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  30v s Datasheet PDF File

For 30v s Found Datasheets File :: 28086    Search Time::2.203ms    
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    IRF840A

IRF[International Rectifier]
Part No. IRF840A
OCR Text ..., VGs = 0V, TJ = 125C 100 VGs = 30v nA -100 VGs = -30v Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) ...s VDs = 50V, ID = 4.8A 38 ID = 8.0A 9.0 nC VDs = 400V 18 VGs = 10V, see Fig. 6 and 13 --- VDD = 250...
Description Power MOsFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A)
Power MOsFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A)
Power MOsFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

File Size 87.92K  /  8 Page

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    IRF840LCL IRF840LCS

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840LCL IRF840LCs
OCR Text ...Gate Drive Requirement Enhanced 30v VGs Rating Reduced CIss, COss, CRss Extremely High Frequency Operation Repetitive Avalanche Rated D VDss = 500V G s RDs(on) = 0.85 ID = 8.0A Description This new series of low charge HEXFET(...
Description Power MOsFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOsFET(减振钢板基本\u003d 500V及的Rds(on)\u003d 0.85ohm,身份证\u003d 8.0A
Power MOsFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)

File Size 169.91K  /  10 Page

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    IRF9410

International Rectifier
Part No. IRF9410
OCR Text ... 1 2 A A D D D D VDss = 30v 3 6 4 5 RDs(on) = 0.030 T o p V ie w Recommended upgrade: IRF7403 or IRF7413 Lower pr...s O -8 Absolute Maximum Ratings ( TA = 25C Unless Otherwise Noted) symbol Drain-source Voltage ...
Description Power MOsFET(Vdss=30v, Rds(on)=0.030ohm)

File Size 103.18K  /  7 Page

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    IRF9952

IRF[International Rectifier]
Part No. IRF9952
OCR Text ...O s F E T 1 8 N-Ch P-Ch VDss 30v -30v 2 7 3 6 4 5 P -C H A N N E L M O s F E T RDs(on) 0.10 0.25 T o p V iew Recommended upgrade: IRF7309 or IRF7319 Lower profile/smaller equivalent: IRF7509 Description Fi...
Description Power MOsFET(Vdss= -30v)

File Size 128.20K  /  10 Page

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    IRF9953

IRF[International Rectifier]
Part No. IRF9953
OCR Text ... D1 D1 D2 D2 2 VDss = -30v 3 4 6 5 RDs(on) = 0.25 Description Fifth Generation HEXFETs from International Rectifier...s O -8 Absolute Maximum Ratings ( TA = 25C Unless Otherwise Noted) symbol Drain-source Voltage ...
Description Power MOsFET(Vdss=-30v, Rds(on)=0.25ohm)

File Size 98.36K  /  7 Page

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    IRF9956

IRF[International Rectifier]
Part No. IRF9956
OCR Text ...D1 D1 D2 D2 2 7 VDss = 30v 3 6 4 5 RDs(on) = 0.10 T o p V iew Recommended upgrade: IRF7303 or IRF7313 Lower prof...s O -8 Absolute Maximum Ratings ( TA = 25C Unless Otherwise Noted) symbol Drain-source Voltage ...
Description Power MOsFET(Vdss=30v, Rds(on)=0.10ohm)

File Size 98.88K  /  7 Page

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    IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF9Z14s IRF9Z14L IRF9Z14sTRL IRF9Z14sTRR
OCR Text ..., see Fig. 6 and 13 --- VDD = -30v --- I D = -6.7A ns --- RG = 24 --- RD = 4.0, see Fig. 10 Between lead, nH 7.5 --- and center of die con...s --- --- -5.5 V TJ = 25C, Is = -6.7A, VGs = 0V --- 80 160 ns TJ = 25C, IF = -6.7A --- 96 190 nC di...
Description Power MOsFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) 功率MOsFET(减振钢板基本\u003d- 60V的,的Rds(on)\u003d 0.50ohm,身份证\u003d- 6.7A
Power MOsFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A)
HEXFET? Power MOsFET
-60V single P-Channel HEXFET Power MOsFET in a D2-Pak package

File Size 357.87K  /  10 Page

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    IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL

IRF[International Rectifier]
Part No. IRF9Z24L IRF9Z24s IRF9Z24sTRR IRF9Z24sTRL
OCR Text ...ee Fig. 6 and 13 13 --- VDD = -30v 68 --- ID = -11A ns 15 --- RG = 18 29 --- RD = 2.5, see Fig. 10 Between lead, nH 7.5 --- and center of ...s --- --- -6.3 V TJ = 25C, Is = -11A, VGs = 0V --- 100 200 ns TJ = 25C, IF = -11A --- 320 640 nC di...
Description -60V single P-Channel HEXFET Power MOsFET in a D2-Pak package
Power MOsFET(Vdss=-60V/ Rds(on)=0.28ohm/ Id=-11A)
Power MOsFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)

File Size 307.08K  /  10 Page

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    IRF9Z34L IRF9Z34S IRF9Z34STRL IRF9Z34STRR

IRF[International Rectifier]
Part No. IRF9Z34L IRF9Z34s IRF9Z34sTRL IRF9Z34sTRR
OCR Text ..., see Fig. 6 and 13 --- VDD = -30v --- ID = -18A ns --- RG = 12 --- RD = 1.5, see Fig. 10 Between lead, nH --- and center of die contact -...s --- --- -6.3 V TJ = 25C, Is = -18A, VGs = 0V --- 100 200 ns TJ = 25C, IF = -18A --- 280 520 nC di...
Description -60V single P-Channel HEXFET Power MOsFET in a D2-Pak package
Power MOsFET(Vdss=-60V/ Rds(on)=0.14ohm/ Id=-18A)
Power MOsFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A)

File Size 330.76K  /  10 Page

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For 30v s Found Datasheets File :: 28086    Search Time::2.203ms    
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