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  17.5mhz Datasheet PDF File

For 17.5mhz Found Datasheets File :: 419    Search Time::1.703ms    
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    RA08N1317M10 RA08N1317M-101

Mitsubishi Electric Semiconductor
Part No. RA08N1317M10 RA08N1317M-101
OCR Text 175mhz 8w 9.6v, 2 stage amp. for portable radio ra08n1317m 30 jun 2010 1/9 electrostatic sensitive device observe handling precautions description the ra08n1317m is a 8-watt rf mosfet amplifier modu le for 9.6-volt portable ...
Description 135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO
135 MHz - 175 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER

File Size 143.09K  /  9 Page

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    RD06HVF1 RD06HVF110

Mitsubishi Electric Semiconductor
Part No. RD06HVF1 RD06HVF110
OCR Text 175mhz,6w rd06hvf1 6 jul 2010 1/9 electrostatic sensitive device observe handling precautions description rd06hvf1 is a mos fet type transistor specifically designed for vhf rf power amplifiers applications. features ...
Description RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W

File Size 341.28K  /  9 Page

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    RA30H1317M RA30H1317M-01 RA30H1317M-E01

Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. RA30H1317M RA30H1317M-01 RA30H1317M-E01
OCR Text 175MHz 30W 12.5V MOBILE RADIO BLOCK DIAGRAM 2 3 DESCRIPTION The RA30H1317M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain...
Description 135-175MHz 30W 12.5V MOBILE RADIO

File Size 63.63K  /  9 Page

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    RA08N1317M RA08N1317M-01 RA08N1317M-E01

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. RA08N1317M RA08N1317M-01 RA08N1317M-E01
OCR Text 175MHz 8W 9.6V PORTABLE RADIO BLOCK DIAGRAM 2 3 DESCRIPTION The RA08N1317M is a 8-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain...
Description Anti-Static Storage Bags; External Height:6"; External Width:4"; Features:Zipper closure, amine-free, noncorrosive; Material:Vapor-Coated Alum. Shield Bonded between Polyester Outer & Polyethylene Inner Layers RoHS Compliant: NA
Anti-Static Storage Bags; External Height:10"; External Width:6"; Features:Zipper closure, Amine-free, noncorrosive; Material:Vapor-Coated Alum. Shield Bonded between Polyester Outer & Polyethylene Inner Layers RoHS Compliant: NA
135-175MHz 8W 9.6V PORTABLE RADIO

File Size 61.86K  /  9 Page

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    MRF148A MRF148A-15

M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
Part No. MRF148A MRF148A-15
OCR Text 175mhz, 50v m/a-com products released - rev. 062907 mrf148a ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.84...
Description Linear RF Power FET 30W, to 175MHz, 50V

File Size 277.24K  /  7 Page

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    MAX12554 MAX12555 MAX12555ETL MAX19538 MAX1206 MAX1207 MAX1208 MAX1209 MAX1211 MAX12553

MAXIM[Maxim Integrated Products]
Part No. MAX12554 MAX12555 MAX12555ETL MAX19538 MAX1206 MAX1207 MAX1208 MAX1209 MAX1211 MAX12553
OCR Text ...74.2dB/72.1dB SNR at fIN = 3MHz/175MHz 88.4dBc/74.7dBc SFDR at fIN = 3MHz/175MHz Low Noise Floor: 74.7dBFS 3.3V Low-Power Operation 465mW (Single-Ended Clock Mode) 497mW (Differential Clock Mode) 300W (Power-Down Mode) Fully Differential...
Description 14-Bit, 95Msps, 3.3V ADC

File Size 759.37K  /  28 Page

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    Maxim
Part No. MAX12554
OCR Text ...72.4dB/70.9dB SNR at fIN = 3MHz/175MHz 86.2dBc/82.5dBc SFDR at fIN = 3MHz/175MHz Low Noise Floor: -74.8dBFS 3.3V Low-Power Operation 396mW (Single-Ended Clock Mode) 429mW (Differential Clock Mode) 300W (Power-Down Mode) Fully Differentia...
Description 14-Bit, 80Msps, 3.3V ADC
From old datasheet system

File Size 1,004.32K  /  28 Page

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    MRF141G

M/A-COM Technology Solutions, Inc.
Part No. MRF141G
OCR Text 175mhz, 28v m/a-com products released - rev. 3 mrf141g ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.829...
Description RF Power FET 300W, 175MHz, 28V

File Size 424.79K  /  11 Page

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    Mitsubishi Electric
Part No. RD07MVS1
OCR Text ...Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION RD07MVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 1 4.9+/...
Description Silicon MOSFET Power Transistor

File Size 241.52K  /  8 Page

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    VRF151

Advanced Power Technology
Part No. VRF151
OCR Text ... 150w with 14db typical gain @ 175mhz, 50v 150w with 22db typical gain @ 30mhz, 50v excellent stability & low imd common source configuration 30:1 load vswr capability at specified operating conditions nitride pa...
Description N-CHANNEL RF POWER VERTICAL MOSFET

File Size 207.43K  /  5 Page

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For 17.5mhz Found Datasheets File :: 419    Search Time::1.703ms    
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