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Silan Microelectronics
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Part No. |
SVF1N60MJ SVF1N60N
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OCR Text |
...tructure vdmos technology. the improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in th... |
Description |
600V N-CHANNEL MOSFET
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File Size |
535.98K /
11 Page |
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Maxim
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Part No. |
LM4040
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OCR Text |
improved Precision Micropower Shunt Voltage Reference with Multiple Reverse Breakdown Voltages
General Description
The LM4040 is a precision two-terminal shunt mode, bandgap voltage reference available in fixed reverse breakdown voltages ... |
Description |
improved Precision Micropower Shunt Voltage Reference with Multiple Reverse Breakdown Voltages
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File Size |
561.00K /
13 Page |
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ALLEGRO[Allegro MicroSystems]
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Part No. |
A3516EUA A3515LUA A3515EUA A3515 A3516LUA 3515 A3516LUA-TL A3515LUA-TL A3516EUA-TL
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OCR Text |
...Halleffect sensors with greatly improved offset characteristics. Ratiometric, linear Hall-effect sensors provide a voltage output that is proportional to the applied magnetic field and have a quiescent output voltage that is approximately 5... |
Description |
Ratiometric,linear hall-effect sensor for high-temperature operation RATIOMETRIC.LINEAR HALL-EFFECT SENSORS FOR HIGH-TEMPERATURE OPERATION RATIOMETRIC/ LINEAR HALL-EFFECT SENSORS FOR HIGH-TEMPERATURE OPERATION RATIOMETRIC LINEAR HALL-EFFECT SENSORS FOR HIGH-TEMPERATURE OPERATION
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File Size |
197.50K /
12 Page |
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AGILENT TECHNOLOGIES INC
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Part No. |
AMMC-6440-W50
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OCR Text |
...power and gain performance. for improved reliability and moisture protection, the die is passivated at the active areas. note: these devices are esd sensitive. the following precautions are strongly recommended. ensure that an esd approved ... |
Description |
37000 MHz - 42000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
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File Size |
426.59K /
8 Page |
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Price and Availability
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