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  2 097 152 Datasheet PDF File

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    K4S281632C K4S281632C-TI K4S281632C-TI1H K4S281632C-TI1L K4S281632C-TI75 K4S281632C-TP K4S281632C-TP1H K4S281632C-TP1L K

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
Part No. K4S281632C K4S281632C-TI K4S281632C-TI1H K4S281632C-TI1L K4S281632C-TI75 K4S281632C-TP K4S281632C-TP1H K4S281632C-TP1L K4S281632C-TP75
OCR Text ...ss key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) * All inputs are sam...097,152 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous des...
Description 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
CONNECTOR ACCESSORY 连接器附

File Size 46.28K  /  9 Page

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    K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632D-L55 K4S281632D-L60 K4S281632D-L75 K4S281632D-L7C K4S281632D-NC1H K4S

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632D-L55 K4S281632D-L60 K4S281632D-L75 K4S281632D-L7C K4S281632D-NC1H K4S281632D-NC60 K4S281632D-NC75 K4S281632D-NC7C K4S281632D-NL1H K4S281632D-NL60 K4S281632D-NL75 K4S281632D-NL7C K4S281632D-TC K4S281632D-TC_L60 K4S281632D-TC75 K4S281632D-TL75 K4S281632D-TC_L1H K4S281632D-TC_L1L K4S281632D-TC_L55 K4S281632D-TC_L75 K4S281632D-TC_L7C K4S281632D-TC/L1H K4S281632D-TC/L1L K4S281632D-TC/L55 K4S281632D-TC/L60 K4S281632D-TC/L75 K4S281632D-TC/L7C K4S281632D-TL60 K4S281632D-TC7C K4S281632D-TL55 K4S281632D-TL7C
OCR Text ...ss key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) * All inputs are sam...097,152 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous des...
Description 128Mb SDRAM, 3.3V, LVTTL, 133MHz
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187
; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No
128Mb SDRAM, 3.3V, LVTTL, 166MHz
128Mb SDRAM, 3.3V, LVTTL, 183MHz

File Size 110.59K  /  11 Page

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    K4S281633D-N1H K4S281633D-N1L K4S281633D-N75 K4S281633D-RL

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S281633D-N1H K4S281633D-N1L K4S281633D-N75 K4S281633D-RL
OCR Text ...DC Current value. Revision 0.2 (June 20. 2001, Target) * Changed device name from low power sdram to mobile dram. Revision 0.3 (Augus...097,152 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous des...
Description IC REG ULDO DUAL 2.8/1.5V 6-MLF
8Mx16 SDRAM 54CSP
2M x 16Bit x 4 Banks SDRAM in 54CSP Data Sheet

File Size 66.22K  /  10 Page

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    K4S640832C K4S640832C-TC_L1L K4S640832C-TC_L70 K4S640832C-TC_L80 K4S640832C-TC_L1H K4S640832C-TC_L10 K4S640832C-TC/L10 K

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S640832C K4S640832C-TC_L1L K4S640832C-TC_L70 K4S640832C-TC_L80 K4S640832C-TC_L1H K4S640832C-TC_L10 K4S640832C-TC/L10 K4S640832C-TC/L1H K4S640832C-TC/L1L K4S640832C-TC/L70 K4S640832C-TC/L80
OCR Text ...ss key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampl...097,152 words by 8 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous desi...
Description 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL

File Size 128.76K  /  11 Page

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    K4S640832D K4S640832D-TC_L10 K4S640832D-TC_L1H K4S640832D-TC_L1L K4S640832D-TC_L80 K4S640832D-TC_L75 K4S640832D-TC/L10 K

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S640832D K4S640832D-TC_L10 K4S640832D-TC_L1H K4S640832D-TC_L1L K4S640832D-TC_L80 K4S640832D-TC_L75 K4S640832D-TC/L10 K4S640832D-TC/L1H K4S640832D-TC/L1L K4S640832D-TC/L75 K4S640832D-TC/L80
OCR Text ...ss key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampl...097,152 words by 8 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous desi...
Description 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL

File Size 127.15K  /  10 Page

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    P6SMB22A P6SMB18A P6SMB30A P6SMB33A P6SMB36A P6SMB39A P6SMB150A P6SMB15A P6SMB75A P6SMB200A P6SMB20A P6SMB8.2A P6SMB82A

CENTRAL[Central Semiconductor Corp]
Part No. P6SMB22A P6SMB18A P6SMB30A P6SMB33A P6SMB36A P6SMB39A P6SMB150A P6SMB15A P6SMB75A P6SMB200A P6SMB20A P6SMB8.2A P6SMB82A P6SMB130A P6SMB13A P6SMB110A P6SMB9.1A P6SMB91A P6SMB51A P6SMB56A P6SMB170A P6SMB7.5A P6SMB12A P6SMB120A P6SMB10A P6SMB100A P6SMB43A P6SMB6.8A P6SMB62A P6SMB47A P6SMB68A P6SMB11A P6SMB160A P6SMB16A P6SMB180A P6SMB24A P6SMB27A
OCR Text ...8.65 9.5 10.5 11.4 12.4 14.3 15.2 17.1 19.0 NOM 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 MAX 7.14 7.88 8.61 9.55 10.5 11.6 12.6 13.7 15.8 16....097 0.098 0.099 0.100 0.101 0.101 0.102 0.103 0.104 0.104 0.105 0.105 0.106 0.106 0.107 0.107 0.107 ...
Description UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 600 WATTS 6.8 THRU 200 VOLTS
UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 600 WATTS, 6.8 THRU 200 VOLTS

File Size 91.54K  /  2 Page

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    W981216BH W981216 W981216BH-75 W981216BH-75I W981216BH-75L W981216BH-6

Winbond Electronics Corp
WINBOND[Winbond]
Part No. W981216BH W981216 W981216BH-75 W981216BH-75I W981216BH-75L W981216BH-6
OCR Text ...ccessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automaticall...097,152 Words x 4 banks x 16 bits organization * Auto Refresh and Self Refresh * CAS Latency: 2 and ...
Description 2M x 4 Banks x 16 Bit SDRAM
Low Power SDRAM
Industrial SDRAM
2M x 4 BANKS x 16 BIT SDRAM
DRAM - Datasheet Reference

File Size 1,313.72K  /  41 Page

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    W981216 W981216AH W981216AH-8H W981216A

WINBOND[Winbond]
Part No. W981216 W981216AH W981216AH-8H W981216A
OCR Text 2,097,152 words x 4 banks x 16 bits organization Auto Refresh and Self Refresh CAS latency: 2 and 3 Burst Length: 1, 2, 4, 8 , and full page Burst read, Single Writes Mode Byte data controlled by UDQM and LDQM Power-Down Mode Auto-Precharge...
Description From old datasheet system
x16SDRAM
2M x 16 bit x 4 Banks SDRAM

File Size 2,163.19K  /  44 Page

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    AM27X020 AM27X020-120JC AM27X020-120JI AM27X020-120PC AM27X020-120PI AM27X020-150JC AM27X020-150JI AM27X020-150PC AM27X0

AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
PROM
ADVANCED MICRO DEVICES INC
Part No. AM27X020 AM27X020-120JC AM27X020-120JI AM27X020-120PC AM27X020-120PI AM27X020-150JC AM27X020-150JI AM27X020-150PC AM27X020-150PI AM27X020-200JC AM27X020-200JI AM27X020-200PC AM27X020-200PI AM27X020-255JC AM27X020-255JI AM27X020-255PC AM27X020-255PI AM27X020-75JC AM27X020-75JI AM27X020-75PC AM27X020-75PI AM27X020-90JC AM27X020-90JI AM27X020-90PC AM27X020-90PI AM27X024-75JC AM27X024-75JI
OCR Text 2 Megabit (256 K x 8-Bit) CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS s As an OTP EPROM alternative: -- Factory optimized programmi...097,152 Bit Cell Matrix 15652D-1 Publication# 15652 Rev: D Amendment/0 Issue Date: May 1998 PRO...
Description 2 megabit (256K x 8-bit ) CMOS EPROM device
2 Megabit (256 K x 8-Bit) CMOS ExpressROM Device
CMOS Dual 2-Wide 2-Input AND-OR-INVERT Gate 14-TSSOP -55 to 125
CMOS Dual 2-Wide 2-Input AND-OR-INVERT Gate 14-CDIP -55 to 125
CMOS Expandable 4-Wide 2-Input AND-OR-INVERT Gate 14-PDIP -55 to 125
CMOS Expandable 4-Wide 2-Input AND-OR-INVERT Gate 14-SOIC -55 to 125 256K X 8 OTPROM, 90 ns, PQCC32

File Size 71.30K  /  10 Page

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    AM27X2048 AM27X2048-120JC AM27X2048-120JI AM27X2048-120PC AM27X2048-120PI AM27X2048-150JC AM27X2048-150JI AM27X2048-150P

ADVANCED MICRO DEVICES INC
PROM
Advanced Micro Devices, Inc.
AMD[Advanced Micro Devices]
Part No. AM27X2048 AM27X2048-120JC AM27X2048-120JI AM27X2048-120PC AM27X2048-120PI AM27X2048-150JC AM27X2048-150JI AM27X2048-150PC AM27X2048-150PI AM27X2048-200JC AM27X2048-200JI AM27X2048-200PC AM27X2048-200PI AM27X2048-255JC AM27X2048-255JI AM27X2048-255PC AM27X2048-255PI AM27X2048-70JC AM27X2048-70JI AM27X2048-70PC AM27X2048-70PI AM27X2048-90JC AM27X2048-90JI AM27X2048-90PC AM27X2048-90PI
OCR Text 2 Megabit (128 K x 16-Bit) CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS s As an OTP EPROM alternative: -- Factory optimized programm...097,152 Bit Cell Matrix 15653D-1 Publication# 15653 Rev: D Amendment/0 Issue Date: May 1998 PRO...
Description 2 Megabit (128 K x 16-Bit) CMOS ExpressROM Device 128K X 16 MASK PROM, 70 ns, PQCC44
2 Megabit (128 K x 16-Bit) CMOS ExpressROM Device 128K X 16 MASK PROM, 90 ns, PQCC44
2 Megabit (128 K x 16-Bit) CMOS ExpressROM Device 128K X 16 MASK PROM, 90 ns, PDIP40
2 Megabit (128 K x 16-Bit) CMOS ExpressROM Device 128K X 16 MASK PROM, 70 ns, PDIP40

File Size 71.86K  /  10 Page

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