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SAMSUNG SEMICONDUCTOR CO. LTD.
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Part No. |
KBE00S009M-D411 KBE00S009M-D4110
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OCR Text |
...gining of dat a. even the write-intensive systems can take advantage of the extended reliability of 100k program/erase cy cles by providing ...contact to the memory marketing team in samsung electr onics when considering the use of a product c... |
Description |
1Gb NAND x 2 256Mb Mobile SDRAM x 2 SPECIALTY MEMORY CIRCUIT, PBGA137
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File Size |
1,908.72K /
86 Page |
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it Online |
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Analog Devices, Inc.
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Part No. |
ADSP-21161N-KB-100X
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OCR Text |
... is efficient at executing math intensive dsp algorithms. entering simd mode also has an effect on the way data is transferred between memo...contact analog devices at (781) 461-3881 7 rev. pra data address generators with hardware circular b... |
Description |
48-BIT, 50 MHz, MIXED DSP, PBGA225 17 X 17 MM, METRIC, PLASTIC, BGA-225
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File Size |
757.30K /
76 Page |
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it Online |
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Analog Devices, Inc.
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Part No. |
ADSP-21160MKB-100
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OCR Text |
... is efficient at executing math intensive dsp algorithms. 3 4 reset jtag 6 adsp-2116x bms clock link devices (6 m a x) (optional) cs boot e...contact analog devices at (781) 461-3881 5 rev. pre entering simd mode also has an effect on the way... |
Description |
64-BIT, 100 MHz, OTHER DSP, PBGA400 27 X 27 MM, METRIC, PLASTIC, BGA-400
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File Size |
548.16K /
64 Page |
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it Online |
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Analog Devices, Inc.
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Part No. |
ADSP-21160NCB-TBD ADSP-21160NKB-95 ADSP-21160N
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OCR Text |
...is efficient at executing math-intensive dsp algorithms. entering simd mode also has an effect on the way data is transferred between mem...contact analog devices at 800/262-5643 adsp-21160n april 2002 preliminary technical data with the ad... |
Description |
ADSP-21160N High Performance 32-Bit SHARC DSP DSP Microcomputer 64-BIT, 47.5 MHz, OTHER DSP, PBGA400 Cap-Free, NMOS, 150mA Low Dropout Regulator with Reverse Current Protection 无电容,NMOS管,150mA的低压差稳压器的反向电流保护
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File Size |
547.84K /
53 Page |
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it Online |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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Part No. |
KBE00F005A-D411
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OCR Text |
...gining of data. even the write-intensive systems can take advantage of the extended reliability of 100k program/erase cycles by providing e...contact to the memory marketing team in samsung electronics when considering the use of a product co... |
Description |
512Mb NAND*2 256Mb Mobile SDRAM*2
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File Size |
1,363.49K /
87 Page |
View
it Online |
Download Datasheet
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Price and Availability
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