TG-6
OCR Text	...prior to either cas# falling. a late write or read- modify-write occurs when we falls after cas# (casl# or cash#) is taken low. during early write cycles, the data outputs (q) will remain high-z, regardless of the state of oe#. during late ...
Description	DRAM
File Size	468.74K / 24 Page	View it Online	Download Datasheet

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