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				Renesas Electronics Corporation
Part No.	PD46185092BF1-E40-EQ1 PD46185182BF1-E40-EQ1 PD46185362BF1-E40-EQ1 PD46185362BF1-E33Y-EQ1 PD46185182BF1-E33Y-EQ1 PD46185092BF1-E33Y-EQ1 PD46185182BF1-E40Y-EQ1 PD46185182BF1-E33-EQ1-A PD46185182BF1-E33Y-EQ1-A PD46185182BF1-E40-EQ1-A PD46185182BF1-E40Y-EQ1-A PD46185362BF1-E33-EQ1 PD46185362BF1-E33-EQ1-A PD46185362BF1-E33Y-EQ1-A PD46185362BF1-E40-EQ1-A PD46185362BF1-E40Y-EQ1 PD46185362BF1-E40Y-EQ1-A
OCR Text	...d46185362b is a 524,288-word by 36-bit synchronous quad data rate static ram fabricated with advanced cmos technology using full cmos six-t...512k x 36 3.3ns 300mhz lead-free pd46185362bf1-e40-eq1-a 4.0ns 250mhz pd46185092bf1-e...
Description	18M-BIT QDRTM II SRAM 2-WORD BURST OPERATION
File Size	635.77K / 36 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	PD46184184BF1-E40-EQ1 PD46185084BF1-E40-EQ1 PD46185094BF1-E40-EQ1 PD46185184BF1-E40-EQ1 PD46185364BF1-E40-EQ1 PD46184184BF1-E33Y-EQ1 PD46185364BF1-E33Y-EQ1 PD46185184BF1-E33Y-EQ1 PD46185094BF1-E33Y-EQ1 PD46185084BF1-E33Y-EQ1 PD46185184BF1-E40Y-EQ1 PD46185184BF1-E33-EQ1
OCR Text	...d46185364b is a 524,288-word by 36-bit synchronous quad data rate static ram fabricated with advanced cmos technology using full cmos six-...512k x 36 3.3ns 300mhz pd46185364bf1-e40-eq1-a 4.0ns 250mhz pd46185084bf1-e33y-eq1-a...
Description	18M-BIT DDR II SRAM 4-WORD BURST OPERATION 18M-BIT QDRTM II SRAM 4-WORD BURST OPERATION
File Size	590.41K / 39 Page	View it Online	Download Datasheet

				Cypress Semiconductor
Part No.	CY7C1176V18-333BZXC CY7C1176V18-333BZXI CY7C1165V18 CY7C1165V18-300BZC CY7C1165V18-300BZI CY7C1165V18-300BZXC CY7C1165V18-300BZXI CY7C1165V18-333BZC CY7C1165V18-333BZI CY7C1165V18-333BZXC CY7C1165V18-333BZXI CY7C1161V18-300BZXC CY7C1161V18-333BZXC CY7C1163V18-300BZXC CY7C1163V18-333BZXC CY7C1176V18-300BZXC CY7C1161V18-333BZC CY7C1163V18-333BZC CY7C1176V18-333BZC CY7C1161V18-300BZC CY7C1161V18-300BZI CY7C1161V18-300BZXI CY7C1161V18-333BZI CY7C1163V18-300BZC CY7C1163V18-300BZI CY7C1163V18-300BZXI CY7C1163V18-333BZXI CY7C1163V18-333BZI CY7C1176V18-300BZI CY7C1161V18-333BZXI CY7C1176V18-300BZC CY7C1176V18-300BZXI CY7C1176V18-333BZI
OCR Text	... 18-bit words (CY7C1163V18), or 36-bit words (CY7C1165V18) that burst sequentially into or out of the device. Because data can be transferre...512K x 36 Selection Guide 400 MHz Maximum Operating Frequency Maximum Operating Current 400 1080...
Description	18-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 18-Mbit QDR??II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 18-Mbit QDR?II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
File Size	1,017.48K / 29 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	PD46184182BF1-E40-EQ1 PD46184362BF1-E40-EQ1 PD46184182BF1-E33Y-EQ1 PD46184362BF1-E33Y-EQ1
OCR Text	...d46184362b is a 524,288-word by 36-bit synchronous double data rate static ram fabricated with advanced cmos technology using full cmos six...512k x 36 3.3ns 300mhz bga pd46184362bf1-e40-eq1-a 4.0ns 250mhz (13 x 15) pd46184182bf1...
Description	18M-BIT DDR II SRAM 2-WORD BURST OPERATION
File Size	604.78K / 34 Page	View it Online	Download Datasheet

				GSI Technology
Part No.	GS8160F18BT-7.5
OCR Text	...e 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 5.5 ns-8.5 ns 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O interleave order with the Linear Burst Order (LBO) input. The Burst function need not be used. New addresses can be loaded on...
Description	1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
File Size	547.55K / 22 Page	View it Online	Download Datasheet

				Cypress Semiconductor
Part No.	CY7C1241V18-300BZXC CY7C1256V18 CY7C1256V18-300BZC CY7C1256V18-300BZI CY7C1256V18-300BZXC CY7C1256V18-300BZXI CY7C1241V18-300BZI CY7C1245V18-300BZI CY7C1243V18-300BZI CY7C1243V18-300BZC CY7C1241V18-300BZC CY7C1245V18-300BZC CY7C1245V18-300BZXC CY7C1245V18-300BZXI
OCR Text	36-Mbit QDRTM-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) Features * Separate independent read and write data ports -- Sup...512K x 18 Array 512K x 18 Array 512K x 18 Array 512K x 18 Array K K CLK Gen. Contr...
Description	36-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 36-Mbit QDR??II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 36-Mbit QDR?II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
File Size	1,101.30K / 28 Page	View it Online	Download Datasheet

				MOSEL[Mosel Vitelic, Corp] MOSEL[Mosel Vitelic Corp]
Part No.	V53C816H V53C816H40 V53C816H45 V53C816H50 V53C816H60
OCR Text	...4 15 16 17 18 19 20 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 816H-02 Pin Names A0-A9 RAS Address Inputs, A9 is effec...512K x16 OE WE UCAS LCAS RAS RAS CLOCK GENERATOR CAS CLOCK GENERATOR WE CLOCK GENERATOR ...
Description	512K X 16 FAST PAGE MODE CMOS DYNAMIC RAM
File Size	208.27K / 18 Page	View it Online	Download Datasheet

				MOSEL[Mosel Vitelic Corp] MOSEL[Mosel Vitelic, Corp]
Part No.	V53C818H V53C818H30 V53C818H35 V53C818H40 V53C818H45 V53C818H50
OCR Text	...4 15 16 17 18 19 20 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 818H-02 40/44 Pin Plastic TSOP-II PIN CONFIGURATION Top ...512K x 16 OE WE UCAS LCAS RAS RAS CLOCK GENERATOR CAS CLOCK GENERATOR WE CLOCK GENERATOR ...
Description	HIGH PERFORMANCE 512K X 16 EDO PAGE MODE CMOS DYNAMIC RAM
File Size	229.75K / 18 Page	View it Online	Download Datasheet

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