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Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
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| Part No. |
2SC5998YC 2SC5998
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| OCR Text |
...G PG Min 110 11 Typ 150 2.0 0.95 11 22 13 28 70 Max 190 1.5 Unit pF pF GHz dB dB dBm % Test Conditions VCE = 3 V, IC = 100 mA V...0641 0.0716 0.0795 0.0874 0.0949 0.1024 0.1100 0.1176 0.1251 0.1322 0.1391 0.1457 0.1527 0.1592 0.16... |
| Description |
Octal LNA/VGA/AAF/ADC and Crosspoint Switch; Package: TQFP w/ 9.5mm exposed pad; No of Pins: 100; Temperature Range: Industrial
Silicon NPN Epitaxial High Frequency Medium Power Amplifier
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| File Size |
92.66K /
11 Page |
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IRF[International Rectifier]
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| Part No. |
HFA100MD60C
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| OCR Text |
... Range
Max.
600 83 40 400 2.0 220 180 71 -55 to +150
Units
V
A
J W C
Thermal - Mechanical Characteristics
Parameter
RJC R...0641 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, 0316 Tel: 65 221 8371 Data a... |
| Description |
HEXFRED Ultrafast, Soft Recovery Diode
HEXFRED⑩ Ultrafast, Soft Recovery Diode
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| File Size |
275.80K /
5 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRFD310
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| OCR Text |
...ltiple combinations on standard 0.1 inch pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation ...0641 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, 0316 Tel: 65 221 8371 Data a... |
| Description |
Power MOSFET(Vdss=400V/ Rds(on)=3.6ohm/ Id=0.35A)
Power MOSFET(Vdss=400V, Rds(on)=3.6ohm, Id=0.35A)
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| File Size |
414.42K /
8 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRFI1310G
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| OCR Text |
...ixing.
VDSS = 100V RDS(on) = 0.04 ID = 22A
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS ...0641 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, 0316 Tel: 65 221 8371 Data a... |
| Description |
Power MOSFET(Vdss=100V/ Rds(on)=0.04ohm/ Id=22A)
Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=22A)
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| File Size |
319.89K /
8 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRH9230
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| OCR Text |
...
(R)
RAD HARD
-200 Volt, 0.8 , RAD HARD HEXFET
International Rectifier's P-Channel RAD HARD technology HEXFETs demonstrate excellen...0641 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8... |
| Description |
TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.8ohm, Id=-6.5A)
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| File Size |
102.18K /
4 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRL2310
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| OCR Text |
...ustry.
VDSS = 100V RDS(on) = 0.040 ID = 40A
Absolute Maximum Ratings
Parameter
ID @ T C = 25C ID @ T C = 100C IDM PD @T C = 25C VGS ...0641 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, 0316 Tel: 65 221 8371 Data a... |
| Description |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 40A I(D) | TO-220AB
HEXFET Power MOSFET
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| File Size |
70.02K /
4 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRL630S
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| OCR Text |
...ation.
VDSS = 200V RDS(on) = 0.40 ID = 9.0A
SMD-220
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = ...0641 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, 0316 Tel: 65 221 8371 Data a... |
| Description |
Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A)
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| File Size |
308.41K /
8 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRL630
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| OCR Text |
...ustry.
VDSS = 200V RDS(on) = 0.40 ID = 9.0A
Absolute Maximum Ratings
Parameter
ID @ T C = 25C ID @ T C = 100C IDM PD @T C = 25C VGS ...0641 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, 0316 Tel: 65 221 8371 Data a... |
| Description |
Power MOSFET(Vdss=200V, RdS(on)=0.40ohm, Id=9.0A)
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| File Size |
282.67K /
8 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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