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  170.60 Datasheet PDF File

For 170.60 Found Datasheets File :: 34984    Search Time::1.031ms    
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    IRF5305L IRF5305S

IRF[International Rectifier]
Part No. IRF5305L IRF5305S
OCR Text ... 110 ns TJ = 25C, IF = -16A --- 170 250 nC di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: ...60 -40 -20 0 20 40 60 80 V G S = -1 0V 100 120 140 160 180 A -V G S , G ate -to-Source V...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A)
Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

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    IRF5305

IRF[International Rectifier]
Part No. IRF5305
OCR Text ... --- --- --- --- --- --- --- 71 170 -31 A -110 -1.3 110 250 V ns nC Conditions D MOSFET symbol showing the G integral reverse p-n junctio...60 -40 -20 0 20 40 60 80 V G S = -10 V 100 120 140 160 180 A -V G S , G ate -to-Source V...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 120.44K  /  8 Page

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    IRF840LCL IRF840LCS

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840LCL IRF840LCS
OCR Text ...f die contact 1100 --- VGS = 0V 170 --- pF VDS = 25V 18 --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS I SM V...60 (.06 3) 1 .50 (.05 9) 0 .3 68 (.0 1 4 5 ) 0 .3 42 (.0 1 3 5 ) F E E D D IRE CTIO N 1 .8 5 (.0 ...
Description Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)\u003d 0.85ohm,身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)

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    IRF9140

SEMELAB LTD
SEME-LAB[Seme LAB]
Part No. IRF9140
OCR Text ...3 35.2 35 85 85 65 -18 -72 -4.2 170 Negligible 5.0 13 1.0 0.12 30 280 3.6 V / C V S (E) A nA -2 6.2 pF nC ns SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current 2 IS = -18A TJ = 25C Diode F...
Description P-CHANNEL POWER MOSFET

File Size 21.26K  /  2 Page

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    IRF9530NL IRF9530NS IRF9530NSTRR

IRF[International Rectifier]
Part No. IRF9530NL IRF9530NS IRF9530NSTRR
OCR Text ...--- --- 15 58 45 46 7.5 760 260 170 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 0.20 VGS = -10V, I...60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 180 -VG S , Ga te -to-Source Volta ge (V)...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.20ohm/ Id=-14A)
Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

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    IRF9530N

IRF[International Rectifier]
Part No. IRF9530N
OCR Text ...--- 15 58 45 46 4.5 7.5 760 260 170 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 0.20 VGS = -10V...60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 180 -VG S , Ga te -to-Source Volta ge (V)...
Description Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

File Size 109.25K  /  8 Page

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    IRF9540 RF1S9540SM FN2282

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. IRF9540 RF1S9540SM FN2282
OCR Text ...= 19A, dISD/dt = 100A/s - 170 0.8 -1.5 - V ns C 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse...60 -40 VGS = -9V VGS = -8V -20 VGS = -5V 0 0 -10 -20 VGS = -7V VGS = -6V -30 VGS = -4V -40 -50 ...
Description 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
19A/ 100V/ 0.200 Ohm/ P-Channel Power MOSFETs
From old datasheet system

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    IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR
OCR Text ...of die contact 270 --- VGS = 0V 170 --- pF VDS = -25V 31 --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM V...60 9 ) 15 .2 2 (.60 1 ) 2 4 .30 (.9 5 7) 2 3 .90 (.9 4 1) TR L 1 0. 90 (.4 29 ) 1 0. 70 (.4 2...
Description Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) 功率MOSFET(减振钢板基本\u003d- 60V的,的Rds(on)\u003d 0.50ohm,身份证\u003d- 6.7A
Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A)
HEXFET? Power MOSFET
-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 357.87K  /  10 Page

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    IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL
OCR Text ...of die contact 350 --- VGS = 0V 170 --- pF VDS = -25V 92 --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM V...60 -40 -20 0 20 40 60 80 VG S = -1 0V 100 120 140 160 180 A -VG S , Ga te -to-Source Vol...
Description -60V Single P-Channel HEXFET Power MOSFET in a TO-262 package
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.175ohm,身份证\u003d- 12A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.175ohm/ Id=-12A)

File Size 167.05K  /  10 Page

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    IRF9Z24N IRF9Z24NPBF

IRF[International Rectifier]
Part No. IRF9Z24N IRF9Z24NPBF
OCR Text ...--- --- 13 55 23 37 4.5 7.5 350 170 92 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, I D = -1mA 0.175 VGS =...60 -40 -20 0 20 40 60 80 VG S = -10 V 100 120 140 160 180 A -VG S , Ga te-to-S o urce V ...
Description -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)

File Size 105.16K  /  8 Page

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