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hitachi
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| Part No. |
HN62W4416NSERIES 62W4416N
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| OCR Text |
...t DHC t DHO t DHB t CHZ t OHZ t bhz t CLZ t OLZ t BLZ Min 150 50 -- -- -- -- -- 5 0 0 0 -- -- -- 5 5 5 Max -- -- 150 50 150 50 150 -- -- -- -- 50 50 30 -- -- -- Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 1 1 1 Note
1. t CHZ,... |
| Description |
From old datasheet system
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| File Size |
75.62K /
9 Page |
 View
it Online |
Download Datasheet
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SAMSUNG Electronics
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| Part No. |
K1S3216BCC
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| OCR Text |
... lb disable to high-z output t bhz 0 25 0 25 ns output disable to high-z output t ohz 0 25 0 25 ns output hold from address change t oh 3- 3 - ns page cycle t pc 25 - 25 - ns page access time t pa - 20 - 20 ns write write cycle time t wc 7... |
| Description |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory
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| File Size |
186.43K /
10 Page |
View
it Online |
Download Datasheet |
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Samsung Electronic
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| Part No. |
K6T4016V3BK6T4016U3BFAMILY
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| OCR Text |
... lb disable to high-z output t bhz 0 25 0 25 0 30 ns write write cycle time t wc 70 - 85 - 100 - ns chip select to end of write t cw 60 - 70 - 80 - ns address set-up time t as 0 - 0 - 0 - ns address valid to end of write t aw 60 - 70 - 80 ... |
| Description |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM Data Sheet
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| File Size |
147.43K /
9 Page |
View
it Online |
Download Datasheet |
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Samsung Electronic
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| Part No. |
K6F1616R6MFAMILY
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| OCR Text |
... lb disable to high-z output t bhz 0 25 0 25 ns write write cycle time t wc 70 - 85 - ns chip select to end of write t cw1 , t cw2 60 - 70 - ns address set-up time t as 0 - 0 - ns address valid to end of write t aw 60 - 70 - ns write pulse... |
| Description |
1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
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| File Size |
161.34K /
9 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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