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VSK2035 CGS114 112VD 10FF682 2SC3576 DG2706 AT875 1200003
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  id-9.4a Datasheet PDF File

For id-9.4a Found Datasheets File :: 3346    Search Time::2.297ms    
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    2SK3520-01MR03

Fuji Electric
Part No. 2SK3520-01MR03
OCR Text ...4 16 18 20 20v 10v 8v 7.5v 7.0v id [a] vds [v] typical output characteristics vgs=6.5v characteristics 2sk3520-01mr fuji power mosfet id=f(vgs):80s pulse test, vds=25v,tch=25c id=f(vds):80s pulse test,tch=25c gfs=f(id):80s pulse test, vds=2...
Description N-CHANNEL SILICON POWER MOSFET

File Size 103.86K  /  4 Page

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    KMA2D4P20S

KEC(Korea Electronics)
Part No. KMA2D4P20S
OCR Text ... MOSFET FEATURES VDSS=-20V, ID=-2.4A. Drain-Source ON Resistance. : RDS(ON)=100m (Max.) @ VGS=-4.5V. A 2 E B 3 : RDS(ON)=175m...9 -0.9 1.0 0.6 150 -55 150 125 /W UNIT V V A A W K SOT-23 Pulsed (Note1) Source-Drain Di...
Description P-Ch Trench MOSFET

File Size 414.30K  /  5 Page

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    KI2351DS

Guangdong Kexin Industrial Co.,Ltd
Part No. KI2351DS
OCR Text ...de Current TC=25 Symbol VDS VGS ID ID IDM IS 5 sec -20 12 -2.8 -2.4 -2.2 -1.8 -10 -2 -0.91 PD PD Tj Tstg 2.1 1.5 1.0 0.7 150 -55 to +150 W W...9 30 32 16 13 14 45 48 24 -2 -10 -0.8 17 5 14 3 -1.2 26 8 5.1 5 mV/ V nA A A VDS =-20V, VGS = ...
Description P-Channel 20-V (D-S) MOSFET

File Size 57.16K  /  2 Page

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    DMC2020USD

Diodes Incorporated
Part No. DMC2020USD
OCR Text ID Max Device V(BR)DSS RDS(on) max TA = 25C (Notes 3 & 5) 20m @ VGS = 4.5V Q1 20V 28m @ VGS = 2.5V 33m @ VGS = -4.5V Q2 -20V 45m @ VGS = -2....9) Diode Forward Voltage (Note 8) Continuous Source Current DYNAMIC CHARACTERISTICS (Note 9) Input C...
Description 20V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

File Size 297.78K  /  11 Page

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    F7207

International Rectifier
Part No. F7207
OCR Text ...Maximum Ratings Parameter VDS ID @ TC = 25C ID @ TC = 70C IDM PD @TC = 25C PD @TC = 70C VGS VGSM EAS dv/dt TJ, TSTG Drain- Source Voltage ...9.6mH RG = 25, IAS = -5.4A. Pulse width 300s; duty cycle 2%. When mounted on 1 inch square c...
Description Search --To IRF7207

File Size 112.29K  /  7 Page

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    FQB7N60 FQI7N60 FQI7N60TU FQB7N60TM

FAIRCHILD[Fairchild Semiconductor]
Part No. FQB7N60 FQI7N60 FQI7N60TU FQB7N60TM
OCR Text ...te Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Cont...9 Notes : 1. VGS = 0 V 2. ID = 250 A 0.5 0.8 -100 -50 0 50 100 o 150 2...
Description    600V N-Channel MOSFET
600V N-Channel QFET

File Size 589.78K  /  9 Page

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    FQP7N60

Fairchild Semiconductor
Part No. FQP7N60
OCR Text ...te Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25C unless otherwise noted Parameter Drain-Source Vo...9 Notes : 1. VGS = 0 V 2. ID = 250 A 0.5 0.8 -100 -50 0 50 100 o 150 2...
Description 600V N-Channel MOSFET

File Size 579.36K  /  8 Page

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    ECH8621R

Sanyo Semicon Device
Part No. ECH8621R
OCR Text ...ge Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm) 1unit Mounted on a ceram...9 0.15 8 5 0 to 0.02 1 2 3 4 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : D...
Description N-Channel Silicon MOSFET General-Purpose Switching Device

File Size 35.35K  /  4 Page

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    AP04N70BP-A

Advanced Power Electronics Corp.
Part No. AP04N70BP-A
OCR Text ...ER MOSFET D BVDSS RDS(ON) ID 650V 2.4 4A G S Description AP04N70 series are specially designed as main switching devices for...9 11 8.3 23.8 8.2 950 65 6 Max. Units 2.4 4 10 100 100 V V/ V S uA uA nA nC nC nC ns ns ns ns pF...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 68.49K  /  6 Page

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    IRF7303 IRF7303TR

International Rectifier
http://
Part No. IRF7303 IRF7303TR
OCR Text ...ute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ, TSTG 10 Sec. Pulsed Drain Current, ...9 3.9 20 2.0 0.016 20 5.0 -55 to + 150 Units A W W/C V V/ns C Thermal Resistance Ratings ...
Description Generation V Technology
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=30V, Rds(on)=0.050ohm)

File Size 107.34K  /  9 Page

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