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  0.0357 Datasheet PDF File

For 0.0357 Found Datasheets File :: 989    Search Time::2.406ms    
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    1SMB5.0AT3 1SMB58AT3 1SMB15AT3 1SMB20AT3

ON Semiconductor
Part No. 1SMB5.0AT3 1SMB58AT3 1SMB15AT3 1SMB20AT3
OCR Text ... peak reverse voltage range ? 5.0 v to 170 v ? standard zener breakdown voltage range ? 6.7 v to 199 v ? peak power ? 600 w @ 1.0 ms ? esd rating of class 3 (>16 kv) per human body model ? maximum clamp voltage @ peak pulse current ? low le...
Description Plastic Surface Mount Zener Overvoltage Transienc Suppressor(峰值功75W,塑料表贴封装,5.0V变位电压,齐纳瞬变电压抑制器)
Plastic Surface Mount Zener Overvoltage Transienc Suppressor(峰值功75W,塑料表贴封装,58V变位电压,齐纳瞬变电压抑制器) 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
Plastic Surface Mount Zener Overvoltage Transienc Suppressor(峰值功175W,塑料表贴封装,15V变位电压,齐纳瞬变电压抑制器) 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
Plastic Surface Mount Zener Overvoltage Transienc Suppressor(峰值功75W,塑料表贴封装,20V变位电压,齐纳瞬变电压抑制器) 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
Plastic Surface Mount Zener Overvoltage Transienc Suppressor(宄板????75W锛????〃璐村?瑁??20V????靛?锛??绾崇????????跺?)

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    1SMC5368 1SMC5385 1SMC5375 1SMC5384 1SMC5351 1SMC5369 1SMC5364 1SMC5366 1SMC5365 1SMC5359 1SMC5356 1SMC5361 1SMC5360 1SM

Transys Electronics Ltd.
Transys Electronics, Ltd.
PanJit International, Inc.
TRSYS
TRANSYS Electronics Limited
Part No. 1SMC5368 1SMC5385 1SMC5375 1SMC5384 1SMC5351 1SMC5369 1SMC5364 1SMC5366 1SMC5365 1SMC5359 1SMC5356 1SMC5361 1SMC5360 1SMC5350 1SMC5372 1SMC5373 1SMC5371 1SMC5370 1SMC5376 1SMC5379 1SMC5367 1SMC5355 1SMC5378 1SMC5358 1SMC5353 1SMC5352
OCR Text 0 watts features l for surface mounted applications in order to optimize board space l low profile package l built - in strain relief l glass passivated jun ction l low inductance l typical i d less than 1 ...
Description 27 V, 5 W, surface mount silicon zener diode
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) 50μA低电流操作,低反向漏,低噪声稳压二极管(250μA工作电流,小反向漏电流,低噪声,齐纳二极管)
PTSA 1.5/21-3.5-Z
Low Current Operation at 250?录A茂录?Low Reverse Leakage,Low Noise Zener Diode(250?录A氓路楼盲陆?莽?碌忙碌?茫??氓掳?氓??氓??忙录?莽?碌忙碌?茫??盲陆?氓?陋氓拢掳茫??茅陆?莽潞鲁盲潞?忙??莽庐隆)
24 V, 5 W, surface mount silicon zener diode
33 V, 5 W, surface mount silicon zener diode

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    Lite-On Technology, Corp.
Part No. 24LCS52IST 24LCS52TSN
OCR Text ... i v e curre n t typ i cal - 1 0 a st a nd b y c u rre n t t y p i c a l a t 5. 5 v - 5 a sta n d b y c u rren t typica l at 3 .0v ? or g a n i z e d a s a s i n g le b l o c k of 2 5 6 b y t e s ( 2 56 x 8 ) ? so f t w a re...
Description Microcontroller Programming Adapters
EPROM Microcontrollers with Real-Time Clock I2C串行EEPROM

File Size 176.45K  /  12 Page

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    Reliability
Part No. 25A48R12 25A48R5SS 25A48R3
OCR Text ...on 1500 vdc size 2" x 2" x 0.4" operating temperature -40 c to +90 c case storage temperature -55c to +125c case temperature coefficient .02% per c ripple/noise 75 mv pk-pk max 20mhz bandwidth output accu...
Description 3.25 Watt DC/DC Converters

File Size 362.60K  /  2 Page

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    FUJI ELECTRIC HOLDINGS CO., LTD.
Part No. 2MBI300N-120
OCR Text ...nt i ces v ge =0v v ce =1200v 3.0 ma gate-emitter leackage current i ges v ce =0v v ge = 20v 45 a gate-emitter threshold voltage v ge(th) v ge =20v i c =300ma 4.5 7.5 v collector-emitter saturation voltage v ce(sat) v ge =15v i c =300a 3...
Description Circular Connector; Body Material:Aluminum Alloy; Series:MS3116; No. of Contacts:41; Connector Shell Size:20; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Socket RoHS Compliant: No

File Size 99.64K  /  4 Page

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    SavantIC
Part No. 2SB645
OCR Text ...kdown voltage i c =-50ma ;i b =0 -200 v v (br)ebo emitter-base breakdown voltage i e =-1ma ;i c =0 -5 v v cesat collector-emitter saturation voltage i c =-10a; i b =-1a -3.0 v i cbo collector cut-off current v cb =-200v; i...
Description SILICON POWER TRANSISTOR

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    2SC430101 2SC4301

Sanken electric
Part No. 2SC430101 2SC4301
OCR Text ...00 max 100 max 800 min 10 to 30 0.5 max 1.2 max 6 typ 105 typ unit m a m a v v v mhz pf conditions v cb =800v v eb =7v i c =10ma v ce =4v, i c =3a i c =3a, i b =0.6a i c =3a, i b =0.6a v ce =12v, i e =?a v cb =10v, f=1mhz 2sc4301 (ta=25?) ...
Description Silicon NPN Transistor
Silicon NPN Triple Diffused Planar Transistor

File Size 24.74K  /  1 Page

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    SavantIC
Part No. 2SC4804
OCR Text ...akdown voltage i c =10ma ;i b =0 600 v v (br)cbo collector-base breakdown voltage i c =1ma ;i e =0 900 v v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 7 v v cesat collector-emitter saturation voltage i c =0.8...
Description SILICON POWER TRANSISTOR

File Size 240.91K  /  3 Page

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