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  0.0037 Datasheet PDF File

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    NEC, Corp.
NEC[NEC]
Part No. 2SA1008 2SA1008-S 2SA1008-Z 2SA10081 2SA10082 2SA10083 2SA10084 2SA1008-AZ
OCR Text ...Conditions Ratings -100 -100 -7.0 -2.0 -4.0 -1.0 15 1.5 150 -55 to +150 Unit V V V A A A W W C C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest ver...
Description SILICON POWER TRANSISTOR 硅功率晶体管
2 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB MP-25, 3 PIN
Silicon transistor

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    Matsshita / Panasonic
Part No. 2SA1127
OCR Text ...50.5 5.10.2 s Features 0.45 -0.1 1.27 +0.2 0.45 -0.1 1.27 +0.2 123 2.30.2 2.540.15 1:Emitter 2:Collector 3:Base JEDEC:TO-92 EIAJ:SC-43A s Electrical Characteristics Parameter Collector cutoff current Colle...
Description Transistor

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    panasonic
Part No. 2SA1127
OCR Text ...rd current transfer ratio hFE. 0.70.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction tem...
Description Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires
TO-92-A1

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    Sanyo
Part No. 2SA1402 2SC3596 2SC3596-F
OCR Text ...:mm 2009B [2SA1402/2SC3596] 8.0 4.0 2.7 * High fT: fT typ=700MHz. * Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=1.8pF (NPN), 2.3pF (PNP). * Complementary pair with the 2SA1402/2SC3596. * Adoptio...
Description Si, NPN, RF POWER TRANSISTOR, TO-126
PNP/NPN Epitaxial Planar Silicon Transistors

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    Sanyo
Part No. 2SA1700
OCR Text ...VCE(sat) VBE(sat) VCB=-300V, IE=0 VEB=-4V, IC=0 VCE=-10V, IC=-50mA VCE=-30V, IC=-10mA IC=-50mA, IB=-5mA -400 -400 -5 5 4 0.25 5 60* 70 -0.8 -1.0 Conditions Ratings min typ max -0.1 -0.1 200* MHz V V V V V pF pF s s Unit A A IC=-50mA, IB=...
Description PNP Epitaxial Planar Silicon Transistor

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    Sanyo
Part No. 2SA1706
OCR Text ...EBO hFE1 hFE2 fT VCB=(-)50V, IE=0 VEB=(-)4V, IC=0 VCE=(-)2V, IC=(-)100mA VCE=(-)2V, IC=(-)1.5A VCE=(-)10V, IC=(-)50mA 100* 40 150 MHz Conditions Ratings min typ max (-)100 (-)100 400* Unit nA nA * : The 2SA1706/2SC4486 are classified by ...
Description PNP Epitaxial Planar Silicon Transistors High-Current Switching Applications
PNP/NPN Epitaxial Planar Silicon Transistors

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    Matsshita / Panasonic
Part No. 2SA1738
OCR Text 0.3 0.650.15 +0.2 +0.25 1.5 -0.05 0.650.15 2 1.1 -0.1 +0.2 (Ta=25C) Ratings -15 -15 -4 -100 -50 200 150 -55 ~ +150 Unit V V V mA mA mW C C Parameter Collector to base voltage Collector to emitter voltage Emitter to ...
Description Transistor

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    panasonic
Part No. 2SA1738
OCR Text 0.40+0.10 n0.05 0.16+0.10 -0.06 s Features q q q 3 1.50+0.25 -0.05 2.8+0.2 -0.3 High-speed switch (pair with 2SC3757) Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipmen...
Description Mini3-G1

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    Matsshita / Panasonic
Part No. 2SA1790
OCR Text ... Unit: mm s Features q q 0.4 0.80.1 0.4 0.2-0.05 0.15-0.05 +0.1 High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine pac...
Description Transistor

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    panasonic
Part No. 2SA1790
OCR Text 0.2+0.1 -0.05 Unit: mm 0.15+0.1 -0.05 q 0.80.1 1.60.15 q High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. ...
Description SSMini3-G1

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