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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQA10N80_F109 FQA10N80 FQA10N80_06 FQA10N8006
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| OCR Text |
...e Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (...15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top :
Figure 2. Transfer Characteristics
... |
| Description |
800V N-Channel MOSFET
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| File Size |
791.02K /
9 Page |
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HITACHI[Hitachi Semiconductor]
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| Part No. |
2SK3234
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| OCR Text |
...25ns typ (at VGS=10V, VDD=250V, ID=4A) (Qg) Qg=25nC typ (VDD=400V, VGS=10V, ID=8A)
TO-220CFM
D
G
12
3
1. 2. 3.
S
2SK...15 V 2 1 0.5
16
12
8 ID=8A 4 5A 2A 0 2 4 6 8 V GS (V) 10
0.2 0.1 0.1 0.2
0.5 1
2
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| Description |
2SK3234
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| File Size |
131.00K /
9 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQA8N100C
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| OCR Text |
...e Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source vo...15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top :
Figure 2. Transfer Characteristics
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| Description |
1000V N-Channel MOSFET
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| File Size |
690.13K /
8 Page |
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it Online |
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UTC[Unisonic Technologies]
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| Part No. |
1N60A
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| OCR Text |
...25 0.5 Continuous Drain Current ID A TC = 100 0.4 Drain Current-Pulsed (Note 2) IDP 2 A Repetitive(Note 1) EAR 3.6 4.0 mJ Avalanche Energy 5...15 100 20 3 12 11 40 18 8 1.8 4.0 34 32 90 46 10 TYP MAX UNIT V V/ A A A V pF pF pF ns ns ns ns nC ... |
| Description |
0.5 Amps, 600 Volts N-CHANNEL MOSFET
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| File Size |
136.48K /
8 Page |
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it Online |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AOD9N40
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| OCR Text |
...zero gate voltage drain current id=250a, vgs=0v i dss zero gate voltage drain current v ds =400v, v gs =0v i f =8a,di/dt=100a/ s,v ds =10...15 20 25 30 v ds (volts) fig 1: on-region characteristics i d (a) v gs =5.5v 6v 10v 6.5v 0.1 1 10 ... |
| Description |
400V,8A N-Channel MOSFET
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| File Size |
513.61K /
6 Page |
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it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQD45N03L FQD45N03LTF
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| OCR Text |
...ntinuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 4.5V) Continuous (TC = 25oC, VGS = 10V, RJA=52oC) Pulsed PD TJ, TSTG Power ...15 VGS = 5V 10
0.8
0.6
0.4
5 0.2 0 0 25 50 75 100 125 150 25 50 TA , AMBIENT TEMPERATURE... |
| Description |
N-Channel Logic Level PWM Optimized Power MOSFET
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| File Size |
215.60K /
11 Page |
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it Online |
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Price and Availability
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