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  isd-5 Datasheet PDF File

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    IRF5305L IRF5305S

IRF[International Rectifier]
Part No. IRF5305L IRF5305S
OCR Text ...o application note #AN-994. ISD -16A, di/dt -280A/s, VDD V(BR)DSS, 2 www.irf.com IRF5305S/L 1000 TOP VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V 1000 -ID , D rain-to-S ource C urrent (A ) -ID ...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A)
Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 167.31K  /  10 Page

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    IRF5305

IRF[International Rectifier]
Part No. IRF5305
OCR Text ...emperature. ( See fig. 11 ) ISD -16A, di/dt -280A/s, VDD V(BR)DSS, TJ 175C VDD = -25V, starting TJ = 25C, L = 2.1mH RG = 25, I...5.5V - 5.0V BOT TOM - 4.5V TO P 1000 -ID , D rain-to-S ou rc e C urre nt (A ) -ID , D rain-...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 120.44K  /  8 Page

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    IR
Part No. IRFR024NTR
OCR Text ...25, IAS = 10A. (See Figure 12) ISD 10A, di/dt 280A/s, VDD V(BR)DSS, TJ 175C Pulse width 300s; duty cycle 2%. This is applied for...5.5V 5.0V BOTTOM 4.5V TOP 100 I , D rain-to-S ource C urrent (A ) D I , D rain-to-S ource C...
Description 55V Single N-Channel HEXFET Power MOSFET in a D-Pak package

File Size 191.44K  /  11 Page

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    IRFP450APBF

International Rectifier
Part No. IRFP450APBF
OCR Text ...Source Voltage 100 100 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10 I D , Drain Current (A...5 IRFP450APbF EAS , Single Pulse Avalanche Energy (mJ) 15V 1600 TOP BOTTOM VDS L ...
Description HEXFET?Power MOSFET
HEXFET㈢Power MOSFET

File Size 188.24K  /  8 Page

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    IRF530L IRF530NS IRF530NL

International Rectifier
Part No. IRF530L IRF530NS IRF530NL
OCR Text ...IAS = 9.0A. (See Figure 12) ISD 9.0A, di/dt 180A/s, VDD V(BR)DSS, TJ 175C ** When mounted on 1" square PCB ( FR-4 or G-10 Material ...5.5V 5.0V BOTTOM 4.5V TOP 100 I , D rain-to-S ource C urrent (A ) D 10 I , D rain-to-S o...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A)
HEXFET Power MOSFET
Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)

File Size 174.65K  /  10 Page

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    IRF7106 IRF7106TR

IRF[International Rectifier]
Part No. IRF7106 IRF7106TR
OCR Text ...e. ( See fig. 23 ) N-Channel ISD 2.3A, di/dt 100A/s, V DD V(BR)DSS, T J 150C P-Channel ISD -2.3A, di/dt 50A/s, V DD V(BR)DSS, T J ...5.5V 5.0V BOTTOM 4.5V TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 10 4.5V 1...
Description 20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss= -20V)

File Size 157.44K  /  7 Page

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    IRF[International Rectifier]
Part No. IRFP264N IRFP264NPBF
OCR Text ... temperature. (See fig. 11) ISD 25A, di/dt 500A/s, VDD V(BR)DSS, TJ 175C Starting TJ = 25C, L = 1.7mH RG = 25, IAS = 25A,VGS=1...5.5V 5.0V BOTTOM 4.5V TOP 1000 I D , Drain-to-Source Current (A) 100 I D , Drain-to-Sour...
Description 250V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=250V, Rds(on)=60mohm, Id=44A)

File Size 220.56K  /  8 Page

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    IRFP254NPBF

International Rectifier
Part No. IRFP254NPBF
OCR Text ... RG = 25, IAS = 14A,VGS=10V ISD 14A, di/dt 460A/s, VDD V(BR)DSS, TJ 175C max. junction temperature. (See fig. 11) Pulse widt...5.5V 5.0V BOTTOM 4.5V TOP 100 I D , Drain-to-Source Current (A) 10 I D , Drain-to-Source...
Description HEXFET? Power MOSFET
HEXFET㈢ Power MOSFET

File Size 170.81K  /  8 Page

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    IRFD9110PBF

International Rectifier
Part No. IRFD9110PBF
OCR Text ...- * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test + - * Reverse Polarity for P-Channel...5% ISD *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig -14 For P Channel HEXFETS ww...
Description HEXFET POWER MOSFET ( VDSS = -100V , RDS(on) = 1.2Ω , ID = -0.70A )
HEXFET POWER MOSFET ( VDSS = -100V , RDS(on) = 1.2ヘ , ID = -0.70A )

File Size 1,783.03K  /  8 Page

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    IRF840AL IRF840AS IRF840ASTRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840AL IRF840AS IRF840ASTRR
OCR Text ...THIS AREA LIMITED BY RDS(on) ISD , Reverse Drain Current (A) 10us 10 TJ = 150 C I D , Drain Current (A) 10 100us 1ms 1 10ms 1 TJ = 25 C 0.1 0.2 V GS = 0 V 0.5 0.8 1.1 1.4 0.1 TC = 25 C TJ = 150 C Si...
Description TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 8A条(丁)|63AB
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)最大值\u003d 0.85ohm,身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

File Size 125.49K  /  10 Page

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