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STMicroelectronics
NUMONYX
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| Part No. |
NAND256W4A NAND256W3A NAND256R4A NAND256R3A NAND512W3A M7020 NAND512W3A3DN6T NAND01GW3A2CZA1E NAND512R3A2DN1F NAND512R3A2DN1T NAND512W4A2DN6T
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| OCR Text |
528 Byte, 264 Word Page Family
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 1.8V, 3V Supply Flash Memories
DATA BRIEFING
FEATURES SUMMARY s HIGH DENSITY NAND FLASH MEMORIES - Up to 1 Gbit memory array - Up to 32Mbit spare area - Cost ... |
| Description |
32M X 16 FLASH 3V PROM, 12000 ns, PDSO48
64M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48
128 MBIT, 256 MBIT, 512 MBIT, 1 GBIT (X8/X16) 1.8V, 3V SUPPLY FLASH MEMORIES
64M X 8 FLASH 3V PROM, 12000 ns, PDSO48
128M X 8 FLASH 3V PROM, 12000 ns, PBGA63
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| File Size |
62.74K /
5 Page |
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SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
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| Part No. |
K9F6408U0B-TIB0 K9F6408U0B-TCB0
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| OCR Text |
... program operation programs the 528-byte page in typical 200 m s and an erase operation can be performed in typi- cal 2ms on an 8k-byte block. data in the page can be read out at 50ns cycle time per byte. the i/o pins serve as the ports for... |
| Description |
8M x 8 Bit NAND Flash Memory 8米8位NAND闪存
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| File Size |
418.95K /
27 Page |
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it Online |
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Samsung Electronic
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| Part No. |
K9F5608U0A
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| OCR Text |
... program operation programs the 528- byte page in typical 200 m s and an erase operation can be per- formed in typical 2ms on a 16k-byte block. data in the page can be read out at 50ns cycle time per byte. the i/o pins serve as the ports fo... |
| Description |
32M x 8 Bit NAND Flash Memory Data sheet
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| File Size |
541.31K /
29 Page |
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it Online |
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Samsung Electronics Inc
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| Part No. |
K9F1208U0M-YIB0 K9F1208U0M-YCB0
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| OCR Text |
... successive reading of multiple 528 byte data set at the source planes, the above data are moved to internal page registers and same procedure as Multi-Plane Page Programming is executed. 1.Powerup sequence is added : Recovery time of minim... |
| Description |
EEPROM - Datasheet Reference
From old datasheet system
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| File Size |
522.24K /
40 Page |
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it Online |
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Samsung Electronics Inc
SAMSUNG[Samsung semiconductor]
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| Part No. |
K9S6408V0A-SSB0NBSP K9S6408V0A-SSB0 K9S6408V0A
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| OCR Text |
... Block Erase : (8K + 256)Byte * 528-byte Page Read Operation - Random Access : 7s(Max.) - Serial Page Access : 50ns(Min.) * Fast Write Cycle Time - Program Time : 200s(Typ.) - Block Erase Time : 2ms(Typ.) * Command/Address/Data Multiplexed ... |
| Description |
8M x 8Bit SmartMedia?Card Data sheet
NAND Flash EEPROM
From old datasheet system
8M x 8 Bit SmartMediaTM Card
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| File Size |
345.62K /
26 Page |
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it Online |
Download Datasheet |
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Price and Availability
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