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  5-8 Datasheet PDF File

For 5-8 Found Datasheets File :: 628848    Search Time::6.797ms    
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    TE Connectivity Ltd
Part No. 2-1803001-8
OCR Text ...e apvd dwn description loc dist 5 6 7 8 3 4 2 1 d b a a b c c d by tyco electronics corporation. all rights reserved. released for publication c copyright this drawing is unpublished. amp 4805 rev 31mar2000 restricted to this drawing is a c...
Description SHOULD BE CONTACTED FOR THE LATEST REVISION.

File Size 5,072.22K  /  4 Page

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    POWER-ONE INC
Part No. 20IMX4-1515-8 20IMX4-1515-8K 20IMX4-03-9Z
OCR Text ...y to iec/en 61000-4-2, -3, -4, -5 and -6  high efficiency (typ. 82%) ? flex power: flexible load distribution  no load and short-circuit p...8.5 mm profile safety according to iec/en 60950, ul 1950 1 1 for 70imx4 types description the imx4 s...
Description 2-OUTPUT 4.2 W DC-DC REG PWR SUPPLY MODULE
1-OUTPUT 3 W DC-DC REG PWR SUPPLY MODULE

File Size 175.87K  /  12 Page

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    HM514260CJ-8 HM514260CLJ-7 HM514260CLJ-8 HM514260CTT-7 HM514260CTT-8 HM514260CTT-6 HM514260CTT-6R HM514260C HM51S4260CTT

HITACHI[Hitachi Semiconductor]
Part No. HM514260CJ-8 HM514260CLJ-7 HM514260CLJ-8 HM514260CTT-7 HM514260CTT-8 HM514260CTT-6 HM514260CTT-6R HM514260C HM51S4260CTT-8 HM514260CLJ-6 HM514260CLJ-6R HM514260CLTT-6 HM514260CLTT-6R HM514260CLTT-7 HM514260CLTT-8 HM51S4260C HM51S4260CJ-6 HM51S4260CJ-6R HM51S4260CJ-7 HM51S4260CJ-8 HM51S4260CLJ-6 HM51S4260CLJ-6R HM51S4260CLJ-7 HM51S4260CLJ-8 HM51S4260CLTT-6 HM51S4260CLTT-6R HM51S4260CLTT-7 HM51S4260CLTT-8 HM51S4260CTT-6 HM51S4260CTT-6R HM51S4260CTT-7
OCR Text ...tion. Features * * * Single 5 V (10%) (HM51(S)4260C-6/7/8) (5%) (HM51(S)4260C-6R) High speed -- Access time: 60 ns/70 ns/80 ns (max) Low power dissipation -- Active mode: 825 mW/788 mW/770 mW/688 mW (max) -- Standby mode: 11 mW (max) (H...
Description 80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
262,144-WORD X 16-BIT DYNAMIC RANDOM ACCESS MEMORY
60ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory

File Size 260.25K  /  27 Page

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    VISHAY SEMICONDUCTORS
Part No. MMBZ5239-V-G-8 MMBZ5246-V-G-8 MMBZ5231C-V-G-8 MMBZ5241-V-G-8
OCR Text ...ard zener voltage tolerance is 5 % with a ?b? suffix (e.g.: mmbz5225b-v-g), suffix ?c? is 2 % tolerance ? high temperature soldering guar...8.8 mg packaging codes/options: -18/10k per 13" reel (8 mm tape), 10k/box -08/3k per 7" reel (8 mm t...
Description 9.1 V, 0.225 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
16 V, 0.225 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
DIODE 5.1 V, 0.225 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, GREEN PACKAGE-2, Voltage Regulator Diode
DIODE 11 V, 0.225 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, GREEN PACKAGE-2, Voltage Regulator Diode

File Size 77.37K  /  5 Page

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    HYS64D16000GDL-8-B HYS64D16000GDL-6-B HYS64D16000GDL-7-B HYS64D16001GDL-6-B HYS64D16001GDL-7-B HYS64D32020GDL-8-B HYS64D

INFINEON[Infineon Technologies AG]
Part No. HYS64D16000GDL-8-B HYS64D16000GDL-6-B HYS64D16000GDL-7-B HYS64D16001GDL-6-B HYS64D16001GDL-7-B HYS64D32020GDL-8-B HYS64D32020GDL HYS64D32020GDL-5-B HYS64D32020GDL-6-B HYS64D32020GDL-7-B
OCR Text 5 / 6 / 7 / 8 ] - B H Y S 64 D 1 6 0 0 x G D L - [ 6 / 7 / 8 ] - B 200- Pi n Small Outli ne Dual -In- Line Memor y Modules S O -D I M M DDR SDRAM M e m or y P r o du c t s Never stop thinking. Edition 2003-08 Published by In...
Description DDR SDRAM Modules - 256MB (32Mx64) PC3200 2-bank
DDR SDRAM Modules - 128MB (16Mx64) PC2700 1-bank
DDR SDRAM Modules - 128MB (16Mx64) PC2100 1-bank
DDR SDRAM Modules - 256MB (32Mx64) PC2100 2-bank
200-Pin Small Outline Dual-In-Line Memory Modules

File Size 433.11K  /  31 Page

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    KM4132G271BTQ-8 KM4132G271BTQ_R-8 KM4132G271B KM4132G271BQ_R-10 KM4132G271BQ_R-7 KM4132G271BQ_R-8 KM4132G271BTQ_R-10 KM4

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. KM4132G271BTQ-8 KM4132G271BTQ_R-8 KM4132G271B KM4132G271BQ_R-10 KM4132G271BQ_R-7 KM4132G271BQ_R-8 KM4132G271BTQ_R-10 KM4132G271BTQ_R-7 KM4132G271BTQR-10 KM4132G271BTQR-8 KM4132G271BQR-8 KM4132G271BTQR-7 KM4132G271BQR-10
OCR Text ...ICS. * Changed tSAC from 6 to 6.5 @ 125MHz, tSS from 2 to 2.5 @ 125MHz in AC PARAMETER . * Delete a page including FREQUENCY vs. AC PARAMETE...8 & full page) -. Burst Type (Sequential & Interleave) All inputs are sampled at the positive going ...
Description 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL

File Size 1,032.84K  /  51 Page

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    MCK100-8

SemiWell Semiconductor
Part No. MCK100-8
OCR Text ...Width 1.0 TA =25C, t = 8.3ms 0.5 0.8 10 0.415 2 0.1 1 5.0 - 40 ~ 125 - 40 ~ 150 Parameter Repetitive Peak Off-State Voltage Average On-State Current R.M.S On-State Current Surge On-State Current I2t for Fusing Forward Peak Gate Power D...
Description Sensitive Gate Silicon Controlled Rectifiers

File Size 533.19K  /  5 Page

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    NEC Corp.
NEC[NEC]
Part No. NE8500295-8 NE8500295-6 NE8500295-4 NE85002 NE8500200 NE8500200-RG NE8500200-WB NE8500200-WB-A
OCR Text ...8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped element matching network. NE8500200 is the six-cells recessed gate chip use...
Description 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
C BAND, GaAs, N-CHANNEL, RF POWER, MESFET

File Size 47.52K  /  8 Page

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