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				INFINEON[Infineon Technologies AG] Infineon Technologies A...
Part No.	08090 PTF080901 PTF080901E PTF080901F 8090
OCR Text	960 MHz Description The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz ...0 55 Efficiency 50 45 40 35 30 400 kHz 25 20 600 kHz 36 38 40 42 44 46 48 50 15 10 -10 -20 -30 -40 -...
Description	LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz LDMOS RF Power Field Effect Transistor 90 W 869-960 MHz LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz
File Size	201.97K / 10 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STP6N120K3 STW6N120K3 STFW6N120K3
OCR Text	...related v gs = 0, v ds = 0 to 960 v - 40 - pf c o(er) (2) 2. c oss eq. energy related is defined as a constant equi valent capacitance giving t he same stored energy as c oss when v ds increases from 0 to 80% v dss. equivalent capac...
Description	N-channel 1200 V, 1.95 Ω typ., 6 A SuperMESH3 Power MOSFET in TO-3PF, TO-220 and TO-247 packages N-channel 1200 V, 1.95 Ohm typ., 6 A SuperMESH3 Power MOSFET in TO-3PF, TO-220 and TO-247 packages
File Size	774.08K / 17 Page	View it Online	Download Datasheet

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