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IRF[International Rectifier]
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| Part No. |
IRFI1310G
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| OCR Text |
...kage High Voltage Isolation = 2.5kvrms Sink to Lead Creepage Dist. = 4.8mm Repetitive Avalanche Rated 175C Operating Temperature Description
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to a... |
| Description |
Power MOSFET(Vdss=100V/ Rds(on)=0.04ohm/ Id=22A)
Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=22A)
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| File Size |
319.89K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
IRFIB7N50APBF
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| OCR Text |
...hing High Voltage Isolation = 2.5kvrms Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Effecti... |
| Description |
SMPS MOSFET
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| File Size |
187.20K /
8 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRFIZ48N IRFIZ48 IRFIZ48NPBF
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| OCR Text |
...kage High Voltage Isolation = 2.5kvrms Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated
U
G
VDSS = 55V RDS(on) = 0.016 ID = 36A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced proc... |
| Description |
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=36A)
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| File Size |
107.92K /
8 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRFIZ48V IRFIZ48 IRFIZ48VPBF
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| OCR Text |
...ge l High Voltage Isolation = 2.5kvrms l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description
l l
D
VDSS = 60V RDS(on) = 12m
G S
ID = 39A
Advanced HEXFET(R) Power MOSFETs from International R... |
| Description |
60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=39A)
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| File Size |
92.06K /
8 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRL540N
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| OCR Text |
...kage High Voltage Isolation = 2.5kvrms Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated
VDSS = 100V RDS(on) = 0.044
G S
ID = 30A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced proce... |
| Description |
HEXFET Power MOSFET
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| File Size |
240.97K /
8 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRLI2203 IRLI2203G
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| OCR Text |
...kage High Voltage Isolation = 2.5kvrms Sink to Lead Creepage Dist. = 4.8mm Logic-Level Gate Drive RDS(on) Specified at VGS=5.0V & 10V Description
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques... |
| Description |
Power MOSFET(Vdss=30V, Rds(on)=0.010ohm, Id=52A)
Power MOSFET(Vdss=30V, Rds(on)=0.010ohm, Id=52A?
Power MOSFET(Vdss=30V, Rds(on)=0.010ohm, Id=52A??
Power MOSFET(Vdss=30V, Rds(on)=0.010ohm, Id=52A?)
TERMINAL
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| File Size |
286.77K /
8 Page |
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it Online |
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International Rectifier, Corp.
IRF[International Rectifier]
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| Part No. |
IRLI620G IRLI620
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| OCR Text |
...kage High Voltage Isolation = 2.5kvrms Sink to Lead Creepage Dist. 4.8mm Logic-Level Gate Drive RDS(ON) Specified at VGS = 4V & 5V Fast Switching Ease of paralleling Description
Third Generation HEXFETs from International Rectifier provide... |
| Description |
Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=4.0A) 功率MOSFET（减振钢板基本\u003d 200V的电压，的Rds（on）\u003d 0.80ohm，身份证\u003d 4.0a上）
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| File Size |
295.54K /
8 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRLI640G IRLI640
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| OCR Text |
...kage High Voltage Isolation = 2.5kvrms Sink to Lead Creepage Dist. 4.8mm Logic-Level Gate Drive RDS(ON) Specified at VGS = 4V & 5V Fast Switching Ease of paralleling Description
Third Generation HEXFETs from International Rectifier provide... |
| Description |
Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=9.9A)
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| File Size |
288.15K /
8 Page |
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it Online |
Download Datasheet |
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