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VISAY[Vishay Siliconix]
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| Part No. |
SUD70N03-04P
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| OCR Text |
0.0043 @ VGS = 10 V 0.0065 @ VGS = 4.5 V
ID (A)a
33 27
D TrenchFETr Power MOSFET D 175_C Junction Temperature D Optimized for Low-Side Synchronous Rectifier Operation D 100% Rg Tested
APPLICATIONS
D
D DC/DC Converters D Synchr... |
| Description |
N-Channel 30-V (D-S) 175C MOSFET
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| File Size |
50.70K /
4 Page |
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Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
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| Part No. |
SUD70N03-06P
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| OCR Text |
...
ID (A)b
70 70
rDS(on) (W)
0.006 @ VGS = 10 V 0.009 @ VGS = 4.5 V
D TrenchFETr Power MOSFET D High Current D 100% Rg Tested
APPLICATIONS
D DC/DC Converters - Optimized For Low Side D Synchronous Rectifiers
D
TO-252
Drain ... |
| Description |
N-Channel 30-V (D-S) 175C MOSFET N沟道30 V的（副）175荤MOSFET
N-Channel 30-V (D-S) 175C MOSFET
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| File Size |
64.13K /
4 Page |
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it Online |
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SIRENZA[SIRENZA MICRODEVICES]
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| Part No. |
SUF-1000
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| OCR Text |
...5V supply and its compact size (0.88 x 0.75 mm2) make it ideal for high-density multi-chip module applications. It is well-suited for wideband instrumentation and directconversion systems.
Gain & Return Loss vs. Frequency (GSG Probe Data)
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| Description |
DC-20 GHz, Cascadable pHEMT MMIC Amplifier
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| File Size |
124.94K /
4 Page |
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SIRENZA[SIRENZA MICRODEVICES]
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| Part No. |
SUF-2000
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| OCR Text |
...nd high IP3 gain block covering 0.05-10 GHz. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active bias network that operates from a single 5V supply. It offers eff... |
| Description |
0.2-10 GHz, Cascadable pHEMT MMIC Amplifier
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| File Size |
148.34K /
4 Page |
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it Online |
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SIRENZA[SIRENZA MICRODEVICES]
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| Part No. |
SUF-3000
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| OCR Text |
...nd high IP3 gain block covering 0.25-16 GHz. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active bias network that operates from a single 5V supply. It offers eff... |
| Description |
0.25-16 GHz, Cascadable pHEMT MMIC Amplifier
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| File Size |
132.14K /
4 Page |
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it Online |
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SIRENZA[SIRENZA MICRODEVICES]
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| Part No. |
SUF-4000
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| OCR Text |
...nd high IP3 gain block covering 0.15-10 GHz. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active bias network that operates from a single 5V supply. It offers eff... |
| Description |
0.15-10 GHz, Cascadable pHEMT MMIC Amplifier
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| File Size |
130.81K /
4 Page |
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it Online |
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SIRENZA[SIRENZA MICRODEVICES]
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| Part No. |
SUF-5000
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| OCR Text |
...nd high IP3 gain block covering 0.1 - 3.7 GHz. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active bias network that operates from a single 5V supply. It offers e... |
| Description |
0.1-3.7 GHz, Cascadable pHEMT MMIC Amplifier
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| File Size |
106.03K /
4 Page |
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it Online |
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GE[General Semiconductor]
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| Part No. |
SUF15J SUF15 SUF15G
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| OCR Text |
...nt - 1.5 Amperes
FEATURES
1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2)
Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Glass passivated chip junction Superfast recovery time fo... |
| Description |
ULTRAFAST EFFICIENT RECTIFIER
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| File Size |
54.18K /
2 Page |
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AUK[AUK corp]
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| Part No. |
SUF520J
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| OCR Text |
...* Low threshold voltage : Vth = 0.5~1.5V. * Two STK1828 Chips in SOT-363 Package.
Ordering Information
Type NO. SUF520J Marking H Package Code SOT-363
Outline Dimensions
unit :
mm
2.1 BSC 1.25 BSC
3
2
1
1 2
0.15... |
| Description |
N-Channel Enhancement-Mode MOSFET
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| File Size |
303.72K /
4 Page |
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AUK[AUK corp]
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| Part No. |
SUF620EF
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| OCR Text |
...
Test Condition
ID=-100A, VGS=0 ID=-0.1mA, VDS=-3V VDS=-20V, VGS=0 VGS=7V, VDS=0 VGS=-2.5V, ID=-10mA VDS=-3V, ID=-10mA VDS=-3V, VGS=0, f=1MHz VDS=-3V, VGS=0, f=1MHz VDS=-3V, VGS=0, f=1MHz VDD=-3V, ID=-10mA VGEN=0~-2.5V VDD=-3V, ID=-10mA V... |
| Description |
P-Channel Enhancement-Mode MOSFET
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| File Size |
312.70K /
4 Page |
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it Online |
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Price and Availability
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