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halfbridge Datasheet PDF File

For halfbridge Found Datasheets File :: 210 Search Time::7.468ms
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				Powerex Power Semicondu... POWEREX[Powerex Power Semiconductors]
Part No.	CM100DU-24H
OCR Text	...ts of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplifie...
Description	Dual IGBTMOD 100 Amperes/1200 Volts
File Size	57.34K / 4 Page	View it Online	Download Datasheet

				POWEREX[Powerex Power Semiconductors]
Part No.	CM150DU-12F
OCR Text	...ts of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplifie...
Description	Trench Gate Design Dual IGBTMOD?/a> 150 Amperes/600 Volts Trench Gate Design Dual IGBTMOD 150 Amperes/600 Volts Trench Gate Design Dual IGBTMOD⑩ 150 Amperes/600 Volts
File Size	342.75K / 4 Page	View it Online	Download Datasheet

				POWEREX[Powerex Power Semiconductors]
Part No.	CM150DU-12H
OCR Text	...ts of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplifie...
Description	Dual IGBTMOD 150 Amperes/600 Volts
File Size	56.92K / 4 Page	View it Online	Download Datasheet

				POWEREX[Powerex Power Semiconductors]
Part No.	CM150DU-24H
OCR Text	...ts of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplifie...
Description	Dual IGBTMOD 150 Amperes/1200 Volts
File Size	53.32K / 4 Page	View it Online	Download Datasheet

				Powerex Power Semiconductors
Part No.	CM200DU-12F
OCR Text	...ts of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplifie...
Description	Trench Gate Design Dual IGBTMOD 200 Amperes/600 Volts Trench Gate Design Dual IGBTMOD⑩ 200 Amperes/600 Volts
File Size	105.70K / 4 Page	View it Online	Download Datasheet

				Powerex Power Semiconductor... POWEREX[Powerex Power Semiconductors]
Part No.	CM200DU-12H
OCR Text	...ts of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplifie...
Description	Dual IGBTMOD 200 Amperes/600 Volts
File Size	56.85K / 4 Page	View it Online	Download Datasheet

				POWEREX[Powerex Power Semiconductors]
Part No.	CM300DU-24H
OCR Text	...ts of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery freewheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified...
Description	Dual IGBTMOD 300 Amperes/1200 Volts
File Size	59.75K / 4 Page	View it Online	Download Datasheet

				Powerex Power Semiconductor... POWEREX[Powerex Power Semiconductors]
Part No.	CM400DU-12H
OCR Text	...ts of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplifie...
Description	Dual IGBTMOD 400 Amperes/600 Volts
File Size	58.29K / 4 Page	View it Online	Download Datasheet

				Powerex Power Semicondu... POWEREX[Powerex Power Semiconductors]
Part No.	CM400DU-5F
OCR Text	...ts of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplifie...
Description	Trench Gate Design Dual IGBTMOD?/a> 400 Amperes/250 Volts Trench Gate Design Dual IGBTMOD⑩ 400 Amperes/250 Volts Trench Gate Design Dual IGBTMOD 400 Amperes/250 Volts Trench Gate Design Dual IGBTMOD400 Amperes/250 Volts
File Size	65.56K / 4 Page	View it Online	Download Datasheet

				Powerex, Inc. POWEREX[Powerex Power Semiconductors]
Part No.	CM75DU-12H
OCR Text	...ts of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplifie...
Description	Dual IGBTMOD 75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT
File Size	57.14K / 4 Page	View it Online	Download Datasheet

For halfbridge Found Datasheets File :: 210 Search Time::7.468ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |