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For 256k-byte Found Datasheets File :: 3496    Search Time::1.984ms    
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    Electronic Theatre Controls, Inc.
Part No. IBM0418A81MLAB-4 IBM0418A81MLAB-5 IBM0418A81MLAB-3 IBM0436A81MLAB-3F IBM0436A41MLAB-3F IBM0418A41MLAB-3F IBM0418A81MLAB-3F
OCR Text ...6Kx18) SRAM Features * 8Mb: 256K x 36 or 512K x 18 organizations 4Mb: 128K x 36 or 256K x 18 organizations * 0.25 Micron CMOS technology...Byte Write Capability and Global Write Enable * 7 x 17 Bump Ball Grid Array Package with SRAM JEDEC ...
Description x36 Fast Synchronous SRAM
x18 Fast Synchronous SRAM x18快速同步SRAM

File Size 136.72K  /  25 Page

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    INTEGRATED SILICON SOLUTION INC
Part No. IS61NP25636-100BI
OCR Text ...ear burst sequence is selected. 256k x 32, 256k x 36 and 512k x 18 pipeline 'no wait' state bus sram september 2002 fast access time symbol ...byte write enable we write enable cke clock enable ce , ce2 , ce2 synchronous chip enable oe output...
Description 256K X 36 ZBT SRAM, 5 ns, PBGA119

File Size 125.22K  /  20 Page

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    INTEGRATED SILICON SOLUTION INC
Part No. IS61NP25632-100TQ
OCR Text ...ear burst sequence is selected. 256k x 32, 256k x 36 and 512k x 18 pipeline 'no wait' state bus sram november 2002 fast access time symbol p...byte write enable we write enable cke clock enable ce , ce2 , ce2 synchronous chip enable oe output...
Description 256K X 32 ZBT SRAM, 5 ns, PQFP100

File Size 125.86K  /  20 Page

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    Amphenol, Corp.
Part No. IBM0418A81QLAB-4 IBM0418A81QLAB-3 IBM0418A81QLAB-5 IBM0418A41QLAB-5 IBM0418A41QLAB-3P IBM0418A41QLAB-3F IBM0418A41QLAB-3N IBM0418A41QLAB-4 IBM0436A41QLAB-3F IBM0436A81QLAB-3F
OCR Text ...6Kx18) SRAM Features * 8Mb: 256K x 36 or 512K x 18 organizations 4Mb: 128K x 36 or 256K x 18 organizations * 0.25 Micron CMOS technology...Byte Write Capability and Global Write Enable * 7 x 17 Bump Ball Grid Array Package with SRAM JEDEC ...
Description x36 Fast Synchronous SRAM
x18 Fast Synchronous SRAM x18快速同步SRAM

File Size 145.05K  /  26 Page

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    IBM Microeletronics
Part No. IBM0418A81QLAB IBM0418A41QLAB
OCR Text ...b (128Kx36 & 256Kx18) SRAM * 256K x 36 or 512K x 18 organizations * 128K x 36 or 256K x 18 organizations * 0.25 Micron CMOS technology * ...Byte Write Capability and Global Write Enable * 7 x 17 Bump Ball Grid Array Package with SRAM JEDEC ...
Description 8Mb (512 x 18) SRAM(8M( 512x 18 ) 同步流水线式高性能CMOS静态RAM)
4Mb (256K x 18) SRAM(4M( 256Kx 18) 同步流水线式高性能CMOS静态RAM)

File Size 20.67K  /  5 Page

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    IBM Microeletronics
International Business Machines, Corp.
Part No. IBM0418A8ACLAB IBM0436A4ACLAB
OCR Text ...b (128Kx36 & 256Kx18) SRAM * 256K x 36 or 512K x 18 organizations * 128K x 36 or 256K x 18 organizations * 0.25 Micron CMOS technology * ...Byte Write Capability & Global Write Enable * 7 x 17 Bump Ball Grid Array Package with SRAM JEDEC St...
Description 8Mb( 512K x 18 ) SRAM(8Mb( 512K x 18 )寄存器锁存模式的同步CMOS静态RAM)
4Mb( 128K x 36 ) SRAM(4Mb( 128K x 36 )寄存器锁存模式的同步CMOS静态RAM) 4Mb的(128K的36)的SRAMMb的(128K的36)寄存器锁存模式的同步的CMOS静态RAM)的

File Size 29.76K  /  6 Page

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    Samsung Electronics
Part No. K9F8G08B0M K9F8G08U0M
OCR Text ...(4K + 128)Byte - Block Erase : (256K + 8K)Byte * Page Read Operation - Page Size : (4K + 128)Byte - Random Read : 25s(Max.) - Serial Access : 25ns(Min.) * Fast Write Cycle Time - Page Program time : 200s(Typ.) - Block Erase Time : 1.5ms(Typ...
Description FLASH MEMORY

File Size 1,241.38K  /  54 Page

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    CY64146V CY62146VLL-70ZI CY62146VLL-70BAI

CYPRESS[Cypress Semiconductor]
Part No. CY64146V CY62146VLL-70ZI CY62146VLL-70BAI
OCR Text 256K x 16) Static RAM Features * * * * * * * Wide voltage range: 2.7V-3.6V Ultra-low active, standby power Easy memory expansion with CE a...Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the locat...
Description 4M (256K x 16) Static RAM

File Size 173.74K  /  10 Page

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