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  2-mword Datasheet PDF File

For 2-mword Found Datasheets File :: 210    Search Time::2.359ms    
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    RENESAS[Renesas Electronics Corporation]
Part No. R1RP0404DGE-2PR R1RP0404D R1RP0404DGE-2LR
OCR Text ...sion) * Data retention voltage: 2.0 V (min) (L-version) * Center VCC and VSS type pin out Rev.1.00, Mar.12.2004, page 1 of 11 R1RP0404D Series Ordering Information Type No. R1RP0404DGE-2PR R1RP0404DGE-2LR Access time 12 ns 12 ns P...
Description Memory>Fast SRAM>Asynchronous SRAM
4M High Speed SRAM (1-Mword 】 4-bit)
4M High Speed SRAM (1-Mword × 4-bit)

File Size 77.96K  /  13 Page

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    RENESAS[Renesas Electronics Corporation]
Part No. R1RW0404DGE-2PR R1RW0404D R1RW0404DGE-2LR REJ03C0115-0100Z
OCR Text ...sion) * Data retention voltage: 2 V (min) (L-version) * Center VCC and VSS type pin out Rev.1.00, Mar.12.2004, page 1 of 11 R1RW0404D Series Ordering Information Type No. R1RW0404DGE-2PR R1RW0404DGE-2LR Access time 12 ns 12 ns Pac...
Description Memory>Fast SRAM>Asynchronous SRAM
4M HIGH SPEED SRAM (1-MWORD X 4-BIT)

File Size 77.35K  /  13 Page

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    HM621400H HM621400HJP-10 HM621400HJP-12 HM621400HJP-15 HM621400HLJP-10 HM621400HLJP-12 HM621400HLJP-15

Hitachi Semiconductor
Part No. HM621400H HM621400HJP-10 HM621400HJP-12 HM621400HJP-15 HM621400HLJP-10 HM621400HLJP-12 HM621400HLJP-15
OCR Text ...ng CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology. It is most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in system...
Description 4M High Speed SRAM (4-Mword x 1-bit)

File Size 64.11K  /  13 Page

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    HM64YGB36100BP-33 HM64YGB36100

Renesas Electronics Corporation
Part No. HM64YGB36100BP-33 HM64YGB36100
OCR Text ...ures * * * * * * * * * * * * * 2.5 V 5% operation and 1.5 V (VDDQ) 32-Mbit density Synchronous register to register operation Internal self-timed late write Byte write control (4 byte write selects, one for each 9-bit) Optional x18 config...
Description 32M Synchronous Late Write Fast Static RAM (1-Mword 】 36-bit)

File Size 200.07K  /  21 Page

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    R1LV1616HBG-4SI R1LV1616HBG-5SI R1LV1616HBG-I

Renesas Electronics Corporation.
Part No. R1LV1616HBG-4SI R1LV1616HBG-5SI R1LV1616HBG-I
OCR Text ...eatures * Single 3.0 V supply: 2.7 V to 3.6 V * Fast access time: 45/55 ns (max) * Power dissipation: Active: 9 mW/MHz (typ) Standby: 1.5 W (typ) * Completely static memory. No clock or timing strobe required * Equal access and cycle ti...
Description Wide Temperature Range Version 16 M SRAM (1-Mword 16-bit)
Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit)
Wide Temperature Range Version 16 M SRAM (1-Mword × 16-bit)

File Size 112.71K  /  15 Page

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    HM5216805 HM5216805LTT-10H HM5216805TT-10H HM5216805TT-12 HM5216405LTT-10H HM5216405 HM5216405TT-10H HM5216405TT-12

Hitachi Semiconductor
Part No. HM5216805 HM5216805LTT-10H HM5216805TT-10H HM5216805TT-12 HM5216405LTT-10H HM5216405 HM5216405TT-10H HM5216405TT-12
OCR Text 2-bank/2-mword x 4-bit x 2-bank ADE-203-304E (Z) Rev. 5.0 November 1, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5216805 Series, HM5216405 Series are offered in 2 banks for improved...
Description 16 M LVTTL Interface SDRAM 100 MHz/83 MHz 1-Mword ? 8-bit ? 2-bank/2-mword ? 4-bit ? 2-bank

File Size 569.39K  /  60 Page

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    HM62A16100I HM62A16100LBPI-7 HM62A16100LBPI-7SL

Renesas Electronics Corporation
Part No. HM62A16100I HM62A16100LBPI-7 HM62A16100LBPI-7SL
OCR Text ... Single 1.8 V supply: 1.65 V to 2.2 V * Fast access time: 70 ns (max) * Power dissipation: Active: 3.6 mW/MHz (typ) Standby: 0.9 W (typ) * Completely static memory. No clock or timing strobe required * Equal access and cycle times * Comm...
Description Wide Temperature Range Version 16 M SRAM (1-Mword × 16-bit)
Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit)
Memory>Low Power SRAM

File Size 132.39K  /  17 Page

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    HM624100HC HM624100HCJP-10 HM624100HCLJP-10

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. HM624100HC HM624100HCJP-10 HM624100HCLJP-10
OCR Text ...andby ccurrent : 5 mA (max) : 1.2 mA (max) (L-version) * Data retension current : 0.8 mA (max) (L-version) * Data retension voltage : 2.0 V (min) (L-version) * Center VCC and VSS type pinout Preliminary: The specification of this device ...
Description 4M High Speed SRAM (1-Mword x 4-bit)

File Size 63.65K  /  14 Page

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    HB52F649EN-75B HB52F648EN-75B

Elpida Memory
Part No. HB52F649EN-75B HB52F648EN-75B
OCR Text 2-Bank Module (16 pcs of 32 M x 8 Components) (HB52F649EN) 64-Mword x 72-bit, 2-Bank Module (18 pcs of 32 M x 8 Components) PC133 SDRAM E0012H10 (1st edition) (Previous ADE-203-1115A (Z)) Preliminary Jan. 17, 2001 Description The HB52F6...
Description 512 MB Unbuffered SDRAM DIMM, 133 MHz Memory Bus PC133 SDRAM

File Size 192.54K  /  28 Page

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For 2-mword Found Datasheets File :: 210    Search Time::2.359ms    
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