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  12.8w Datasheet PDF File

For 12.8w Found Datasheets File :: 2190    Search Time::1.656ms    
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    NTE195A

NTE[NTE Electronics]
Part No. NTE195A
OCR Text ...circuits. Features: D Specified 12.5V, 28MHz Characteristic: Power Output = 3.5W Power Gain = 10dB Efficiency = 70% Typical Absolute Maximum...8W Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Description Silicon NPN Transistor RF Power Amp/Driver, CB

File Size 23.19K  /  2 Page

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    NTE291 NTE292

NTE[NTE Electronics]
Part No. NTE291 NTE292
OCR Text ... .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base .100 (2.54) Emitter Collector/Tab
Description Silicon Complementary Transistors Medium Power Amp, Switch

File Size 23.36K  /  2 Page

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    NTE472

NTE Electronics, Inc.
NTE[NTE Electronics]
Part No. NTE472
OCR Text ...quipment. Features: D Specified 12.5 Volt, 175MHz Characteristics: Output Power = 1.75 Watts Minimum Gain = 11.5dB Efficiency = 50% D Characterized through 225MHz Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . ....
Description Silicon NPN Transistor RF Power Output PO = 1.8W @ 175MHz

File Size 21.23K  /  2 Page

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    TCC598 SD1448 2806

STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. TCC598 SD1448 2806
OCR Text ...2.5mm Internal Diameter : 10 to 12 Turns on R6, Wire Diameter 0.5mm PC Board Material : Er = 2.5, .020" Thick 4/6 SD1448 (TCC598) TEST CIRCUIT LAYOUT 5/6 SD1448 (TCC598) PACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0122 In...
Description From old datasheet system
RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS

File Size 70.02K  /  6 Page

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    IRF7103 IRF7103TR IRF7103N

International Rectifier
Part No. IRF7103 IRF7103TR IRF7103N
OCR Text ...11 0.16 --- 3.8 --- --- --- --- 12 1.2 3.5 9.0 8.0 45 25 4.0 6.0 290 140 37 Max. Units Conditions --- V V GS = 0V, I D = 250A --- V/C Reference to 25C, I D = 1mA 0.13 VGS = 10V, I D = 3.0A 0.20 VGS = 4.5V, ID = 1.5A 3.0 V VDS = VGS , ...
Description Power MOSFET(Vdss=50V/ Rds(on)=0.130ohm/ Id=3.0A)
Power MOSFET(Vdss=50V, Rds(on)=0.130ohm, Id=3.0A)
50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
50V Single DUAL-Channel HEXFET Power MOSFET in a SO-8 package

File Size 165.28K  /  9 Page

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    IRF7104 IRF7104TR

International Rectifier
Part No. IRF7104 IRF7104TR
OCR Text ... Max. -2.3 -1.8 -10 2.0 0.016 12 -3.0 -55 to + 150 Units A W W/C V V/nS C Thermal Resistance Ratings Parameter RJA Maximum Junction-to-Ambient Min. --- Typ. --- Max. 62.5 Units C/W 8/25/97 IRF7104 Electrical ...
Description -20V Dual P-Channel HEXFET Power MOSFET in a SO-8 package

File Size 155.01K  /  9 Page

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    ST Microelectronics
Part No. TDA2030
OCR Text ...L APPLICATION June 1998 1/12 TDA2030 PIN CONNECTION (top view) +VS OUTPUT -VS INVERTING INPUT NON INVERTING INPUT TEST CIRCU...8W Gv = 30 dB RL = 8 f = 40 to 15,000 Hz 0.2 0.5 % 0.1 10 to 140,000 0.5 5 90 0.5 ...
Description 14W HI-FI AUDIO AMPLIFIER

File Size 545.85K  /  13 Page

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    SGS Thomson Microelectronics
Part No. TDA2030
OCR Text ...L APPLICATION June 1998 1/12 TDA2030 PIN CONNECTION (top view) +V S OUTPUT -VS INVERTING INPUT NON INVERTING INPUT TEST CIRC...8W R L = 8 Gv = 30 dB f = 40 to 15,000 Hz 0.2 0.5 % 0.1 10 to 140,000 0.5 5 90 0.5 ...
Description 14w Audio Hi-Fi Amplifier

File Size 194.75K  /  13 Page

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